SI4542DY [ONSEMI]
30V，互补，PowerTrench® MOSFET;
| 型号： | SI4542DY |
| 厂家： | 
ONSEMI |
| 描述： | 30V，互补，PowerTrench® MOSFET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
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Si4542DY
30V Complementary PowerTrench MOSFET
Features
General Description
•
Q1: N-Channel
This complementary MOSFET device is produced using
6 A, 30 V
RDS(on) = 28 mΩ @ VGS = 10V
ON
process that has been especially tailored to
minimize the on-state resistance and yet
Semiconductor’s
advanced
PowerTrench
RDS(on) = 35 mΩ @ VGS = 4.5V
maintain low gate charge for superior switching
performance.
•
Q2: P-Channel
–6 A, –30 V
RDS(on) = 32 mΩ @ VGS = –10V
Applications
RDS(on) = 45 mΩ @ VGS = –4.5V
• DC/DC converter
• Power management
Q2
D2
5
6
7
8
4
3
2
1
D2
D1
D1
Q1
G2
SO-8
S2
G1
S1
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
VDSS
VGSS
ID
Drain-Source Voltage
30
±20
6
–30
±20
–6
V
V
A
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
20
–20
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
(Note 1b)
1.6
1.2
1
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
4542
Si4542DY
13”
12mm
2001 Semiconductor Components Industries, LLC.
Publication Order Number:
October-2017, Rev 1
Si4542DY/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
GS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
Q1
Q2
Q1
Q2
30
–30
V
Voltage
V
Breakdown Voltage
Temperature Coefficient
23
–21
∆BVDSS
∆TJ
mV/°C
IDSS
Zero Gate Voltage Drain
Current
Q1
Q2
1
–1
µA
V
DS = –24 V, VGS = 0 V
IGSS
Gate-Body Leakage
VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V
Q1
Q2
+100
+100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
Q1
Q2
Q1
Q2
1
–1
1.5
–1.7
–4
3
–3
V
V
DS = VGS, ID = –250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 6 A
mV/°C
mΩ
4
RDS(on)
Static Drain-Source
On-Resistance
Q1
19
32
25
28
48
35
VGS = 10 V, ID = 6 A, TJ = 125°C
V
GS = 4.5 V, ID = 5 A
Q2
VGS = –10 V, ID = –6 A
VGS = –10 V, ID = –6 A, TJ = 125°C
21
29
30
32
51
45
V
GS = –4.5 V, ID = –5 A
VGS = 10 V, VDS = 5 V
GS = –10 V, VDS = –5 V
Forward Transconductance VDS = 15 V, ID = 6 A
DS = –10 V, ID = –6 A
ID(on)
gFS
On-State Drain Current
Q1
Q2
Q1
Q2
20
–20
A
S
V
18
16
V
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Q1
Q1
Q2
Q1
Q2
Q1
Q2
830
1540
185
400
80
pF
pF
pF
V
DS = 15 V, VGS = 0 V,
f = 1.0 MHz
Q2
Output Capacitance
V
DS = –15 V, VGS = 0 V,
Reverse Transfer
Capacitance
f = 1.0 MHz
170
Electrical Characteristics (continued)
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6
13
10
22
18
47
5
18
9
15
2.8
4
3.1
5
12
24
18
35
29
75
12
30
13
20
ns
ns
VDS = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2
ns
VDS = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
ns
Qg
Qgs
Qgd
Q1
V
nC
nC
nC
DS = 15 V, ID = 7.5 A, VGS = 5 V
Q2
VDS = –10 V, ID = –6 A, VGS = –5V
www.onsemi.com
2
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
1.3
–1.3
1.2
A
V
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2)
0.7
–0.7
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
www.onsemi.com
3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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