SI4963DY [FAIRCHILD]
Dual P-Channel 2.5V Specified PowerTrench MOSFET; 双P沟道2.5V指定的PowerTrench MOSFET型号: | SI4963DY |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
文件: | 总3页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
January 2001
Si4963DY
Dual P-Channel 2.5V Specified PowerTrenchÒ MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
· –6.2 A, –20 V, RDS(ON) = 33 mW @ VGS = –4.5 V
RDS(ON) = 50 mW @ VGS = –2.5 V
management applications with a wide range of gate
drive voltage (2.5V – 12V).
· Extended VGSS range (±12V) for battery applications
· Low gate charge
Applications
·
·
·
·
Load switch
· High performance trench technology for extremely
low RDS(ON)
Motor drive
DC/DC conversion
Power management
· High power and current handling capability
D1
5
6
7
8
4
3
2
1
D1
D2
Q1
Q2
D2
G1
SO-8
S1
G2
S2
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–20
±12
–6.2
–40
VGSS
ID
Gate-Source Voltage
V
A
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
W
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
RqJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
4963
Si4963DY
13’’
12mm
2500 units
Ó2001 Fairchild Semiconductor International
Si4963DY Rev A(W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
VGS = 0 V, ID = –250 mA
–20
V
BVDSS
Drain–Source Breakdown Voltage
DBVDSS
DT
J
Breakdown Voltage Temperature
Coefficient
ID = –250 mA, Referenced to 25°C
–16
mV/°C
VDS = –16 V, VGS = 0 V
VGS = –12 V, VDS = 0 V
–1
mA
nA
nA
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
–100
100
IGSSF
IGSSR
VGS = 12 V,
VDS = 0 V
On Characteristics
(Note 2)
–0.6
–15
–1.0
3
–1.5
V
VDS = VGS , ID = –250 mA
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
DVGS(th)
DT
J
ID = –250 mA, Referenced to 25°C
mV/°C
VGS = –4.5 V, ID = –6.2 A
VGS = –2.5 V, ID = –5 A
VGS = –4.5 V, ID = –6.2A,
TJ=125°C
23
34
45
33
50
56
mW
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
VDS = –5 V
A
S
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VDS = –5 V,
ID = –6.2 A
19
Dynamic Characteristics
C
Input Capacitance
1456
300
pF
pF
pF
iss
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
150
Switching Characteristics (Note 2)
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
15
11
57
37
14
3
27
20
91
59
20
ns
ns
RGEN = 6 W
ns
ns
VDS = –10 V,
VGS = –4.5 V
ID = –6.2 A,
Qg
nC
nC
nC
Qgs
Qgd
5
Drain–Source Diode Characteristics and Maximum Ratings
–1.3
-1.2
IS
Maximum Continuous Drain–Source Diode Forward Current
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–0.7
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. qJC is guaranteed by design while Rq CAis determined by the user's board design.
R
a)
78°C/W when
mounted on a
0.5in pad of 2
b)
125°C/W when
mounted on a
0.02 in pad of
c)
135°C/W when
mounted on a
minimum pad.
2
2
oz copper
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
Si4963DY Rev A(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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