SI9435DY [FAIRCHILD]

Si9435DY

January 2001

Si9435DY

P-Channel Logic Level PowerTrench



MOSFET

General Description

This P-Channel Logic Level MOSFET is produced

using

Fairchild

Semiconductor's

advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

•

–5.3 A, –30 V. R

DS(ON)

= 50 mΩ @ V

GS

= –10 V

R

DS(ON)

= 80 mΩ @ V

GS

= –4.5 V

•

Low gate charge

•

Fast switching speed

•

High performance trench technology for extremely

low R

DS(ON)

•

High power and current handling capability

Applications

•

DC/DC converter

•

Load switch

•

Motor Drive

D

D

D

D

5

6

4

3

2

1

SO-8

S

S

S

G

7

8

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

P

D

Drain-Source Voltage

Gate-Source Voltage

Drain Current

– Continuous

– Pulsed

T

A

=25 C unless otherwise noted

o

Parameter

Ratings

–30

±20

(Note 1a)

Units

V

V

A

W

-5.3

-20

2.5

1.2

1.0

-55 to +150

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

T

J

, T

STG

Operating and Storage Junction Temperature Range

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

50

25

°C/W

°C/W

Package Marking and Ordering Information

Device Marking

9435

Device

Si9435DY

Reel Size

13’’

Tape width

12mm

Quantity

2500 units

2001

Fairchild Semiconductor International

Si9435DY Rev A(W)

Si9435DY

Electrical Characteristics

Symbol

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSSF

I

GSSR

T

A

= 25°C unless otherwise noted

Parameter

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

(Note 2)

Test Conditions

V

GS

= 0 V, I

D

= –250

µA

I

D

= –250

µA,

Referenced to 25°C

V

DS

= –24 V,

V

GS

= 20 V,

V

GS

= –20 V,

V

GS

= 0 V

V

DS

= 0 V

V

DS

= 0 V

Min

–30

Typ

Max Units

V

Off Characteristics

–22

–1

100

–100

mV/°C

µA

nA

nA

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

R

DS(on)

Gate Threshold Voltage

Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source

On–Resistance

On–State Drain Current

Forward Transconductance

V

DS

= V

GS

, I

D

= –250

µA

I

D

= –250

µA,

Referenced to 25°C

V

GS

= –10 V,

I

D

= –5.3 A

V

GS

= –10 V, I

D

= –5.3 A, T

J

=125°C

V

GS

= –4.5 V, I

D

= –4.2A,

V

GS

= –10 V,

V

DS

= –15 V,

V

DS

= –5 V

I

D

= –5.3 A

–1

–1.7

4

38

54

55

–3

V

mV/°C

50

79

80

mΩ

I

D(on)

g

FS

–20

12

A

S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(Note 2)

V

DS

= –15 V,

f = 1.0 MHz

V

GS

= 0 V,

690

306

77

pF

pF

pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V

DD

= –15 V,

V

GS

= –10 V,

I

D

= –1 A,

R

GEN

= 6

Ω

7

10

19

11

14

18

34

20

23

ns

ns

ns

ns

nC

nC

nC

V

DS

= –15 V,

V

GS

= –10 V

I

D

= –5.3 A,

14

2.4

4.8

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Maximum Continuous Drain–Source Diode Forward Current

Drain–Source Diode Forward

V

GS

= 0 V, I

S

= –5.3 A

Voltage

–5.3

(Note 2)

A

V

–0.86

–1.2

Notes:

1.

R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

a) 50°C/W when

2

mounted on a 1in

pad of 2 oz copper

b) 105°C/W when

2

mounted on a .04 in

pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2.

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Si9435DY Rev A(W)

Si9435DY

Typical Characteristics

30

V

GS

= -10.0V

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

2.5

V

GS

= -3.5V

2

-4.0V

1.5

-4.5V

-5.5V

-7.0V

1

-10.0V

25

20

15

10

5

0

0

-7.5V

-6.5V

-6.0V

-5.0V

-4.0V

-3.0V

1

2

3

4

5

0.5

0

5

10

15

-I

D

, DRAIN CURRENT (A)

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

1.6

I

D

= -5.3A

V

GS

= -10V

I

D

= -5.3A

1.4

0.15

1.2

0.1

1.0

0.05

0.8

T

A

= 125 C

T

A

= 25 C

o

o

0.6

-50

-25

0

25

50

75

100

o

0

125

150

2

4

6

8

10

T

J

, JUNCTION TEMPERATURE ( C)

-V

GS

, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

20

V

DS

= -10V

16

T

A

= -55 C

125 C

o

o

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

25 C

10

o

V

GS

= 0V

12

1

T

A

= 125 C

25 C

o

o

8

0.1

-55 C

o

4

0.01

0

1

2

3

4

5

0.001

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-V

GS

, GATE TO SOURCE VOLTAGE (V)

-V

SD

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Si9435DY Rev A(W)

Si9435DY

Typical Characteristics

10

I

D

= -5.3A

V

DS

= -5V

8

-15V

6

-10V

1000

f = 1 MHz

V

GS

= 0 V

800

C

ISS

600

C

OSS

4

400

2

200

C

RSS

0

0

5

10

15

0

0

5

10

15

20

25

30

Q

g

, GATE CHARGE (nC)

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

100

R

DS(ON)

LIMIT

10

100

µ

s

1ms

10ms

100ms

1s

1

V

GS

= -10V

SINGLE PULSE

R

θ

JA

= 125 C/W

T

A

= 25 C

0.01

0.1

1

10

100

0

o

o

Figure 8. Capacitance Characteristics.

50

SINGLE PULSE

R

θ

JA

= 125°C/W

T

A

= 25°C

40

30

10s

DC

20

0.1

10

0.001

0.01

0.1

1

10

100

-V

DS

, DRAIN-SOURCE VOLTAGE (V)

t

1

, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

R

θ

JA

(t) = r(t) + R

θ

JA

0.1

0.05

0.02

0.01

SINGLE PULSE

0.1

R

θ

JA

= 125 C/W

P(pk)

t

1

t

2

T

J

- T

A

= P * R

θ

JA

(t)

Duty Cycle, D = t

1

/ t

2

o

0.01

0.001

0.0001

0.001

0.01

0.1

t

1

, TIME (sec)

1

10

100

1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

Si9435DY Rev A(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

E

2

CMOS

TM

EnSigna

TM

FACT™

FACT Quiet Series™

FAST



DISCLAIMER

FASTr™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

PowerTrench



QFET™

QS™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER



SMART START™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

VCX™

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

2. A critical component is any component of a life

support device or system whose failure to perform can

systems which, (a) are intended for surgical implant into

be reasonably expected to cause the failure of the life

the body, or (b) support or sustain life, or (c) whose

support device or system, or to affect its safety or

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

effectiveness.

reasonably expected to result in significant injury to the

user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Advance Information

Product Status

Formative or

In Design

Definition

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. G