SS8050DJ18Z [FAIRCHILD]
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| 型号： | SS8050DJ18Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 暂无描述 |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS8050
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
TO-92
B PUSH-PULL OPERATION.
· Complimentary to SS8550
· Collector Current: IC=1.5A
· Collector Dissipation: PC=2W (TC=25°C)
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
40
25
6
1.5
V
V
V
VCEO
VEBO
IC
A
Collector Dissipation
Junction Temperature
Storage Temperature
PC
TJ
TSTG
1
150
-65 ~ 150
W
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Min
40
25
6
Typ
Max
Unit
IC=100mA, IE=0
IC=2mA, IB=0
IE=100mA, IC=0
VCB=35V, IE=0
VEB=6V, IC=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO
BVCEO
BVEBO
ICBO
V
V
V
nA
nA
100
100
Emitter Cut-off Current
IEBO
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCB=10V, IE=0
hFE1
hFE2
DC Current Gain
135
160
110
0.28
0.98
0.66
9.0
45
85
40
300
hFE3
0.5
1.2
1
V
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
VCE (sat)
VBE (sat)
VBE
Output Capacitance
COB
pF
f=1MHz
VCE=10V, IC=50mA
100
MHz
Current Gain-Bandwidth Product
190
fT
hFE(2) CLASSIFICATION
Classification
B
C
D
hFE(2)
85-160
120-200
160-300
Rev. B
ã 1999 Fairchild Semiconductor Corporation
SS8050
NPN EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
相关型号：
SS8050DTA
NPN Epitaxial Silicon Transistor, 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM, 2000/AMMO
FAIRCHILD
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