首页 |元器件品牌

TN4033A_NL [FAIRCHILD]

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-226,;
TN4033A_NL
型号： TN4033A_NL
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-226,

晶体 放大器 晶体管
文件： 总4页 (文件大小：100K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Discrete POWER & Signal  
Technologies  
TN4033A  
TO-226  
C
B
E
PNP General Purpose Amplifier  
This device is designed for general purpose amplifier and switching  
applications at currents to 500 mA and collector voltages up to 70V.  
Sourced from Process 67.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
80  
80  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.0  
A
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TN4033A  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
1.0  
8.0  
125  
W
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
50  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  
PNP General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Sustaining Voltage*  
IC = 10 mA, IB = 0  
IC = 10 µA, IE = 0  
IE = 10 µA, IC = 0  
80  
80  
V
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Cutoff Current  
5.0  
VCB = 60 V, IE = 0  
VCB = 60 V, IE = 0, TA = 150°C  
VEB = 5.0 V, IC = 0  
50  
50  
10  
nA  
µA  
µA  
IEBO  
Emitter-Cutoff Current  
ON CHARACTERISTICS  
hFE  
DC Current Gain  
75  
40  
100  
70  
IC = 100 µA, VCE = 5.0 V  
IC=100mA, VCE=5.0V,TA = -55°C  
IC = 100 mA, VCE = 5.0 V  
IC = 500 mA, VCE = 5.0 V  
IC = 1.0 A, VCE = 5.0 V  
300  
25  
Collector-Emitter Saturation Voltage  
IC = 150 mA, IB = 15 mA  
IC = 500 mA, IB = 50 mA  
IC = 150 mA, IB = 15 mA  
0.15  
0.5  
0.9  
V
V
V
VCE(sat)  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
VBE(sat)  
VBE(on)  
IC = 500 mA, VCE = 0.5 V  
1.1  
V
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = 10 V, IE = 0, f = 1.0 MHz  
VEB = 0.5 V, IC = 0, f = 1.0 MHz  
20  
110  
4.0  
pF  
pF  
Cobo  
Cibo  
hfe  
Input Capacitance  
Small-Signal Current Gain  
IC = 50 mA, VCE = 10 V,  
f = 100 MHz  
1.0  
SWITCHING CHARACTERISTICS  
Storage Time  
Turn-On Time  
Fall Time  
IC = 500 mA, IB1 = IB2 = 50 mA  
IC = 500 mA, IB1 = 50 mA  
350  
100  
50  
ns  
ns  
ns  
ts  
ton  
tf  
IC = 500 mA, IB1 = IB2 = 50 mA  
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%  
PNP General Purpose Amplifier  
(continued)  
Typical Characteristics  
Typical Pulsed Current Gain  
Collector-Emitter Saturation  
Voltage vs Collector Current  
vs Collector Current  
300  
β
= 10  
V CE = 5V  
0.6  
0.4  
0.2  
250  
200  
150  
100  
50  
125 °C  
25 °C  
25 °C  
125 °C  
- 40 °C  
- 40 ºC  
0
0.1  
0.3  
1
3
10  
30  
100 300 1000  
10  
100  
I C - COLLECTOR CURRENT (mA)  
1000  
IC - COLLECTOR CURRENT (mA)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Base-Emitter ON Voltage vs  
Collector Current  
1
0.8  
0.6  
0.4  
0.2  
1.2  
β
= 10  
VCE = 5V  
1
0.8  
0.6  
0.4  
- 40 ºC  
- 40 ºC  
25 °C  
125 °C  
25 °C  
125 °C  
0.1  
1
10  
50  
10  
100  
1000  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Collector-Cutoff Current  
vs Ambient Temperature  
Collector-Base and Emitter-Base  
Capacitance vs Reverse Bias Voltage  
100  
10  
1
500  
f = 1.0 MHz  
V
= 50V  
CB  
200  
100  
50  
20  
C
ibo  
0.1  
C
obo  
10  
6
25  
50  
75  
100  
125  
º
150  
0.1  
1
10  
50  
TA - AMBIENT TEMPERATURE ( C)  
REVERSE BIAS VOLTAGE (V)  
PNP General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Switching Times vs  
Collector Current  
Turn On and Turn Off Times vs  
Collector Current  
500  
400  
300  
200  
100  
0
240  
VCE = -10V  
t
off  
200  
160  
I
= I  
= I  
B2 C  
B1  
V
= - 30V 10  
CC  
VCE = -1.0V  
120  
80  
40  
0
t
on  
1
2
20  
100  
200  
10  
100  
500  
1000  
I
- COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
C
Power Dissipation vs  
Ambient Temperature  
1
0.75  
0.5  
TO-226  
0.25  
0
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (o C)  

相关型号：

TN4035-600G

 40A SCRs
STMICROELECTR

TN4035-600G-TR

 40A SCRs
STMICROELECTR

TN4036

 TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 1A I(C) | TO-237VAR
ETC

TN4036/D10Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D27Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D28Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D29Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D74Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D89Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4037

 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR
ETC

TN4050-400G

 40A, 200V, SCR
STMICROELECTR

TN4050-600G

 40A, 400V, SCR
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明