BT151 [FCI]
12 Amp Silicon Controlled rectifiers all conduction angles; 12安培可控硅整流器的所有的导通角
| 型号： | BT151 |
| 厂家： | 
FIRST COMPONENTS INTERNATIONAL |
| 描述： | 12 Amp Silicon Controlled rectifiers all conduction angles |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Description
Mechanical Dimensions
A
C
Marking
G
F
***
F
***
BT151
BT151
- 500
- 650
***=Date Code
TO-220AB
For use in Applications Requiring high Bidirectional Blocking Voltage Capability and high
Thermal Cycling Performance. Typical Applications include Motor Control, Industrial and
Domestic Lighting, Heating and Static Switching
ABSOLUTE MAXIMUM RATINGS
VALUE
650
*650
PARAMETER
SYMBOL
TEST CONDITION
BT151-
UNIT
500
VDRM, VRRM
IT (AV)
IT (RMS)
ITSM
Repetitive Peak Off State Voltage
Average On State Current
*500
V
A
A
half sine wave, Tmb < 109ºC
all conduction angles
7.5
12
RMS On State Current
half sine wave, TJ=25ºC
prior to surge
Non Repetitive Peak On State Current
100
110
50
t=10ms
A
A
t=8.3ms
l2t for Fusing
I2t
A2s
t=10ms
ITM=20A, IG=50mA,
dlG/dt=50mA/ms
Repetitive Rate of Rise of On State
Current After Triggering
dlT/dt
50
A/ms
IGM
VGM
2.0
5.0
5.0
5.0
0.5
Peak Gate Current
A
V
Peak Gate Voltage
VRGM
PGM
Peak Reverse Gate Voltage
Peak Gate Power
V
W
W
ºC
PG (AV)
Tstg
Average Gate Power
Storage Temperature
Over any 20ms period
- 40 to +150
125
Tj
Operating Junction Temperature
ºC
THERMAL RESISTANCE
Junction to Mounting Base
Junction to Ambient
Rth (j-mb)
Rth (j-a)
1.3 max
60 typ
K/W
K/W
in free air
*Although not recommended, off state voltage upto 800V may be applied without damage, but the
thyristor may switch to the on state. The rate of rise of current should not exceed 15A/ms
ELECTRICAL CHARACTERISTICS (TJ=25ºC unless specified otherwise)
PARAMETER
SYMBOL
TEST CONDITION
VD=12V, IT=0.1A
VD=12V, IGT=0.1A
VD=12V, IGT=0.1A
MIN
MAX
15
UNIT
mA
mA
mA
V
IGT
IL
Gate Trigger Current
Latching Current
Holding Current
On State Voltage
Gate Trigger Voltage
40
IH
20
VT
IT=23A
1.75
1.5
VGT
VD=12V, IT=0.1A
VD=VDRM (max),
IT=0.1A,TJ=125ºC
V
0.25
V
VD= VDRM (max),
VR=VRRM(max) TJ=125ºC
ID, IR
Off State Leakage Current
0.5
mA
DYNAMIC CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP MAX
UNIT
VDM=67% VDRM=(max),
TJ=125ºC, exponential
waveform
dVD/dt
Critical Rate of Rise of Off State Voltage
gate open circuit
50
V/ms
V/ms
RGK =100W
200
ITM=40A, VD=VDRM (max),
tgt
Gate Controlled Turn On time
2.0
70
ms
IG=0.1A, dlG/dt=5A/ms
VD=67% VDRM(max),
TJ=125ºC, ITM=20A, VR=25V,
dlTM/dt=30A/ms,
tq
Circuit Commutated Turn Off time
ms
dVD/dt=50V/ms, RGK=100W
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