KBU808 [FCI]

8.0 Amp SINGLE PHASE SILICON BRIDGE; 8.0安培单相硅桥
KBU808
型号: KBU808
厂家: FIRST COMPONENTS INTERNATIONAL    FIRST COMPONENTS INTERNATIONAL
描述:

8.0 Amp SINGLE PHASE SILICON BRIDGE
8.0安培单相硅桥

二极管
文件: 总2页 (文件大小:174K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
8.0 Amp  
SINGLE PHASE SILICON BRIDGE  
Mechanical Dimensions  
Description  
M-  
Features  
n COMPACT SIZE  
n
300 AMP SURGE OVERLOAD RATING  
n LOW LEAKAGE CURRENT  
n MEETS UL SPECIFICATION 94V-0  
Electrical Characteristics @ 25oC.  
KBU800 . . . 810 Series  
Units  
KBU800 KBU801 KBU802 KBU804 KBU806 KBU808 KBU810  
Maximum Ratings  
Peak Repetitive Reverse Voltage...VRRM  
RMS Reverse Voltage...VR(rms)  
DC Blocking Voltage...VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
100  
1000  
............................................. 8.0 ............................................... Amps  
Average Forward Rectified Current...IF(av)  
TA = 25°C  
............................................. 300 ...............................................  
Non-Repetitive Peak Forward Surge Current...IFSM  
8.3 mS Single ½ Sine Wave Imposed on Rated Load  
Amps  
............................................. 167 ...............................................  
............................................. 1.0 ...............................................  
Rating for Fusing (T < 8.3mS)  
A2S  
Forward Voltage...V  
Per Leg @ 8.0 AFmps  
Volts  
DC Reverse Current...IR  
@ Rated DC Blocking Voltage  
............................................. 10 ...............................................  
............................................. 1.0 ...............................................  
T = 25°C  
TAA = 125°C  
µAmps  
mAmps  
............................................. 6.0 ...............................................  
............................................. 8.0 ...............................................  
Typical Thermal Resistance...RθJC (Alum Heat Sink)  
Thermal Resistance...RθJA (Free Air)  
°C / W  
°C / W  
pF  
Typical Junction Capacitance...CJ  
< .................... 210 ................ > < ............ 90 ............. >  
......................................... -55 to 150 ..........................................  
Operating & Storage Temperature Range...TJ, TSTRG  
°C  
Page 3-23  
Data Sheet  
8.0 Amp  
SINGLE PHASE SILICON BRIDGE  
Forward Current Derating Curve  
Non-Repetitive  
Peak Forward Surge Current  
300  
200  
100  
1
10  
100  
Number of Cycles @ 60 HZ  
Lead Temperature (°C)  
Typical Reverse Characteristics  
Typical Instantaneous Forward Characteristics  
100  
10  
TJ = 25°C  
1
0
.7 .9  
1.1  
1.5  
1.3  
Volts  
Percent of Rated Peak Voltage  
Typical Junction Capacitance  
Electrical Description  
Ratings at  
25 Deg. C ambient  
temperature  
unless otherwise  
specified.  
Single Phase Half  
Wave, 60 HZ  
Resistive or  
Inductive Load.  
For Capacitive  
Load, Derate  
Current by 20%.  
Reverse Voltage (Volts)  
Page 3-24  

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