TN20-10-6.4 [FERROXCUBE]

Gapped ferrite toroids; 气隙的铁氧体磁环
TN20-10-6.4
元器件型号: TN20-10-6.4
生产厂家: FERROXCUBE INTERNATIONAL HOLDING B.V.    FERROXCUBE INTERNATIONAL HOLDING B.V.
描述和应用:

Gapped ferrite toroids
气隙的铁氧体磁环

PDF文件: 总3页 (文件大小:40K)
下载文档:  下载PDF数据表文档文件
型号参数:TN20-10-6.4参数

TN20-10-7

Ferrite toroids

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9 FERROXCUBE

TN2010L

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 180MA I(D) | TO-226AA

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25 ETC

TN2010L-1

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

TN2010L-1-18

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

TN2010L18

180mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA

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0 VISHAY

TN2010L-18

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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-
0 VISHAY

TN2010L18-1

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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-
0 VISHAY

TN2010L18-2

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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-
0 VISHAY

TN2010L-1TA

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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-
0 VISHAY

TN2010L-1TR1

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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-
0 VISHAY

TN2010L-2

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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-
0 VISHAY

TN2010L-2TA

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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-
0 VISHAY

TN2010L-2TR1

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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-
0 VISHAY

TN2010LTA

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

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0 VISHAY

TN2010T

N-Channel Enhancement-Mode MOSFET Transistor

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15 ETC