FMA219 [FILTRONIC]

X-BAND LNA MMIC; X波段MMIC低噪声放大器


型号：	FMA219
厂家：	FILTRONIC COMPOUND SEMICONDUCTORS
描述：	X-BAND LNA MMIC X波段MMIC低噪声放大器放大器
文件：	总5页 (文件大小：329K)
中文：	中文翻译
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FMA219

PRELIMINARY

X-BAND LNA MMIC

• PERFORMANCE

♦ 7.0 – 11.0 GHz Operating Bandwidth

♦ 1.5 dB Noise Figure

♦ 21 dB Small-Signal Gain

♦ 12 dBm Output Power

♦ +3V Single Bias Supply

♦ DC De-coupled Input and Output Ports

• DESCRIPTION AND APPLICATIONS

The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use

over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a single +3V supply and one off-chip

component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding

of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is

required.

Typical applications include low-noise front end amplifiers, and general gain block utilizations in X-

band. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally

stable if the input port is open-circuited.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Operating Frequency Bandwidth

Small Signal Gain

Symbol

S₂₁

Test Conditions

V_DD= +3 V I_DD= I_OP

No RF input

Min

Typ

Max Units

GHz

Operating Current

I_OP

Small Signal Gain Flatness

Noise Figure

V_DD= +3 V I_DD= I_OP

∆S₂₁

IMD

±0.5

1.5

±0.8

1.7

V_DD= +3 V, I_DD= I_OP

P_OUT= +1.5 dBm SCL

V_DD= +3 V

V_DD= +3 V I_DD= I_OP

3^rd-Order Intermodulation Distortion

-47

12.5

-7

-16

-40

dBc

dBm

Power at 1dB Compression

Input Return Loss

P_1dB

S₁₁

S₂₂

S₁₂

11.5

-3

-10

-30

Output Return Loss

Reverse Isolation

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 11/22/04

Email: sales@filcsi.com

FMA219

PRELIMINARY

X-BAND LNA MMIC

• ABSOLUTE MAXIMUM RATINGS

Parameter

Supply Voltage

Supply Current

Symbol

V_DD

I_DD

Test Conditions

For any operating current

For V_DD< 5V

For standard bias conditions

Non-Operating Storage

See De-Rating Note below

Under any bias conditions

2 or more Max. Limits

Min

Max

100

-5

150

600

Units

dBm

ºC

RF Input Power

P_IN

Storage Temperature

Total Power Dissipation

Gain Compression

T_STG

P_TOT

Comp.

-40

Simultaneous Combination of Limits²

¹T_Ambient= 22°C unless otherwise noted

²Users should avoid exceeding 80% of 2 or more Limits simultaneously

Notes:

•

Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.

Total Power Dissipation defined as: P_TOT≡ (P_DC+ P_IN) – P_OUT, where:

_DC: DC Bias Power

P_IN: RF Input Power

P_OUT: RF Output Power

Total Power Dissipation to be de-rated as follows above 22°C:

P_TOT= 0.6 - (0.004W/°C) x T_CARRIER

•

where T_CARRIER= carrier or heatsink temperature above 22°C

(coefficient of de-rating formula is the Thermal Conductivity)

Example: For a 55°C carrier temperature: P_TOT= 0.6 - (0.004 x (55 – 22)) = 0.47W

•

For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with

some degradation in thermal de-rating performance (P_TOT= 550mW)

Note on Thermal Resistivity: The nominal value of 250°C/W is stated for the input stage, which will reach

temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 175°C/W.

•

• HANDLING PRECAUTIONS

To avoid damage to the devices care should be exercised during handling. Proper Electrostatic

Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and

testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.

Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.

• APPLICATIONS NOTES & DESIGN DATA

Applications Notes are available from your local Filtronic Sales Representative or directly from the

factory.

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 11/22/04

Email: sales@filcsi.com

FMA219

PRELIMINARY

X-BAND LNA MMIC

• ASSEMBLY DRAWING

Input and output thin film

substrates with 50Ω microstrip

transmission lines. Substrate

thickness 250µm or thinner is

recommended.

75µm nominal gap on

each side

150pF

capacitor

25µm dia. Au wire (x2) on

input and output ports, less

than 1000µm length each

250µm Au ribbon

recommended

To +V_DD

Notes:

•

Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The

bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is

recommended. Ultrasonic or thermosonic bonding is not recommended.

•

The recommended die attach is conductive epoxy, following the manufacturer’s recommended curing procedure.

For eutectic die attach the maximum time at 280-300°C is 60 seconds, and should be kept to a minium.

The supply de-coupling capacitor (150 pF recommended value) should be placed as close to the MMIC as practical.

All information and specifications subject to change without notice.

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 11/22/04

Email: sales@filcsi.com

FMA219

PRELIMINARY

X-BAND LNA MMIC

• TYPICAL RF PERFORMANCE (V_DD= +3V, I_DD= I_OP)

FMA219 FREQUENCY RESPONSE

S₂₁

S₁₁

S₂₂

-4

-8

-12

-16

-20

Frequency [GHz]

• TYPICAL NOISE FIGURE PERFORMANCE

FMA219BF NOISE FIGURE

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Frequency (GHz)

¾ Multiple traces show typical die variation across a 150mm (6 in.) wafer.

Note: Effect of typical bondwire inductance (25 µm dia., 1000 µm length, 2 ea. on input and output

ports) is less than 0.5 dB decrease in S₂₁(11GHz), and no measurable effect on noise figure.

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 11/22/04

Email: sales@filcsi.com

FMA219

PRELIMINARY

X-BAND LNA MMIC

• POWER TRANSFER CHARACTERISTIC

FMA219BF POWER TRANSFER CHARACTERISTIC

16.0

14.0

12.0

10.0

8.0

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

Pout@7GHz

Pout@9GHz

Pout@11GHz

Comp@7GHz

Comp@9GHz

Comp@11GHz

6.0

4.0

2.0

0.0

-23.0

-21.0

-19.0

-17.0

-15.0

-13.0

-11.0

-9.0

-7.0

-5.0

-3.0

Pin (dBm)

• TYPICAL 3 -ORDER INTERMODULATION PERFORMANCE

FMA219

IM PRODUCTS vs. INPUT POWER AT 9.0 GHz

-15.00

-20.00

11.0

9.0

7.0

5.0

3.0

1.0

Pout

Im3, dBc

-25.00

-30.00

)

-35.00

-40.00

-45.00

-19.0

-17.0

-15.0

-13.0

-11.0

-9.0

-7.0

Input Power (dBm)

¾ Equivalent output IP3 performance exceeds 24 dBm, input IP3 is typically ≥ +2 dBm.

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 11/22/04

Email: sales@filcsi.com

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