FFM102AFG [FIRST]
Chip Silicon Rectifier;
| 型号： | FFM102AFG |
| 厂家： | 
FIRST SEMI |
| 描述： | Chip Silicon Rectifier |
| 文件： | 总3页 (文件大小：4119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FFM101AFG THRU FFM107AFG
Chip Silicon Rectifier
SMAF
1
1.0A Surface Mount Fast
Recovery Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
MAX.
Symbol
IO
UNIT
A
MIN.
TYP.
1.0
30
e-wave superimposed on
C methode)
IFSM
A
RM TJ = 25OC
5.0
50
IR
μA
R = VRRM TJ = 100OC
Junction to ambient
Rθ
80
15
OC/W
pF
JA
CJ
ce
ure
f=1MHz and applied 4V DC reverse voltage
OC
+150
-55
TSTG
Operating
temperature
TJ, (OC)
*5
TRR
(nS)
*1
VRRM
(V)
*3
VR
(V)
*4
VF
(V)
*2
VRMS
SYMBOLS
(V)
*1 Repetitive peak reverse voltage
*2 RMS voltage
50
35
50
FFM101AFG
FFM102AFG
FFM103AFG
70
100
200
400
100
200
400
150
140
280
*3 Continuous reverse voltage
1.30
-55 to +150
FFM104AFG
*4 Maximum forward voltage@IF=1.0A
600
420
560
700
600
250
500
FFM105AFG
FFM106AFG
FFM107AFG
*5 Maximum Reverse recovery time, note 1
800
800
1000
1000
=0.5A, I
Note 1. Reverse recovery time test condition, I
F
R
=1.0A, IRR=0.25A
REV:1.0
Page 1/3
@ 2018 Copyright By American First Semiconductor
FFM101AFG THRU FFM107AFG
Typical Characteristics
Fig.2 Typical Reverse Characteristics
100
Fig.1 Forward Current Derating Curve
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TJ=125°C
10
1.0
TJ=25°C
Single phase half-wave 60 Hz
resistive or inductive load
0.1
00
20
40
60
80
100 120
140
25
50
75
100
125
150
175
percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig.4 Typical Junction Capacitance
Fig.3 Typical Instaneous Forward
Characteristics
100
10
1
10
TJ=25°C
TJ=25°C
1.0
0.1
pulse with 300μs
1% duty cycle
0.01
0.1
1.0
10
100
0.0
0.5
1.0
1.5
2.0
2.5
Reverse Voltage (V)
Instaneous Forward Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
35
30
25
20
15
10
05
00
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
10
100
Number of Cycles
Page 2/3
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FFM101AFG THRU FFM107AFG
Package Dimension
SMAF
Unit: mm
∠ALL ROUND
∠ALL ROUND
M
A
V
HE
D
E
g
g
A
Top View
Bottom View
HE
∠
g
UNIT
A
C
D
E
e
max
mm
1.2
0.9
47
0.20
3.7
3.3
146
130
2.7
2.4
106
94
1.6
1.3
63
51
1.2
0.8
47
4.9
4.4
min
0.12
7.9
7°
max
mil
193
173
min
35
4.7
31
The recommended mounting pad size
1.6
(63)
1.6
(63)
2.2
(86)
mm
Unit ：
(mil)
Page 3/3
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