FIR7N60AALG [FIRST]
600V N-Channel MOSFET;
| 型号： | FIR7N60AALG |
| 厂家： | 
FIRST SEMI |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总9页 (文件大小：4147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FIR7N60ABPG/ALG
600V N-Channel MOSFET
Features:
PIN Connection TO-251/252
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
□ Unrivalled Gate Charge :Qg=25.9nC (Typ.).
□ BVDSS=600V,ID=7A
□ RDS(on) : 1.2Ω (Max) @VG=10V
□ 100% Avalanche Tested
TO‐251
TO‐252
g
Schematic dia ram
D
G
S
Marking Diagram
YAWW
Y
A
= Year
YAWW
FIR7N60ABP
= Assembly Location
= Work Week
FIR7N60AL
WW
= Specific Device Code
FIR7N60ABP/AL
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
600
7.0
Unit
VDSS
Drain-Source Voltage
Drain Current
V
Tj=25℃
ID
A
Tj=100℃
3.2
VGS(TH)
EAS
Gate Threshold Voltage
±30
230
V
Single Pulse Avalanche Energy (note1)
mJ
IAR
PD
Tj
Avalanche Current (note2)
Power Dissipation (Tj=25℃)
Junction Temperature(Max)
Storage Temperature
7.0
50
A
W
℃
℃
150
Tstg
-55~+150
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
TL
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.50
110
Unit
℃/W
℃/W
RθJC
RθJA
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
-
-
REV:1.0
Page 1/9
@ 2018 Copyright By American First Semiconductor
FIR7N60ABPG/ALG
Electrical Characteristics (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID=250μA，VGS=0
600
-
-
V
Breakdown Voltage Temperature
Coefficient
ID=250μA ,Reference
to 25℃
△BVDSS/△TJ
V/℃
-
VDS=600V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
μA
VDS=480V, Tj=
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
IGSSF
IGSSR
On Characteristics
VG=
VGS(TH)
RDS(ON)
Date Thresh
Static
O
Dynamic Ch
-
135
16
-
-
-
pF
-
-
-
-
-
-
-
30
80
70
170
140
130
-
Charge
rain Charge
D=300V，ID=7A
RG=25ꢀ (Note 3,4)
nS
81
60
25.9
7
VDS=480V,VGS=10V，
ID=7A (Note 3,4)
-
nC
14.5
-
de Characteristics and Maximum Ratings
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
-
-
-
-
-
-
7
28
1.4
-
A
ISM
VSD
Trr
-
-
-
ID=7A
V
IS=7A,VGS =0V
diF/dt=100A/μs
(Note3)
Reverse Recovery Time
320
nS
Qrr
Reverse Recovery Charge
-
2.4
-
μC
Notes : 1, L=17.1mH, IAS=7A, VDD=50V, RG=25ꢀ, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
Page 9/9
www.First-semi.com
FIR7N60ABPG/ALG
Typical Characteristics
VGS
Top:
15.0 V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
101
100
101
100
150oC
Bottom: 5.0 V
25oC
※
Notes :
1. 250µ s Pulse Test
2. TC = 25
-1
10
℃
-1
10
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Reg
3.5
※
Notes :
1. VGS = 0V
25℃
2. 250µ s Pulse Test
2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
e
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1200
1000
800
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
gd
VDS = 120V
VDS = 300V
C
iss
VDS = 480V
6
C
oss
4
※
Notes ;
600
1. VGS = 0 V
C
2. f = 1 MHz
rss
400
2
200
※
Note : ID = 8A
25
0
0
10
0
5
10
15
20
30
-1
0
1
10
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Page 9/9
www.First-semi.com
FIR7N60ABPG/ALG
Typical Characteristics (Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.9
※
Notes :
1. V = 0 V
2. IDG=S 250 µ A
0.8
-100
-50
0
50
100
150
2
T, Junction Temperature [oC]
J
Figure 7. Breakdown Vo
vs Tem
2
10
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0 .5
10 0
0 .2
0 .1
※
N otes
:
0 .0 5
1 0 -1
1. Z
(t)
= 2.6 ℃ /W M ax.
2. DθuJtCy Factor, D =t1/t2
0 .0 2
3. TJM
- TC = P D M * Zθ JC(t)
0 .0 1
PDM
s in g le p u lse
t1
1 0 -2
t2
10 -5
1 0-4
1 0-3
10 -2
10 -1
10 0
10 1
t1, S quare W ave P ulse D uration [sec]
Figure 11-2. Transient Thermal Response Curve for FIR7N60AFG
Page 9/9
www.First-semi.com
FIR7N60ABPG/ALG
Gate Charge Test Circuit & Waveform
Page 9/9
www.First-semi.com
FIR7N60ABPG/ALG
Peak Diode Recovery dv/dt Test Circuit & Waveform
Page 9/9
www.First-semi.com
FIR7N60ABPG/ALG
Unit: mm
Package Dimension
TO-251
m
MM
NOM
SYMBOL
MIN
MAX
A
A2
b
b1
b3
c
2.20
0.97
0.72
0.71
5.23
0.47
0.46
6.00
2.30
1.07
0.78
0.76
5.33
0.53
0.51
6.10
2.38
1.17
0.85
0.81
5.46
0.58
0.56
6.20
c1
D
D1
E
E1
e
5.30REF
6.60
4.83
2.286BSC
16.40
9.40
1.02
1.80
7°
6.50
4.70
6.70
4.92
H
16.10
9.20
0.90
1.70
5°
16.60
9.60
1.25
1.90
9°
L1
L3
L5
1
2
5°
7°
9°
Page 9/9
www.First-semi.com
FIR7N65ABPG/ALG
Package Dimension
TO-252
Unit: mm
Page 8/9
www.First-semi.com
FIR7N60ABPG/ALG
Declaration
z
FIRST reserves the right to change the specifications, the same specifications of products due to different
packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!
Customers should obtain the latest version information before ordering, and verify whether the relevant
information is complete and up-to-date.
Any semiconductor product under certain conditions has the possibility of failure or failures the
z
z
responsibility to comply with safety
standards and take safety measures when using FIRST products for systeo
avoid To avoid potential failure risks, which may cause personal injury
Product promotion endless, our company will wholeheartedly pro
ATTACHMENT
Revision History
Date
REV
2018.01.01
1.0
Page 9/9
www.First-semi.com
相关型号：
FIRADEC固态钽电容CTS21系列
固态钽电容CTS21/CTS21M/CTS21E的特点： 容值：5.6~1000μF 耐压：6.3~63V 工作温度：-55~+125℃ 金属壳密封 超低ESR，高浪涌电流 CTS21/CTS21E符合CECC 30201-040认证 CTS21M符合MIL-PRF-39003/09认证 固态钽电容CTS21系列可应用于航天、铁路、医疗、军事领域 Firadec是钽电容的专业生产厂商，主要产品有固态和液态钽电容，并提供定制产品。 本信息网址：http://www.wellking.com/default/NewProductShow.asp?ID=435
ETC
FIRADEC高温液态钽电容CT9HT/CT9EHT系列
高温液态钽电容CT9HT/CT9EHT系列的特点： 额定电压：CT9HT→6.3V~150V CT9EHT→6.3V~125V 容值范围：CT9HT→3μF~1200μF CT9EHT→4.7μF~2200μF 工作温度：-55~+175℃ 容值误差：±20%，±10% 液态钽电容CT79HT/CT79EHT系列符合CECC 30202-004认证 液态钽电容CT9HT/CT9EHT系列可应用于石油、航天、铁路、医疗、军事领域 Firadec是钽电容的专业生产厂商，主要产品有固态和液态钽电容，并提供定制产品。 本产品信息网址：http://www.wellking.com/default/NewProductShow.asp?ID=357
FILTRAN
FIRADEC高温钽电容CT79HT系列
高温液态钽电容CT79HT/CT79EHT系列的特点： 容值范围：CT79HT→1.7μF~1200μF CT79EHT→1.7μF~2200μF 额定电压：6.3V~125V 工作温度：-55~+200℃ 容值误差：±20%，±10% 钽壳封装，轴向型/表贴型 液态钽电容CT79HT/CT79EHT系列符合CECC 30202-005 30202-001 30202-801，ESCC 3003/005认证 高温液态钽电容CT79HT/CT79EHT系列可应用于石油、航天、铁路、医疗、军事领域 Firadec是钽电容的专业生产厂商，主要产品有固态和液态钽电容，并提供定制产品。 本信息网址：http://www.wellking.com/default/NewProductShow.asp?ID=340
FILTRONIC
©2020 ICPDF网 联系我们和版权申明