EGFM104 [FORMOSA]
Chip Effcienct Fast Rectifiers;
| 型号： | EGFM104 |
| 厂家： | 
FORMOSA MS |
| 描述： | Chip Effcienct Fast Rectifiers |
| 文件： | 总7页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
List
1
2
2
2
2
3
4
4
4
5
6
6
7
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121514
Issued Date
2008/02/10
Revised Date
2010/05/10
Revision
D
Page.
7
Page 1
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
1.0A Sufrace Mount
Efficient Fast Rectifiers-50-600V
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SMA
• Low profile surface mounted application in order to
optimize board space.
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
• High current & surge capability.
• Low forward dropdown voltage
• Glass passivated chip junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.106(2.7)
0.091(2.3)
• Suffix "-H" indicates Halogen free parts, ex. EGFM101-H.
0.068(1.7)
0.060(1.5)
Mechanical data
0.032(0.8) Typ.
0.032 (0.8) Typ.
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
MAX.
Symbol
IO
TYP.
UNIT
A
MIN.
PARAMETER
CONDITIONS
1.0
Forward rectified current
See Fig.2
30
IFSM
Forward surge current
Reverse current
A
8.3ms single half sine-wave (JEDEC methode)
VR = VRRM TJ = 25OC
5.0
IR
μA
VR = VRRM TJ = 125OC
100
CJ
pF
OC
Diode junction capacitance
Storage temperature
f=1MHz and applied 4V DC reverse voltage
15
+175
-65
TSTG
Operating
temperature
TJ, (OC)
*5
*1
*3
VR
(V)
*4
VF
(V)
*2
*1 Repetitive peak reverse voltage
*2 RMS voltage
VRMS
(V)
trr
(ns)
SYMBOLS
VRRM
(V)
50
35
70
50
EGFM101
EGFM102
EGFM103
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Maximum Reverse recovery time, note 1
100
200
100
200
0.875
140
25
-55 to +150
EGFM104
EGFM105
400
600
400
600
1.25
1.75
280
420
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121514
Issued Date
2008/02/10
Revised Date
2010/05/10
Revision
D
Page.
7
Page 2
Rating and characteristic curves (EGFM101 THRU EGFM105)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
10
1
EGFM101 - EGFM103
1.2
1.0
0.8
0.6
EGFM104
P.C.B. Mounted on
TJ=25 OC
0.4
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
0.2
0
0.1
0
25
50
75
100
125
150
175
EGFM105
LEAD TEMPERATURE ( °C)
pulse width =300us
1% duty cycle
0.01
0.4 0.6 0.8 1.0
1.2 1.4 1.6 1.8 2.0
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FORWARD VOLTAGE,(V)
50
40
30
20
10
0
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
8.3ms Single Half
TJ=25 C
Sine Wave
JEDEC method
50
NONINDUCTIVE
W
10W
NONINDUCTIVE
(
)
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
50
1
5
10
100
(
)
(+)
NUMBER OF CYCLES AT 60Hz
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
TJ=25 C
f=1.0MHZ
Vsig = 50mVp-p
trr
30
25
20
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
15
10
5
-1.0A
1cm
SET TIME BASE FOR
10 / 20ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121514
Issued Date
2008/02/10
Revised Date
2010/05/10
Revision
D
Page.
7
Page 3
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
Pinning information
Pin
Simplified outline
Symbol
Pin1 cathode
Pin2 anode
1
2
1
2
Marking
Type number
Marking code
EGFM101
EGFM102
EGFM103
EGFM104
EGFM105
E11
E12
E13
E14
E15
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SMA
A
B
C
0.110 (2.80)
0.063 (1.60)
0.087 (2.20)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121514
Issued Date
2008/02/10
Revised Date
2010/05/10
Revision
D
Page.
7
Page 4
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
Packing information
P0
P1
d
E
F
W
B
A
P
D2
D1
T
C
W1
D
unit:mm
Symbol
SMA
Item
Tolerance
Carrier width
A
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.80
5.00
Carrier length
B
Carrier depth
C
1.90
Sprocket hole
d
1.50
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
D
330.00
50.00
178.00
62.00
13.00
1.75
D1
D
D1
D2
E
F
5.50
P
4.00
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
P0
P1
T
4.00
2.00
0.23
W
W1
12.00
18.00
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121514
Issued Date
2008/02/10
Revised Date
2010/05/10
Revision
D
Page.
7
Page 5
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
Reel packing
APPROX.
GROSS WEIGHT
COMPONENT
SPACING
INNER
BOX
REEL
DIA,
CARTON
SIZE
BOX
(pcs)
CARTON
(pcs)
REEL
(pcs)
PACKAGE
REEL SIZE
(m/m)
(m/m)
(m/m)
(kg)
(m/m)
4.0
4.0
178
330
160,000
120,000
16.0
14.2
SMA
SMA
7"
2,000
7,500
20,000 183*155*183
15,000
382*356*392
350*330*360
13"
337*337*37
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55% 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t25oC to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(TL to TP)
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(ts)
150oC
200oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL)
-Time(tL)
217oC
60~260sec
Peak Temperature(TP)
255oC-0/+5oC
Time within 5oC of actual Peak
Temperature(tP)
10~30sec
Ramp-down Rate
<6oC/sec
Time 25oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121514
Issued Date
2008/02/10
Revised Date
2010/05/10
Revision
D
Page.
7
Page 6
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
High reliability test capabilities
Item Test
Conditions
at 260 5OC for 10 2sec.
immerse body into solder 1/16" 1/32"
Reference
1. Solder Resistance
MIL-STD-750D
METHOD-2031
at 245 5OC for 5 sec.
2. Solderability
MIL-STD-202F
METHOD-208
VR=80% rate at TJ=150OC for 168 hrs.
Rated average rectifier current at TA=25OC for 500hrs.
3. High Temperature Reverse Bias
4. Forward Operation Life
5. Intermittent Operation Life
6. Pressure Cooker
MIL-STD-750D
METHOD-1038
MIL-STD-750D
METHOD-1027
TA = 25OC, IF = IO
MIL-STD-750D
METHOD-1036
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
JESD22-A102
15PSIG at TA=121OC for 4 hrs.
MIL-STD-750D
METHOD-1051
-55OC to +125OC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
7. Temperature Cycling
8. Forward Surge
MIL-STD-750D
METHOD-4066-2
8.3ms single half sine-wave , one surge.
at TA=85OC, RH=85% for 1000hrs.
at 175OC for 1000 hrs.
MIL-STD-750D
METHOD-1021
9. Humidity
MIL-STD-750D
METHOD-1031
10. High Temperature Storage Life
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121514
Issued Date
2008/02/10
Revised Date
2010/05/10
Revision
D
Page.
7
Page 7
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