EGFM105-M [FORMOSA]
Chip Effcienct Fast Rectifiers;
| 型号： | EGFM105-M |
| 厂家： | 
FORMOSA MS |
| 描述： | Chip Effcienct Fast Rectifiers |
| 文件： | 总7页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101-M THRU EGFM105-M
List
1
2
2
2
2
3
4
4
4
5
6
6
7
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121511
Issued Date
2008/02/10
Revised Date
2015/01/21
Revision
F
Page.
7
Page 1
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101-M THRU EGFM105-M
1.0A Sufrace Mount
Efficient Fast Rectifiers-50-600V
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123
• Low profile surface mounted application in order to
optimize board space.
0.154(3.9)
0.138(3.5)
• High current & surge capability.
• Low forward dropdown voltage
• Glass passivated chip junction.
0.012(0.3) Typ.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.075(1.9)
0.060(1.5)
• Suffix "-H" indicates Halogen free parts, ex. EGFM101-M-H.
Mechanical data
0.067(1.7)
0.051(1.3)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123 / MINI SMA
0.028(0.7) Typ.
0.028(0.7) Typ.
• Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.018 gram
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
MAX.
Symbol
IO
TYP.
UNIT
A
MIN.
PARAMETER
CONDITIONS
1.0
Forward rectified current
See Fig.2
IFSM
Forward surge current
Reverse current
20
A
8.3ms single half sine-wave (JEDEC methode)
VR = VRRM TJ = 25OC
5.0
IR
μA
VR = VRRM TJ = 125OC
100
CJ
pF
OC
Diode junction capacitance
Storage temperature
f=1MHz and applied 4V DC reverse voltage
15
+175
-65
TSTG
Operating
temperature
TJ, (OC)
*5
*1
*3
VR
(V)
*4
VF
(V)
*2
*1 Repetitive peak reverse voltage
*2 RMS voltage
VRMS
(V)
trr
(ns)
SYMBOLS
VRRM
(V)
50
35
70
50
EGFM101-M
EGFM102-M
EGFM103-M
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Maximum Reverse recovery time, note 1
100
200
100
200
0.875
140
25
-55 to +150
EGFM104-M
EGFM105-M
400
600
400
600
1.25
1.75
280
420
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121511
Issued Date
2008/02/10
Revised Date
2015/01/21
Revision
F
Page.
7
Page 2
Rating and characteristic curves (EGFM101-M THRU EGFM105-M)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
0.8
0.6
10
1
EGFM101-M - EGFM103-M
EGFM104-M
P.C.B. Mounted on
0.4
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
0.2
0
TJ=25°C
0
25
50
75
100
125
150
175
LEAD TEMPERATURE (°C)
0.1
EGFM105-M
pulse width =300μs
1% duty cycle
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0.01
0.4 0.6 0.8 1.0
1.2 1.4 1.6 1.8 2.0
50
40
30
20
10
0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
8.3ms Single Half
TJ=25 C
Sine Wave
JEDEC method
50
NONINDUCTIVE
W
10W
NONINDUCTIVE
(
)
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
50
1
5
10
100
(
)
(+)
NUMBER OF CYCLES AT 60Hz
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
TJ=25 C
f=1.0MHZ
Vsig = 50mVp-p
trr
30
25
20
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
15
10
5
-1.0A
1cm
SET TIME BASE FOR
10 / 20ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121511
Issued Date
2008/02/10
Revised Date
2015/01/21
Revision
F
Page.
7
Page 3
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101-M THRU EGFM105-M
Pinning information
Pin
Simplified outline
Symbol
Pin1 cathode
Pin2 anode
1
2
1
2
Marking
Type number
Marking code
EGFM101-M
EGFM102-M
EGFM103-M
EGFM104-M
EGFM105-M
E1
E2
E3
E4
E5
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SOD-123
A
B
C
0.075 (1.90)
0.055 (1.40)
0.075 (1.90)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121511
Issued Date
2008/02/10
Revised Date
2015/01/21
Revision
F
Page.
7
Page 4
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101-M THRU EGFM105-M
Packing information
P0
P1
d
E
F
W
B
A
P
D2
D1
T
C
W1
D
unit:mm
Symbol
SOD-123
Item
Tolerance
Carrier width
A
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
1.90
3.90
1.68
1.50
-
Carrier length
B
Carrier depth
C
Sprocket hole
d
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
D
D1
D
-
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
D1
D2
E
F
P
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
P0
P1
T
W
W1
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121511
Issued Date
2008/02/10
Revised Date
2015/01/21
Revision
F
Page.
7
Page 5
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101-M THRU EGFM105-M
Reel packing
COMPONENT
SPACING
INNER
BOX
REEL
DIA,
CARTON
SIZE
APPROX.
GROSS WEIGHT
PACKAGE
SOD-123
REEL SIZE
7"
CARTON
(pcs)
REEL
(pcs)
BOX
(pcs)
(m/m)
(m/m)
(m/m)
(kg)
(m/m)
4.0
2,500
25,000
183*183*123
178
382*262*387
200,000
9.5
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55% 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t25oC to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(TL to TP)
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(ts)
150oC
200oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL)
-Time(tL)
217oC
60~260sec
Peak Temperature(TP)
255oC-0/+5oC
Time within 5oC of actual Peak
Temperature(tP)
10~30sec
Ramp-down Rate
<6oC/sec
Time 25oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121511
Issued Date
2008/02/10
Revised Date
2015/01/21
Revision
F
Page.
7
Page 6
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101-M THRU EGFM105-M
High reliability test capabilities
Item Test
Conditions
at 260 5OC for 10 2sec.
immerse body into solder 1/16" 1/32"
Reference
1. Solder Resistance
MIL-STD-750D
METHOD-2031
at 245 5OC for 5 sec.
2. Solderability
MIL-STD-202F
METHOD-208
VR=80% rate at TJ=150OC for 168 hrs.
Rated average rectifier current at TA=25OC for 500hrs.
3. High Temperature Reverse Bias
4. Forward Operation Life
5. Intermittent Operation Life
6. Pressure Cooker
MIL-STD-750D
METHOD-1038
MIL-STD-750D
METHOD-1027
TA = 25OC, IF = IO
MIL-STD-750D
METHOD-1036
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
JESD22-A102
15PSIG at TA=121OC for 4 hrs.
MIL-STD-750D
METHOD-1051
-55OC to +125OC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
7. Temperature Cycling
8. Forward Surge
MIL-STD-750D
METHOD-4066-2
8.3ms single half sine-wave , one surge.
at TA=85OC, RH=85% for 1000hrs.
at 175OC for 1000 hrs.
MIL-STD-750D
METHOD-1021
9. Humidity
MIL-STD-750D
METHOD-1031
10. High Temperature Storage Life
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-121511
Issued Date
2008/02/10
Revised Date
2015/01/21
Revision
F
Page.
7
Page 7
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