FM1100-L [FORMOSA]
Chip Schottky Barrier Diodes - Silicon epitaxial planer type; 芯片肖特基势垒二极管 - 硅外延平面型
| 型号： | FM1100-L |
| 厂家： | 
FORMOSA MS |
| 描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Schottky Barrier Diodes
Formosa MS
FM120-L THRU FM1100-L
Silicon epitaxial planer type
Features
SMA-L
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
For surface mounted applications.
0.110(2.8)
0.094(2.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.181(4.6)
0.165(4.2)
Low leakage current.
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
1.0
UNIT
A
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
30
A
o
VR = VRRM TA = 25 C
0.5
10
mA
mA
Reverse current
IR
o
VR = VRRM TA = 125 C
o
Thermal resistance
Junction to ambient
RqJA
CJ
88
C / w
pF
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
120
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
MARKING
V
V
V
V
RRM
RMS
R
F
temperature
SYMBOLS
CODE
o
( C)
(V)
20
(V)
14
(V)
20
(V)
FM120
FM130
FM140
FM150
FM160
FM180
FM1100
SS12
SS13
SS14
SS15
SS16
SS18
S110
30
40
21
28
35
42
56
70
30
40
0.50
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
50
50
0.70
60
60
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage
80
80
0.85
100
100
RATINGAND CHARACTERISTIC CURVES (FM120-L THRU FM1100-L)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
0.8
0.6
50
10
3.0
1.0
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
24
.01
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
18
8.3ms Single Half
Sine Wave
Tj=25 C
12
JEDEC method
6
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
0
50
1
5
10
100
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
350
300
250
200
1.0
Tj=75 C
150
100
50
.1
Tj=25 C
0
.01
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
相关型号：
FM1100-W
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
RECTRON
FM1100B
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 80 to 100 Volts CURRENT 1.0 Ampere
RECTRON
FM1100B-W
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AA, PLASTIC PACKAGE-2
RECTRON
©2020 ICPDF网 联系我们和版权申明