HFM207-L [FORMOSA]
Chip Silicon Rectifier - Ultra fast recovery type; 芯片硅整流 - 超快速恢复型
| 型号： | HFM207-L |
| 厂家： | 
FORMOSA MS |
| 描述： | Chip Silicon Rectifier - Ultra fast recovery type |
| 文件： | 总2页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Silicon Rectifier
Formosa MS
HFM201-L THRU HFM207-L
Ultra fast recovery type
Features
SMA-L
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
0.181(4.6)
0.165(4.2)
Low leakage current.
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
1.0
UNIT
A
o
Ambient temperature = 50 C
Forward rectified current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
50
A
o
VR = VRRM TA = 25 C
5.0
150
uA
uA
Reverse current
IR
o
VR = VRRM TA = 100 C
o
Thermal resistance
Junction to ambient
RqJA
CJ
20
25
C / w
pF
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
*5
VRRM
VRMS
VR
VF
TRR
MARKING
temperature
SYMBOLS
CODE
o
( C)
(V)
(V)
(V)
(V)
(nS)
HFM201-L
HFM202-L
HFM203-L
HFM204-L
HFM205-L
HFM206-L
HFM207-L
H21
H22
H23
H24
H25
H26
H27
50
35
50
100
200
400
600
800
1000
1.0
100
200
400
600
800
70
*1 Repetitive peak reverse voltage
*2 RMS voltage
50
140
280
420
560
700
-55 to +150
1.3
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
1.7
75
1000
RATINGAND CHARACTERISTIC CURVES (HFM201-L THRU HFM207-L)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
10
1.0
.1
2.4
2.0
1.6
1.2
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
P.C.B. MOUNTED ON
0.3" * 0.3" (8.0mm * 8.0mm)
COPPER PAD AREAS
0.8
0.4
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
0
.001
.4
1.6 1.8
.6
.8
1.0 1.2 1.4
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
8.3ms Single Half
Tj=25 C
Sine Wave
50
W
10W
NONINDUCTIVE
NONINDUCTIVE
JEDEC method
(
)
(+)
D.U.T.
25Vdc
PULSE
GENERATOR
(NOTE 2)
(approx.)
50
1
5
10
100
(
)
(+)
NUMBER OF CYCLES AT 60Hz
1W
OSCILLISCOPE
(NOTE 1)
NON-
INDUCTIVE
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
trr
120
100
80
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
60
40
20
0
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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