HFM207W [RECTRON]

SURFACE MOUNT HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes; 表面贴装高效率硅整流电压范围50到1000伏特电流2.0安培


型号：	HFM207W
厂家：	RECTRON SEMICONDUCTOR
描述：	SURFACE MOUNT HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes 表面贴装高效率硅整流电压范围50到1000伏特电流2.0安培功效
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HFM201W

THRU

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

HFM208W

SURFACE MOUNT

HIGH EFFICIENCY SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes

FEATURES

* Ideal for surface mounted applications

* Low leakage current

* Metallurgically bonded construction

* Mounting position: Any

.220 (5.59)

* Weight: 0.098 gram

.205 (5.21)

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

.155 (3.94)

.130 (3.30)

.083 (2.11)

.077 (1.96)

.096 (2.44)

.084 (2.13)

.012 (0.305)

.006 (0.152)

.180 (4.57)

.160 (4.06)

.060 (1.52)

.030 (0.76)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

HFM201W HFM202W HFM203W HFM204W HFM205W HFM206W HFM207W HFM208W

SYMBOL

UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Volts

100

200

140

200

600

420

600

RRM

RMS

300

210

300

400

280

400

800

560

800

1000

700

Volts

Maximum DC Blocking Voltage

Maximum Average Forward Current

100

1000

2.0

Amps

at TA

= 50^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

Typical Junction Capacitance (Note 2)

⁰C

Operating and Storage Temperature Range

, TSTG

-55 to + 150

ELECTRICAL CHARACTERISTICS (At TA

= 25^oC unless otherwise noted)

HFM201W HFM202W HFM203W HFM204W HFM205W HFM206W HFM207W HFM208W

UNITS

Volts

CHARACTERISTICS

Maximum Forward Voltage at 2.0A DC

Maximum Full Load Reverse Current, Full cycle Average

SYMBOL

1.7

1.0

1.3

= 55^oC

uAmps

Maximum DC Reverse Current at

Rated DC Blocking Voltage

= 25^oC

5.0

uAmps

= 125^oC

100

Maximum Reverse Recovery Time (Note 1)

trr

nSec

NOTES : 1. Test Conditions: I

=0.5A, I

R=-1.0A, IRR=-0.25A.

2002-11

2. Measured at 1 MH

and applied reverse voltage of 4.0 volts.

(

)

RATING AND CHARACTERISTIC CURVES HFM201W THRU HFM208W

FIG. 2 - TYPICAL FORWARD

CURRENT DERATING CURVE

FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

trr

NONINDUCTIVE

+0.5A

4.0

2.0

Single Phase

Half Wave 60Hz

Resistive or

( - )

PULSE

GENERATOR

(NOTE 2)

D.U.T

( + )

25 Vdc

(approx)

( - )

Inductive Load

-0.25A

OSCILLOSCOPE

(NOTE 1)

( + )

NON-

INDUCTIVE

-1.0A

1cm

25 50 75 100125150175

Rise Time = 7ns max. Input Impedance =

1 megohm. 22pF.

NOTES:

SET TIME BASE FOR

10/20 ns/cm

AMBIENT TEMPERATURE (

)

2. Rise Time = 10ns max. Source Impedance =

50 ohms.

FIG. 4 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

100

= 150

= 100

1.0

HFM204W~HFM205W

HFM206W~HFM208W

HFM201W~HFM203W

1.0

= 25

.01

Pulse Width = 300uS

1% Duty Cycle

.001

.01

100

120 140

.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8

INSTANTANEOUS FORWARD VOLTAGE, (V)

PERCENT OF RATED PEAK

REVERSE VOLTAGE, (%)

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

200

100

8.3ms Single Half Sine-Wave

(

)

JEDEC Method

HFM201W~HFM205W

HFM206W~HFM208W

= 25

.1 .2 .4

1.0

10 20 40 100

100

NUMBER OF CYCLES AT 60Hz

REVERSE VOLTAGE, ( V )

RECTRON

Mounting Pad Layout

0.106 MAX.

(2.69 MAX.)

0.083 MIN.

(2.10 MIN.)

0.050 MIN.

(1.27 MIN.)

0.220 REF

Dimensions in inches and (millimeters)

RECTRON

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