DW01HA [FORTUNE]
One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET;
| 型号： | DW01HA |
| 厂家： | 
Fortune Semiconductor |
| 描述： | One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET 电池 |
| 文件： | 总14页 (文件大小：1101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REV. 1.3
DW01HA-DS-13_EN
JAN 2014
Datasheet
DW01HA
One Cell Lithium-ion/Polymer Battery Proection IC With ilt-in MOSFET
DW01HA
Fortune Semiconductor Corporation
富晶電子股份有限公司
23F,No.29-5, Sec. 2, Zhongzheng E. Rd.,
Danshui Dist, New Taipei City 251, Taiwan
Tel.：886-2-28094742
Fax：886-2-28094874
www.ic-fortune.com
This manual contins new ct information. Fortune Semiconductor Corporation reserves the rights to
modify the prouct spcification without further notice. No liability is assumed by Fortune Semiconductor
Corporation as a rsult of the use of this product. No rights under any patent accompany the sale of the
product.
Rev. 1.3
2/14
DW01HA
1. General Description
3. Ordering Information
The DW01HA battery protection IC is designed to
protect lithium-ion/polymer battery from damage or
degrading the lifetime due to overcharge,
overdischarge, and/or overcurrent for one-cell
lithium-ion/polymer battery powered systems, such
as cellular phones.
DW01HA-x
Serial code from S、D*
(S：SOT-23-6 Green-Package)
(D：DFN-5 Green-Package)
The ultra-small package and less required external
components make it ideal to integrate the DW01HA
into the limited space of battery pack. The accurate
±25mV overcharging detection voltage ensures safe
and full utilization charging. The very low standby
current drains little current from the cell while in
storage.
TEMPERATURE RANGE
-40°C~+85°C
4. Applications
z
Protection IC for One-Cell Lithium-In /
Lithium-Polymer Battery Pack
2. Features
z
z
z
With built-in N-MOSFET of low turn-on
resistance.
Reduction in Board Size de to Miniature
Package SOT-23-6, DFN-5.
Protection IC
Ultra-Low uiescent Current at 2.5μ
(VV).
verdischarge Curr
1=2.0V).
Overcharge Protection V
4.28V ± 25mV
Overdischartection Voltage
2.4V ± 100m
Overcurrent Protection Voltage
150mV ± 15mV
Auto Recovery function
z
MOSFET：
Rss(ON) ＜ 55mΩ
(VGS = 3.7V , ID = 1)
Rev. 1.3
3/14
DW01HA
5. Product Name List
Built-in
N-MOSFET
source to
source
Overcharge Overcharge Overdischarge Overdischarge Overcurrent
0V
Standby
detection
voltage
release
voltage
detection
voltage
release
voltage
detection
voltage
change function
function release
Model Package
Ron
[RSS(ON)]
(mΩ)
[VOCP] (V) [VOCR] (V)
[VODP] (V)
[VODR] (V)
[VOI1] (V)
AUTO
NO
< 55
< 55
DW01HA SOT-23-6 4.28±0.025 4.08±0.050
2.40±0.100
2.40±0.100
2.5±0.100
2.50±0.100
0.150±15mV
0.150±15mV
recovery
AUTO
NO
DW01HA DFN-5
4.28±0.025 4.08±0.050
recovery
6. Pin Configurand Package Marking Information
Pin No. Symbol
Description
3
4
5
6
GND
D12
Ground pi
Two MOSFmmon drain connection pin
BATT- Conegaive of charger oad
CS
C
Input for current sense, carger detect
Two MOSFET common connection pin
Power supply, throgh a esisor (R1)
Top Point and Under_line：Lot No.
Bottom Point：Yea
W : week, A~Z & A
Rev. 1.3
4/14
DW01HA
Pin No. Symbol
Description
1
2
3
4
5
6
NC
NC
GND
Ground pin
BATT- Connect to negative of charger or load
VCC
CS
Power supply, through a resistor (R1)
Input pin for current sense, chrger detect
Tow MOSFET common dran conection pin
D12
C：Year.
B：Week Code, A~Z & A ~ Z
001 :Serial nu
Rev. 1.3
5/14
DW01HA
7. Functional Block Diagram
Charge Over
Current Detector
8. Typical Application Circuit
Symbol
R1
Purpose
ESD protectio.
For power fluctuation.
Recommended
Remakes
100~470Ω
Resistance should be as small as
possible to avoid lowering of the
overcharge detection accuracy
caused by VDD pin current. Use
470Ω for better ESD protection.
C1
R2
For power fluctuation.
Proection for reverse
connection of a
charger.
0.1μF
1k~2kΩ
Select a resistance as large as
possible to prevent large current
when a charge is connected in
reverse.
Rev. 1.3
6/14
DW01HA
9. Absolute Maximum Ratings
(GND=0V, Ta=25°C unless otherwise specified)
Item
Symbol
VCC
VCS
Rating
GND-0.3 to GND+15
VCC -30 to VCC +0.3
-40 to +85
Unit
V
Input voltage between VCC and GND *
CS input pin voltage
V
Operating Temperature Range
Storage Temperature Range
Drain-Source Voltage
TOP
°C
°C
V
TST
-40 to +125
20
VDS
Gate-Source Voltage
VGS
±12
V
ID
Continuous Drain Current3
6.8
A
@TA=25℃
ID
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
4.3
25
@TA=100℃
IDM
PD
@TA=25℃
1.4
W
℃
℃
Storage Temperature Range
TSTG
TJ
-55 to 150
-55 to 150
Operating Junction Tture Rang
Note: DW01ains a circuit that will protect it fom static discharge; but pease take special care that no
exceelectricity or voltage xceeds the limit of the rotection circuit will be applied to it.
Rev. 1.3
7/14
DW01HA
10. Electrical Characteristics
(Ta=25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS SYMBOL Min
Typ
2.5
Max
5.2
UNIT
Supply Current
VCC=3.9V
VCC=2.0V
DW01HA
ICC
μA
μA
V
1.8
4.5
Overdischarge Current
IOD
4.255
4.030
2.300
2.400
0135
0.60
4.280
4.080
2.400
2.500
0.150
0.70
4.305
4.130
2.500
0.80
Overcharge Protection Voltage
Overcharge Release Voltage
Overdischarge Protection Voltage
Overdischarge Release Voltage
Overcurrent Protection Voltage
Short Current Protection Volage
VOCP
VOCR
VODP
VODR
V
V
V
VOIP
（VOI
V
VSIP
（VOI2）
VCC=3.6V
VCC=3.6V
V
Charger over current detection
voltage
VCOIP
Vdet
Vrec
VST
-0.120 -0.0 0.080
V
Faulty charger deteltage
Faulty chargery voltage
0V charging pro
6.0
5.8
8.
7.3
10.0
8.8
V
V
0.65
130
65
0.95
200
100
20.0
1.0
1.25
280
V
Ovcharge Delay Time
TOC
TOD
TOI1
TOI2
Tdet
ms
ms
ms
ms
ms
140
Overdischarge Delay Time
Overcurrent Delay Time
Overcurrent Delay Time (2)
Charge over current delay time
VCC=3.6V to 2.0V
VCC=3.6V
13.3
0.60
5.10
26.5
1.80
12.75
VCC=3.6V
8.50
VCC=3.6V
N-MOSFET have low turn-on resis
Drain-Source Breakdown Voltage
VGS=V,ID=250uA
BVDSS
20
V
(BATT- to D12 / D12 to GND)
Breakdown Voltage Temperature
Coefficient
Reference to 25℃,
ΔBVDSS/Δ
V/℃
0.1
50
60
ID=1mA
Tj
Static Source-Source
On-Resistance (BATT- to
Static Source-Source
On-Resistance BATT- to GND)
Drain-Source Leakae Current)
(BATT- to D12 / D12 to GND)
Drain-Source Leakage Current
(BATT- to D12 / D12 to GND)
mΩ
mΩ
uA
VGS=3.7V,ID=1A
VGS=2.7V,ID=1A
VDS=16V,VGS=0V
VDS=16V,VGS=0V
55
70
1
RSS(ON)
IDSS
(Tj=25℃)
IDSS
(Tj=85℃)
30
uA
Rev. 1.3
8/14
DW01HA
11. Description of Operation
Overcurrent Protection
Normal Condition
If VODP<VCC<VOCP and VCH<VCS<VOI1, M1
and M2 are both turned on. The charging and
discharging processes can be operated normally.
In normal mode, the DW01HA continuously monitors
the discharge current by sensing the voltage of CS
pin. If the voltage of CS pin exceeds the overcurrent
protection voltage (VOIP) beyond the overcurrent
delay time (TOI1) period, the overcurrent protection
circuit operates and discharging is inhibited by
turning off the discharge control MOSFET. The
overcurrent condition returns to the normal mode
when the load is released or the impedance betwee
BATT+ and BATT- is larger than 500kΩ. The
DW01HA provides two overcurrent detection levels
(0.15V and 0.7V) with two overcurrent delay ime
(TOI1 and TOI2) corresponding to each ercurrent
detection level.
Overcharge Protection
When the voltage of the battery cell exceeds the
overcharge protection voltage (VOCP) beyond the
overcharge delay time (TOC) period, charging is
inhibited by turning off of the charge control
MOSFET. The overcharge condition is released in
two cases:
The voltage of the battery cell becomes lowethan
the overcharge release voltage (VOCR) throuh
self-discharge.
CharDetection after Overdische
The voltage of the battery cell falls below the
overcharge protection voltage (VOCP) and a load is
connected.
When the battery volis above VOCP, the
overcharge condition release even a load is
connected to the pac
Wen ovrdischarge occurs, the discharge control
MOSFET turns off and diging is inhibited.
However, charging is still mitted through the
parasitic diode of MOSFET. Once the charger is
connected to the bttery ack, the DW01HA
immediately turns on all the timing generation and
detection circuitry. Chaging progress is sensed if
the voltage between CS and GND is below charge
detection told voltage (VCH).
Overdiotection
When the voe battery cell goes belo
overdscharge protection voltage (Vbeyond
the overischarge delay time (eriod,
discharng is inhibited by turning off the ischarge
control MOSFET.
Ato Power Down recovery
TIC continues to operate even after the
rdischarge state has been entered. The
bttery voltage rising to the overdischarge
release voltage(VODR) or higher is the only
required condition for the IC to return to the
normal state.
The default of overdiscdelay time is 100ms.
Inhibition of discharging is immediately released
when the voltage of the battery cell becomes hig
than overdischarge release voltage (VODR) thr
charging.
Rev. 1.3
9/14
DW01HA
12. Design Guide
Protection the CS pin
Suppressing the Ripple and Disturbance
from Charger
R2 is used for latch-up protection when charger is
connected under overdischarge condition and
overstress protection at reverse connecting of a
charger.
To suppress the ripple and disturbance from charger,
connecting R1 and C1 to VCC is recommended.
Rev. 1.3
10/14
DW01HA
13. Timing Diagram
Overcharge Condition ÆLoad Discharging Æ Normal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
VOI1
GND
VCH
TOC
TOC
Overdindition Æ CharginCharger ÆNormal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
VOI2
GND
VCH
TOD
TOD
Rev. 1.3
11/14
DW01HA
Over Current Condition Æ Normal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
VOI2
VOI1
GND
I1
Rev. 1.3
12/14
DW01HA
14. Package Outline
Dimension (SOT-23-6)
Rev. 1.3
13/14
DW01HA
Dimension (DFN-5)
15. Revision History
Version Date
age
Description
1.0
2011/07/08
New release
Revise RSS(ON) 3.7V TYP : 50mΩ MAX : 55mΩ
RSS(ON) 2.7V TYP : 60mΩ MAX : 70mΩ
Revise Package Outline SOT-23-6
Revise Package Outline (DFN-5)
Revise VOI1 Specified Unit
1.1
201/09/07
8, 13
1.2
1.3
2012/09/12
2014/01/09
14
4
Rev. 1.3
14/14
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