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DW01MC-T [FORTUNE]

One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET;
DW01MC-T
型号： DW01MC-T
厂家： Fortune Semiconductor    Fortune Semiconductor
描述：

One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET

电池 光电二极管
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REV. 1.9  
DW01M-DS-19_EN  
May 2014  
Datasheet  
DW01M  
One Cell Lithium-ion/Polymer Battery Proection IC With ilt-in MOSFET  
DW01M  
Fortune Semiconductor Corporation  
富晶電子股份有限公司  
23F., No.29-5,Sec. 2, Zhongzheng E. Rd.  
Danshui Dist, New Taipei City 251, Taiwan  
Tel.：886-2-28094742  
Fax：886-2-28094874  
www.ic-fortune.com  
This manual cotains ew product information. Fortune Semiconductor Corporation reserves the rights to  
modify the product pecification without further notice. No liability is assumed by Fortune Semiconductor  
Corporation as a reult of the use of this product. No rights under any patent accompany the sale of the  
product.  
Rev. 1.9  
2/17  
DW01M  
3. Ordering Information  
1. General Description  
DW01MC-xx  
The DW01M battery protection IC with built-in  
N-MOSFET is designed to protect lithium-ion  
/polymer battery from damage or degrading the  
lifetime due to overcharge, overdischarge, and/or  
overcurrent for one-cell lithium-ion/polymer battery  
powered systems, such as cellular phones.  
Serial code from A*  
Serial code from S、T、D*  
(S：SOT-23-6 Green-Package)  
(T：TSSOP-8 Green-Package)  
(D：DFN-5 Green-Package)  
The ultra-small package and less required external  
components make it ideal to integrate the DW01M  
into the limited space of battery pack. The accurate  
±50mV overcharging detection voltage ensures safe  
and full utilization charging. The very low standby  
current drains little current from the cell while in  
storage.  
* Refer to the product name list on next page.  
EMPERATURE RANGE  
-40°C~+85°C  
2. Features  
4. Applicaions  
z
z
z
Built-in N-MOSFET of low turn-on  
resistance.  
z
Proon IC for One-Cell n /  
Lithm-Poymer Battery Pack  
Reduction in Board Sze due to Miniature  
Package TSSOP-8 or SOT-23-6 or DFN-5.  
Protection IC：  
„
Ultra-Loescent Current at 3μA  
(Vcc=3.9V).  
„
e Protection Voltage  
4V (DW01MC-X)  
Overcharge Protection V
4.28V ± 70mV (DW01MC-X
Overdischartection Voltage  
2.4V ± 100
„
„
(DW01MC-X, DW01MC-XA)  
Overcurrent Protection Voltage  
150mV ± 30mV  
„
„
(DW01MC-X, DW01MC-
Auto Recovery function  
z
MOSFET：  
„
Rss(ON) ＜ 55mΩ  
(VGS = 3.7V ,
(DW01MC-X)  
„
Rss(O＜ 60mΩ  
(VGS = 3.7V , ID = 1A)  
(DW01MC-XA)  
Rev. 1.9  
3/17  
DW01M  
5. Product Name List  
Overcharge Overcharge Overdischarge Overdischarge Overcurrent  
0V  
change  
function  
Standby  
function  
release  
detection  
voltage  
release  
voltage  
detection  
voltage  
release  
voltage  
detection  
voltage  
Model  
[VOCP] (V) [VOCR] (V)  
[VODP] (V)  
[VODR] (V) [VOI1] (mV)  
NO  
NO  
NO  
NO  
NO  
NO  
Auto  
Auto  
Auto  
Auto  
Auto  
DW01MC-S 4.30±0.050 4.100±0.050  
DW01MC-T 4.30±0.050 4.100±0.050  
DW01MC-D 4.30±0.050 4.100±0.050  
DW01MC-SA 4.28±0.070 4.080±0.070  
DW01MC-TA 4.28±0.070 4.080±0.070  
DW01MC-DA 4.28±0.070 4080±0.070  
2.40±0.100  
2.40±0.100  
2.40±0.10  
20±0.100  
2.4±0.100  
2.4±0.100  
3.±0.100  
3.00.100  
3.0±000  
3.0±0.100  
3.0±0.100  
3.0±0.100  
150±30  
150±30  
150±30  
150±30  
150±30  
15030  
6. Pin Configuand Package Marking Information  
Pin No. bol  
Decription  
1
2
3
4
5
6
7
8
VCC  
VCC  
CS  
Ground pin  
Ground pin  
Power supplh a resistor (R1)  
Power suply, through a resistor (R1)  
in for current sensecharetet  
BATT- Cnect to negative of charger or load  
BATT- Connect to negative of er or load  
D12  
Two MOSFET mon rain onnection pin  
TSSOP-8  
Top View  
1
GND  
GND  
VCC  
VCC  
8
7
6
5
D12  
BATT-  
2
3
4
X：Serial Code, C, D  
N：Serial Code, A  
A：Year Code, A~Z & A ~ Z.  
B：Week Code, A~Z & A ~ Z  
CCC：Lot Code  
BATT-  
CS  
Rev. 1.9  
4/17  
DW01M  
Pin No. Symbol  
Description  
1
2
3
4
5
6
GND  
D12  
Ground pin  
Two MOSFET common drain connection pin  
BATT- Connect to negative of charger or load  
CS  
D12  
VCC  
Input pin for current sense, charger detect  
Two MOSFET commn drain connection pin  
Power supply, throuh a resistor (R1)  
SOT-23-6  
Top View  
VCC  
D12  
CS  
6
5
4
Top Point and Unde：Lot No.  
Bottom Point：Year  
1
2
3
W : week, AZ  
A：Serial
GND  
D12  
BATT-  
Pin No. Symbol  
Description  
2
3
4
5
6
NC  
NC  
GND  
pin  
BATT- nect to negative of charr or ad  
VCC  
CS  
Powesupply, through a rsistor (R1)  
Input pin for current se, charger detect  
Tow MOSFmon drain connection pin  
D12  
DW01MXAB001  
X：Seial Code, A~D  
A：Year.  
B：Week Code, A~Z & A ~ Z  
001 :Serial number  
Rev. 1.9  
/17  
DW01M  
7. Functional Block Diagram  
8. Typical Appon Circuit  
Symbol  
R1  
Purpose  
ESD protectio.  
For power fluctuation.  
Recommended  
Remakes  
100~470Ω  
Resistance should be as small as  
possible to avoid lowering of the  
overcharge detection accuracy  
caused by VDD pin current. Use  
470Ω for better ESD protection.  
C1  
R2  
or power fluctuation.  
Proection for reverse  
connection of a  
charger.  
0.1μF  
1k~2kΩ  
Select a resistance as large as  
possible to prevent large current  
when a charge is connected in  
reverse.  
Rev. 1.9  
6/17  
DW01M  
9. Absolute Maximum Ratings  
(GND=0V, Ta=25°C unless otherwise specified)  
Item  
Symbol  
VCC  
VCS  
Rating  
GND-0.3 to GND+10  
VCC -20 to VCC +0.3  
-40 to +85  
Unit  
V
Input voltage between VCC and GND *Note1  
CS input pin voltage  
V
Operating Temperature Range  
Storage Temperature Range  
Drain-Source Voltage  
TOP  
°C  
°C  
V
TST  
-40 to +125  
20  
VDS  
Gate-Source Voltage  
VGS  
±12  
V
ID  
Continuous Drain Current3  
6
A
@TA=25℃  
ID  
Continuous Drain Current3  
Pulsed Drain Current1  
5
25  
1
@TA=70℃  
IDM  
PD  
@TA=25℃  
Total Power Dissipation (TSSOP-8)  
W
PD  
@TA=25℃  
Total Power Dissipation OT-23-6)  
Linear Derating Fac
0.5  
W
W/℃  
0.008  
Note1: DW0s a circuit that will prot from static discharge; but plese take special care that no  
excelectricity or voltage ceeds the limit of the potection circuit will be applied to it.  
Rev. 1.9  
7/17  
DW01M  
10. Electrical Characteristics  
(Ta=25°C unless otherwise specified)  
PARAMETER  
TEST CONDITIONS SYMBOL Min  
Typ  
3.0  
Max  
6.0  
UNIT  
Supply Current  
VCC=3.9V  
ICC  
IOD  
μA  
μA  
Overdischarge Current  
VCC=2.0V  
1.5  
3
DW01MC-S、  
Overcharge Protection Voltage  
Overcharge Release Voltage  
Overcharge Protection Voltage  
Overcharge Release Voltage  
VOCP  
VOCR  
VOCP  
VOCR  
4.25  
4.05  
4.21  
4.01  
4.30  
4.35  
V
V
V
V
DW01MC-T  
DW01MC-S、  
4.10  
4.28  
4.08  
4.15  
4.35  
DW01MC-T  
DW01MC-SA、  
DW01M-TA  
DW1MC-SA、  
DW01MC-TA  
Overdischarge Protection Voltage  
Overdischarge Release Volta
VOD
VODR  
2.30  
2.90  
2.40  
3.00  
3.10  
V
V
VOIP  
（VOI1）  
Overcurrent Protection Voltage  
Short Current Protetage  
120  
1
180  
mV  
V
VSIP  
（VOI2）  
VCC=3.6V  
1.00  
1.35  
1.70  
Overcharge Deime  
TOC  
TOD  
TOI1  
TOI2  
80  
40  
200  
100  
20  
ms  
ms  
ms  
μs  
Overdischame  
Overcurrent Delme (1)  
Overurrnt Delay Time (2)  
VCC=30V  
V.6V  
10  
VV  
100  
200  
Charger Detection Thresho
Voltage  
VCH  
VST  
-1.2  
-0.7  
-0.2  
1.5  
V
V
Voltage defined as  
VDD-CSI,  
VDD-VSS=0V  
Minimum operating Voltage 0V  
charging. *Note1  
MOFET  
Drain-Source Breakdown Voltage  
(BATT- to D12 / D12 to GND)  
Breakdown Voltage Temperature  
Coefficient  
V,ID=250uA  
BVDSS  
20  
V
Reence to 25℃,  
V/℃  
ΔBVDSS/ΔTj  
0.1  
ID=1mA  
VGS=3.7V,ID=1A  
VGS=2.7V,ID=1A  
VGS=3.7V,ID=1A  
VGS=2.7V,ID=1A  
50  
60  
55  
70  
mΩ  
mΩ  
Static Source-Source  
On-Resistance (BATT- to GND)  
RSS(ON)  
Static Source-Souce  
On-Resistance BATT- to GND)  
Only DW01MC-SA、TA  
55  
65  
60  
75  
mΩ  
mΩ  
Drain-Source LeakagCurrent)  
(BATT- to D12 / D12 to GND)  
Drain-Source Leakage Current  
(BATT- to D12 / D12 to GND)  
IDSS  
(Tj=25℃)  
VDS=16V,VGS=0V  
VDS=16V,VGS=0V  
1
uA  
uA  
IDSS  
(Tj=70℃)  
25  
Rev. 1.9  
8/17  
DW01M  
11. Description of Operation  
Overcurrent Protection  
In normal mode, the DW01M continuously monitors  
the discharge current by sensing the voltage of CS  
pin. If the voltage of CS pin exceeds the overcurrent  
protection voltage (VOIP) beyond the overcurrent  
delay time (TOI1) period, the overcurrent protection  
circuit operates and discharging is inhibited by  
turning off the discharge control MOSFET. The  
overcurrent condition returns to the normal mode  
when the load is released or the impedance between  
BATT+ and BATT- is larger than 500kΩ. The  
DW01M provides two overcurrent detection levels  
(.1V and 1.35V) with two overcurrent delay time  
(TOI1 and TOI2) corresponding to each overcurrent  
detection level.  
Normal Condition  
If VODP<VCC<VOCP and VCH<VCS<VOI1, M1  
and M2 are both turned on. The charging and  
discharging processes can be operated normally.  
Overcharge Protection  
When the voltage of the battery cell exceeds the  
overcharge protection voltage (VOCP) beyond the  
overcharge delay time (TOC) period, charging is  
inhibited by turning off of the charge control  
MOSFET. The overcharge condition is released in  
two cases:  
The voltage of the battery cell becomes lower than  
the overcharge release voltage (VOCR) through  
self-discharge.  
Chargetection after Overd
When ovischrge occurs, the dischacontrol  
MOSFET turns off and discharging is inhibited.  
However, charging is still pted through the  
parasitic diode of MOSFETnce he charger is  
connected to the battery ack, the DW01M  
immediately turns on ll the tming generation and  
dtection circuitry. Chaging progress is sensed if  
the voltage betwen CS and GND is below charge  
detection threshd voltage (VCH).  
The voltage of the battery cell falls below the  
overcharge protection voltage (VOCP) and a load is  
connected.  
When the battery vois above VOCP, the  
overcharge conditiorelease even a load is  
connected to the pac
Overdiotection  
When te vole battery cell goes beloe  
overischarge protection voltage (Veyond  
the overdischarge delay time (eriod,  
discharng is inhibited by turning off the discharge  
control MOFET.  
Auto wer Down recovery  
The C continues to operate even after the  
overdischarge state has been entered. The battery  
ge rising to the overdischarge release  
vtageVODR) or higher is the only required  
condition for the IC to return to the normal state.  
The default of overdische delay time is 40ms.  
Inhibition of discharging is immediately released  
when the voltage of the battery cell becomes hig
than overdischarge release voltage (VODR) thrh  
charging.  
Rev. 1.9  
9/17  
DW01M  
Protection the CS pin  
12. Design Guide  
R2 is used for latch-up protection when charger is  
connected under overdischarge condition and  
overstress protection at reverse connecting of a  
charger.  
Suppressing the Ripple and Disturbance  
from Charger  
To suppress the ripple and disturbance from charger,  
connecting R1 and C1 to VCC is recommended.  
Rev. 1.9  
10/17  
DW01M  
13. Typical Operating Characteristics  
Overdischarge Current  
Supply Current  
2.5  
2
5
4
3
2
1
0
1.5  
1
ICC  
IOD  
0.5  
0
-45℃ -35℃ -15℃ 5℃  
25℃ 45℃ 65℃ 85℃  
-45-35℃ -15℃ 5℃  
25℃ 45℃ 65℃ 85℃  
Overcharge Protection Voltage  
Overdischarge Protection Voltage  
4.305  
4.304  
4.303  
4.302  
4.301  
4.3  
2.412  
2.41  
2.408  
2.406  
04  
2.402  
2.4  
VOCP  
VODP  
4.299  
4.298  
4.297  
-45℃ -35℃ -1℃ 45℃ 65℃ 85℃  
-45℃ -35℃ -15℃ 5℃ 25℃ 45℃ 65℃ 85℃  
S-Source On-Resistance  
=3.7V,ID=1A)  
Static Souce-Souce On-Resistance  
(GS=2.7V,D=1A)  
60  
30  
20  
10  
0
70  
60  
50  
40  
30  
0
Rss(on)1  
Rss(on)2  
-45℃ -35℃ -15℃ 5℃ 25℃ 45℃ 65℃ 85℃  
-45℃ -35℃ -15℃ 5℃ 25℃ 45℃ 65℃ 85℃  
Overcurrent Protection Voltag
151.6  
151.4  
151.2  
151  
VOI1  
150.8  
150.6  
150.4  
-45℃ -35-15℃ ℃ 25℃ 45℃ 65℃ 85℃  
Rev. 1.9  
11/17  
DW01M  
14. Timing Diagram  
Overcharge Condition ÆLoad Discharging Æ Normal Condition  
Charger  
Load  
VOCP  
VOCR  
VODR  
VODP  
VCC  
VOI1  
GND  
VCH  
TOC  
TOC  
Rev. 1.9  
12/17  
DW01M  
Overdischarge Condition Æ Charging by a Charger ÆNormal Condition  
Charger  
Load  
VOCP  
VOCR  
VODR  
VODP  
VCC  
VOI2  
GND  
VCH  
TO
TOD  
Rev. 1.9  
13/17  
DW01M  
Over Current Condition Æ Normal Condition  
Charger  
Load  
VOCP  
VOCR  
VODR  
VODP  
VCC  
VOI2  
VOI1  
GND  
I1  
Rev. 1.9  
14/17  
DW01M  
15. Package Outline  
Dimension (TSSOP-8)  
Dimension (SOT-23-6)  
Rev. 1.9  
15/17  
DW01M  
Dimension (DFN-5)  
Rev. 1.9  
16/17  
DW01M  
16. Revision History  
Version Date  
Page  
All  
Description  
New release  
1.0  
1.1  
2010/09/21  
2010/10/14  
3,8  
Ordering Information add Tx - serial code for MOSFET  
Electrical Characteristics add RSS(ON) DW01Mx-T1 only  
Revise RSS(ON) 3.7V Typ：50mΩ、MAX：55mΩ  
RSS(ON) 2.7V TYP：60mΩ、MAX：70mΩ  
Add Typical Operating characteristics  
Add DW01MC-SA、DW01MC-TA  
Revise Typical Application Circuit information  
Add package DFN-5  
1.2  
2010/12/15  
3,8  
1.3  
1.4  
2011/04/13  
2011/05/19  
4
5,6  
1.5  
1.6  
1.7  
1.8  
2011/09/08  
2012/07/19  
2012/09/12  
2012/10/12  
15  
16  
16  
8
Revise PackagOutlne  
Revise Package Outline (DFN-5)  
Reve PackaOutline (DFN-5)  
Revise TOI2 Specified  
1.9  
2014/05/22  
2
Revse company address  
Rev. 1.9  
17/17  

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