MJE13005DP7 [FOSHAN]

Silicon NPN transistor in a TO-220 Plastic Package.;
MJE13005DP7
型号: MJE13005DP7
厂家: Foshan Blue Rocket Electronics Co.,Ltd.    Foshan Blue Rocket Electronics Co.,Ltd.
描述:

Silicon NPN transistor in a TO-220 Plastic Package.

文件: 总6页 (文件大小:933K)
中文:  中文翻译
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MJE13005DP7  
Rev.E Mar.-2016  
DATA SHEET  
描述 / Descriptions  
TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package.  

特征 / Features  
耐压高,开关速度快。  
High voltage capability, high speed switching.  
用途 / Applications  
用于高频电子照明电路、开关及开关电源。  
High frequency electronic lighting, switching power supply applications .  
内部等效电路 / Equivalent Circuit  
引脚排列 / Pinning  
1
2
3
PIN1Base  
PIN 2Collector  
PIN 3Emitter  
放大及印章代码 / hFE Classifications & Marking  
见印章说明。See Marking Instructions.  
http://www.fsbrec.com  
1 / 6  
MJE13005DP7  
Rev.E Mar.-2016  
DATA SHEET  
极限参数 / Absolute Maximum Ratings(Ta=25)  
参数  
Parameter  
符号  
Symbol  
VCBO  
数值  
Rating  
700  
单位  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCEO  
VEBO  
IC  
400  
9.0  
V
V
Collector Current - Continuous  
2.5  
A
PC  
2.0  
W
W
Collector Power Dissipation  
PC(Tc=25)  
60  
Tj  
Junction Temperature  
150  
Tstg  
Storage Temperature Range  
-55150  
电性能参数 / Electrical Characteristics(Ta=25)  
参数  
符号  
测试条件  
最小值 典型值 最大值 单位  
Parameter  
Collector to Base Breakdown  
Voltage  
Collector to Emitter Breakdown  
Voltage  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
VCBO  
VCEO  
IC=1mA  
IE=0  
IB=0  
700  
V
IC=10mA  
400  
9.0  
V
Emitter to Base Breakdown Voltage  
Emitter Base Cut-Off Current  
Collector Cut-Off Current  
Collector cut-off current  
VEBO  
ICBO  
ICEO  
IEBO  
hFE  
IE=1mA  
IC=0  
V
VCB=700V  
VCE=400V  
VEB=9.0V  
VCE=5.0V  
IE=0  
0.1  
0.1  
0.1  
40  
mA  
mA  
mA  
IB=0  
IC=0  
DC Current Gain  
IC=0.5A  
10  
Collector to Emitter Saturation  
Voltage  
VCE(sat)  
VBE(sat)  
fT  
IC=2.0A  
IC=2.0A  
IB=0.5A  
1.0  
1.5  
V
V
Base to Emitter Saturation Voltage  
IB=0.5A  
IC=0.2A  
VCE=10V  
f=1.0MHz  
Transition Frequency  
5.0  
MHz  
Fall time  
tf  
0.8  
5.0  
μs  
μs  
VCE=5V  
(UI9600)  
IC=0.5A  
Storage time  
ts  
http://www.fsbrec.com  
2 / 6  
MJE13005DP7  
Rev.E Mar.-2016  
DATA SHEET  
电参数曲线图 / Electrical Characteristic Curve  
SOA(DC)  
PC-TC  
hFE-Ic  
Vces-IC  
tS-Ta  
hFE-Ic  
Vbes-IC  
hFE-Ta  
http://www.fsbrec.com  
3 / 6  
MJE13005DP7  
Rev.E Mar.-2016  
DATA SHEET  
外形尺寸图 / Package Dimensions  
http://www.fsbrec.com  
4 / 6  
MJE13005DP7  
Rev.E Mar.-2016  
DATA SHEET  
印章说明 / Marking Instructions  
BR  
P7  
13005D  
****  

说明:  
BR:  

为公司代码  
13005D:  
为型号代码  
P7:    
****:  
Note:  


为规格代码  
为生产批号代码,随生产批号变化。  
BR:    
13005D:  
P7:  


Company Code  
Product Type.  
Specification Code  
****:  
Lot No. Code, code change with Lot No.  
http://www.fsbrec.com  
5 / 6  
MJE13005DP7  
Rev.E Mar.-2016  
DATA SHEET  
波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free)  
说明:  
Note:  
1、预热温度 25150℃,时间 6090sec;  
2、峰值温度 255±5℃,时间持续为 5±0.5sec;  
3、焊接制程冷却速度为 210/sec.  
1.Preheating:25~150, Time:60~90sec.  
2.Peak Temp.:255±5, Duration:5±0.5sec.  
3. Cooling Speed: 2~10/sec.  
耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions  
温度:270±5℃  
时间:10±1 sec.  
Temp.:270±5  
Time:10±1 sec  
包装规格 / Packaging SPEC.  
散件包装 / BULK  
Package Type  
Units 包装数量  
Dimension 包装尺寸 (unitmm3)  
Units/Bag  
Bags/Inner Box  
Units/Inner Box  
Inner Boxes/Outer Box  
Units/Outer Box  
封装形式  
Bag 袋  
Inner Box 盒  
Outer Box 箱  
/袋  
/盒  
/盒  
/箱  
/箱  
TO-220/F  
200  
10  
2,000  
5
10,000  
135×190  
237×172×102  
560×245×195  
套管包装 / TUBE  
Units 包装数量  
Dimension 包装尺寸 (unitmm3)  
Package Type  
Units/Tube  
封装形式  
Tubes/Inner Box  
套管/盒  
Units/Inner Box  
Inner Boxes/Outer Box Units/Outer Box  
Tube 套管  
Inner Box 盒  
Outer Box 箱  
/套管  
/盒  
/箱  
/箱  
TO-220/F  
50  
20  
1,000  
5
5,000  
532×31.4×5.5 555×164×50  
575×290×180  
使用说明 / Notices  
http://www.fsbrec.com  
6 / 6  

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