AO3162 [FREESCALE]
600V,0.034A N-Channel MOSFET; 600V ， 0.034A N沟道MOSFET
| 型号： | AO3162 |
| 厂家： | 
Freescale |
| 描述： | 600V,0.034A N-Channel MOSFET |
| 文件： | 总5页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3162
600V,0.034A N-Channel MOSFET
General Description
tage
MOSFET process that is designed to deliver high levels
The AO3162 is fabricated using an advanced high vol
applications. By providing low RDS(on)
of performance and robustness in popular AC-DC
guaranteed avalanche capability this device can be
designs.
, Ciss and Crss along with
supply
adopted quickly into new and existing offline power
Features
VDS
700V@150℃
ID (at VGS=10V)
0.034A
RDS(ON) (at VGS=10V)
< 500Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
600
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±30
TA=25°C
TA=70°C
0.034
0.028
Continuous Drain
CurrentA,F
ID
A
Pulsed Drain Current B
IDM
0.16
5
Peak diode recovery dv/dt
TA=25°C
TA=70°C
dv/dt
V/ns
W
1.39
PD
Power Dissipation A
0.89
Junction and Storage Temperature Range
TJ, TSTG
-50 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t
≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
1 / 5
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AO3162
600V,0.034A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
600
-
-
-
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
700
-
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
-
0.69
-
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=8µA
-
-
1
10
IDSS
µA
-
-
-
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
-
±100
4.1
500
-
nΑ
V
2.8
3.2
154
0.045
0.74
-
VGS=10V, ID=0.016A
VDS=40V, ID=0.016A
IS=0.016A,VGS=0V
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
-
-
-
-
-
Ω
S
VSD
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
0.034
0.16
A
ISM
-
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
-
-
4.2
0.45
0.05
28
6
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
0.6
0.07
42
-
V
14
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
-
-
-
-
-
-
-
0.1
0.03
0.05
13.8
10
0.15
0.05
0.08
20
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=0.01A
VGS=10V, VDS=300V, ID=0.01A,
15
RG=6Ω
tD(off)
tf
39.2
13
57
19
trr
IF=0.016A,dI/dt=100A/µs,VDS=300V
IF=0.016A,dI/dt=100A/µs,VDS=300V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
-
-
105
9.5
160
ns
Qrr
nC
14.3
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2 / 5
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AO3162
600V,0.034A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.04
0.025
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
VDS=40V
0.02
10V
0.015
5V
25°C
0.01
4.5V
0.005
0
VGS=4V
8
0
2
4
6
10
0
1
2
3
4
5
6
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
300
250
200
150
100
50
2.5
2
VGS=10V
VGS=10V
ID=0.016A
1.5
1
0.5
0
0
0
0.01
0.02
0.03
0.04
-75
-25
25
75
125
175
Temperature (°C)
ID (A)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.1
1
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
0.9
0.8
25°C
-100
-50
0
50
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
100
150
200
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
3 / 5
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AO3162
600V,0.034A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
100.00
VDS=400V
ID=0.01A
8
10.00
1.00
0.10
0.01
Ciss
6
Coss
4
Crss
2
0
0.00
0.03
0.06
Qg (nC)
0.09
0.12
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1
0.1
120
100
80
60
40
20
0
100µs
TJ(Max)=150°C
TA=25°C
1ms
10ms
0.1s
RDS(ON)
limited
0.01
1s
DC
10s
0.001
0.0001
TJ(Max)=150°C
TA=25°C
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
0.1
1
10
100
4 / 5
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AO3162
600V,0.034A N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgss
Qgg
10V
+
VDC
+
VDC
Q
g
s
Qggd
Vds
-
-
DUTT
Vgss
Igg
Charge
Resistive Switching Test Circuit & Waveforms
RL
VVds
Vds
90%
10%
+
DUT
Vddd
Vgss
V
D
C
Rgg
-
Vgss
Vggs
t dd(on)
t
r
t
t
t oon
too
f
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
5 / 5
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