AO3400 [FREESCALE]
N-Channel Wnhancement Mode Field Effect Transistor; N沟道Wnhancement型场效应晶体管
| 型号： | AO3400 |
| 厂家： | 
Freescale |
| 描述： | N-Channel Wnhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3400
N-Channel Wnhancement Mode Field
Effect Transistor
General Description
DS(ON) , low gate charge and
device is suitable for use as a load switch or in PWM
(meets ROHS & Sony 259 specifications). AO3400L
The AO3400 uses advanced trench technology to provide excellent R
operation with gate voltages as low as 2.5V. This
applications.
Standard Product AO3400 is Pb-free
is a Green Product ordering option. AO3400 and AO3400L are electrically identical.
Product Summary
VDS (V) = 30V
ID = 5.8 A (VGS = 10V)
RDS(ON) < 28mΩ (VGS = 10V)
R
DS(ON) < 33mΩ (VGS = 4.5V)
DS(ON) < 52mΩ (VGS = 2.5V)
R
TO-236
(SOT-23)
Top View
D
G
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
30
±12
V
V
VGS
TA=25°C
TA=70°C
5.8
ID
4.9
A
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
65
85
Max
90
125
60
Units
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
43
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AO3400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±12V
VDS=VGS ID=250µA
GS=4.5V, VDS=5V
100
1.4
nA
V
VGS(th)
ID(ON)
0.7
30
1.1
V
A
VGS=10V, ID=5.8A
22.8
32
28
39
33
52
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
27.3
43.3
15
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=5A
10
S
V
A
IS=1A,VGS=0V
0.71
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
823
99
1030
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
77
VGS=0V, VDS=0V, f=1MHz
1.2
3.6
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.7
1.6
3.1
3.3
4.8
26.3
4.1
16
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=5.8A
5
7
VGS=10V, VDS=15V, RL=2.7Ω,
RGEN=3Ω
tD(off)
tf
40
6
trr
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
20
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
8.9
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
16
12
8
25
20
15
10
5
10V
3V
4.5V
VDS=5V
2.5V
125°C
25°C
VGS=2V
4
0
0
0
1
2
3
4
5
0
0.5
1
1.5
VGS(Volts)
2
2.5
3
VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
60
1.8
50
40
30
20
10
1.6
1.4
1.2
1
VGS=4.5V
V
GS=2.5V
VGS=10V
VGS=4.5V
VGS=2.5V
VGS=10V
0.8
0
5
10
ID (A)
15
20
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
60
50
40
30
20
10
ID=5A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
4
3
2
1
0
VDS=15V
ID=5A
1200
1000
800
600
400
200
0
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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