AO3400A [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AO3400A |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3400A
30V N-Channel MOSFET
General Description
technology with a low resistance package to provide
The AO3400A combines advanced trench MOSFET
extremely low RDS(ON)
. This device is suitable for use as a load switch or in PWM applications.
Features
I
VDS
30V
(at VGS=10V)
5.7A
D
DS(ON) (at VGS=10V)
DS(ON) (at VGS = 4.5V)
DS(ON) (at VGS = 2.5V)
< 26.5mΩ
< 32mΩ
< 48mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±12
TA=25°C
TA=70°C
5.7
Continuous Drain
Current
ID
4.7
A
Pulsed Drain Current C
IDM
PD
30
1.4
TA=25°C
TA=70°C
W
°C
Power Dissipation B
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
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AO3400A
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=5.7A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
nA
V
VGS(th)
ID(ON)
0.65
30
1.05
1.45
A
18
28
19
24
33
0.7
26.5
38
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=3A
VDS=5V, ID=5.7A
IS=1A,VGS=0V
32
mΩ
mΩ
S
48
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
630
75
50
3
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.5
4.5
7
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6
1.3
1.8
3
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=5.7A
VGS=10V, VDS=15V, RL=2.6Ω,
RGEN=3Ω
2.5
25
4
tD(off)
tf
trr
IF=5.7A, dI/dt=100A/µs
IF=5.7A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8.5
2.6
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO3400A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
15
10V
3V
4.5V
35
30
25
20
15
10
5
VDS=5V
12
2.5V
9
6
3
0
25°C
125°C
VGS=2V
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
30
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=5A
25
20
15
10
VGS=4.5V
=10V
VGS
I =5.7A
D
VGS=10V
0.8
0
25
50
75
100
125
150
175
0
5
10
ID (A)
15
20
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
40
30
20
10
1.0E+01
ID=5.7A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
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AO3400A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1000
VDS=15V
ID=5.7A
800
Ciss
600
400
Coss
200
Crss
0
0
2
4
6
8
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
10s
TA=25°C
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=125°C/W
PD
0.01
0.001
Single Pulse
0.001
Ton
T
0.00001
0.0001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
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AO3400A
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Q
Qgd
V
VDC
-
-
D
Vgs
IIg
C
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
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