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AO8807 [FREESCALE]

Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
AO8807
型号： AO8807
厂家： Freescale    Freescale
描述：

Dual P-Channel Enhancement Mode Field Effect Transistor
双P沟道增强型场效应晶体管

晶体 晶体管 场效应晶体管
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中文：  中文翻译
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AO8807  
Dual P-Channel Enhancement Mode Field  
Effect Transistor  
General Description  
The AO8807 uses advanced trench technology to  
provide excellent R  
DS(ON) , low gate charge and  
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807  
and AO8807L are electrically identical.  
- RoHS Compliant  
-Halogen Free  
Features  
VDS (V) = -12V  
ID = -6.5 A (VGS = -4.5V)  
RDS(ON) < 20mΩ (VGS = -4.5V)  
RDS(ON) < 24mΩ (VGS = -2.5V)  
RDS(ON) < 30mΩ (VGS = -1.8V)  
D1  
D2  
TSSOP-8  
Top View  
D2  
S2  
S2  
G2  
1
2
3
4
8
7
6
5
D1  
S1  
S1  
G1  
Rg  
Rg  
G1  
G2  
S1  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-12  
V
VGS  
Gate-Source Voltage  
±8  
-6.5  
V
A
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
ID  
-5  
IDM  
-60  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation B  
0.9  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
73  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t ≤ 10s  
RθJA  
Maximum Junction-to-Ambient AD  
Maximum Junction-to-Lead  
96  
125  
75  
Steady-State  
Steady-State  
RθJL  
63  
1 / 5  
www.freescale.net.cn  
AO8807  
Dual P-Channel Enhancement Mode Field  
Effect Transistor  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=-250µA, VGS=0V  
-12  
V
VDS=-12V, VGS=0V  
-1  
-5  
IDSS  
Zero Gate Voltage Drain Current  
µA  
µA  
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
VDS=0V, VGS=±8V  
±10  
VGS(th)  
ID(ON)  
VDS=VGS ID=-250µA  
-0.35 -0.53 -0.85  
-60  
V
GS=-4.5V, VDS=-5V  
A
VGS=-4.5V, ID=-6.5A  
16  
23  
20  
28  
24  
30  
36  
mΩ  
TJ=125°C  
mΩ  
mΩ  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
V
GS=-2.5V, ID=-6A  
19  
VGS=-1.8V, ID=-5.5A  
VGS=-1.5V, ID=-5A  
VDS=-5V, ID=-6.5A  
IS=-1A,VGS=0V  
23  
28  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
45  
S
V
A
-0.56  
-1  
Maximum Body-Diode Continuous Current  
-1.4  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
1740  
334  
200  
1.3  
2100  
pF  
pF  
VGS=0V, VDS=-6V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
pF  
kΩ  
V
V
GS=0V, VDS=0V, f=1MHz  
1.7  
23  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
19  
4.5  
5.3  
240  
580  
7
nC  
nC  
nC  
ns  
GS=-4.5V, VDS=-6V, ID=-6.5A  
V
GS=-4.5V, VDS=-6V, RL=0.9Ω,  
ns  
µs  
RGEN=3Ω  
tD(off)  
tf  
µs  
4.2  
22  
trr  
IF=-6.5A, dI/dt=100A/µs  
IF=-6.5A, dI/dt=100A/µs  
27  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
17  
nC  
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value  
in any given application depends on the user's specific board design.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initialTJ=25°C.  
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with  
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
2 / 5  
www.freescale.net.cn  
AO8807  
Dual P-Channel Enhancement Mode Field  
Effect Transistor  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
VDS=-5V  
-4.5V  
-2.5V  
-3V  
-2V  
125°C  
VGS=-1.5V  
25°C  
0
1
2
3
4
5
0
0.5  
1
1.5  
2
2.5  
3
-VGS(Volts)  
-VDS (Volts)  
Figure 2: Transfer Characteristics(Note E)  
Figure 1: On-Region Characteristics(Note E)  
45  
40  
35  
30  
25  
20  
15  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
ID=-6A, VGS=-2.5V  
VGS=-1.5V  
ID=-6.5A, VGS=-4.5V  
VGS=-2.5V  
VGS=-1.8V  
ID=-5A, VGS=-1.5V  
ID=-5.5A, VGS=-1.8V  
VGS=-4.5V  
0
2
4
6
8
10 12 14 16 18 20  
-ID (A)  
0
25  
50  
75  
100  
125  
150  
175  
Temperature (°C)  
Figure 4: On-Resistance vs. Junction  
Temperature(Note E)  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage(Note E)  
50  
1E+01  
1E+00  
1E-01  
1E-02  
1E-03  
1E-04  
1E-05  
ID=-6.5A  
45  
40  
35  
30  
25  
20  
15  
10  
125°C  
25°C  
125°C  
25°C  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
-VSD (Volts)  
-VGS (Volts)  
Figure 6: Body-Diode Characteristics(Note E)  
Figure 5: On-Resistance vs. Gate-Source  
Voltage(Note E)  
3 / 5  
www.freescale.net.cn  
AO8807  
Dual P-Channel Enhancement Mode Field  
Effect Transistor  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
2800  
2400  
4.5  
4
VDS=-6V  
ID=-6.5A  
Ciss  
3.5  
3
2000  
1600  
1200  
800  
400  
0
2.5  
2
1.5  
1
Coss  
0.5  
0
Crss  
0
4
8
12  
-Qg (nC)  
Figure 7: Gate-Charge Characteristics  
16  
20  
0
2
4
6
8
10  
12  
-VDS (Volts)  
Figure 8: Capacitance Characteristics  
100  
10  
1
80  
60  
40  
20  
0
TJ(Max)=150°C  
TA=25°C  
10µs  
RDS(ON)  
limited  
100µs  
1ms  
10s  
0.1s  
1s  
0
DC  
TJ(Max)=150°C  
TA=25°C  
0
0.0001 0.001  
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
Pulse Width (s)  
V
DS (Volts)  
Figure 9: Maximum Forward Biased Safe  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note F)  
Operating Area (Note F)  
10  
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=125°C/W  
1
0.1  
PD  
Ton  
T
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)  
4 / 5  
www.freescale.net.cn  
AO8807  
Dual P-Channel Enhancement Mode Field  
Effect Transistor  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
-
-10V  
-
VDC  
Qgs  
Qgd  
+
Vds  
VDC  
+
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
10%  
-
DUT  
Vdd  
Vgs  
VDC  
+
Rg  
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
DUT  
Vgs  
trr  
Vds -  
L
-Isd  
-IF  
Isd  
Vgs  
dI/dt  
-IRM  
+
Vdd  
VDC  
Vdd  
-
-Vds  
Ig  
5 / 5  
www.freescale.net.cn  

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