AOB482L [FREESCALE]
80V N-Channel MOSFET; 80V N沟道MOSFET
| 型号： | AOB482L |
| 厂家： | 
Freescale |
| 描述： | 80V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：544K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT482L/AOB482L
80V N-Channel MOSFET
General Description
TM trench technology that combines excellent RDS(ON) with low
efficiency with controlled switching behavior. This
switching and general purpose applications.
The AOT482L/AOB482L is fabricated with SDMOS
gate charge and low Q .The result is outstanding
rr
universal technology is well suited for PWM, load
Features
VDS
80V
105A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
< 7.2mΩ
< 9mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
80
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
±25
VGS
Continuous Drain
Current G
Pulsed Drain Current C
TC=25°C
105
82
ID
TC=100°C
A
IDM
330
11
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
IDSM
A
9
IAS, IAR
82
A
Avalanche energy L=0.1mH C
EAS, EAR
336
333
167
2.1
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
TA=25°C
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
11
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
47
60
Steady-State
Steady-State
RθJC
0.36
0.45
1/7
www.freescale.net.cn
AOT482L/AOB482L
80V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
80
V
VDS=80V, VGS=0V
10
µA
50
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±25V
100
3.7
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220
2.5
3.1
330
A
5.9
11
7.2
13
mΩ
TJ=125°C
VGS=7V, ID=20A
TO220
6.8
5.6
9
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO263
6.9
8.7
VGS=7V, ID=20A
TO263
6.5
50
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.64
1
V
105
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3240 4054 4870
pF
pF
pF
Ω
VGS=0V, VDS=40V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
320
95
458
160
0.45
600
225
0.7
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=40V, ID=20A
0.2
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
53
16
12
66.8
20.8
20.2
26
81
25
30
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
18
tD(off)
tf
Turn-Off DelayTime
48
Turn-Off Fall Time
21
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
18
75
26
34
ns
Qrr
nC
108
140
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/7
www.freescale.net.cn
AOT482L/AOB482L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
VDS=5V
7V
6V
5.5V
125°C
VGS=5V
25°C
3
4
5
6
7
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
12
10
8
2.4
2.2
2
VGS=10V
ID=20A
VGS=7V
1.8
1.6
1.4
1.2
1
6
VGS=10V
VGS=7V
ID=20A
4
0.8
2
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
16
14
12
10
8
1.0E+02
ID=20A
1.0E+01
125°C
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
25°C
6
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
3/7
www.freescale.net.cn
AOT482L/AOB482L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6000
5000
4000
3000
2000
1000
0
10
VDS=40V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
40
50
60
70
0
10
20
30
V
40
50
60
70
80
Qg (nC)
DS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
5000
4000
3000
2000
1000
0
1000.0
100.0
10.0
1.0
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100µs
1ms
DC
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
1E-05 0.0001 0.001 0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.00001 0.0001
0.000001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/7
www.freescale.net.cn
AOT482L/AOB482L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
350
300
250
200
150
100
50
TA=25°C
TA=100°C
TA=125°C
TA=150°C
1
0
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability
(Note C)
Figure 13: Power De-rating (Note F)
1000
100
10
120
100
80
60
40
20
0
TA=25°C
1
0.01
1
100
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/7
www.freescale.net.cn
AOT482L/AOB482L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
240
200
160
120
80
50
45
40
35
30
25
20
15
10
5
35
3
di/dt=800A/µs
30
125ºC
di/dt=800A/µs
2.5
2
125ºC
25
trr
Qrr
20
25ºC
25ºC
1.5
1
15
125ºC
25ºC
10
S
Irm
40
25ºC
0.5
0
5
125º
0
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IS (A)
IS (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
250
200
150
100
50
50
40
30
20
10
0
50
40
30
20
10
0
2.5
2
Is=20A
Is=20A
125ºC
125ºC
1.5
1
trr
25ºC
125ºC
25ºC
Qrr
25ºC
S
0.5
Irm
25ºC
125ºC
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
6/7
www.freescale.net.cn
AOT482L/AOB482L
80V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
7/7
www.freescale.net.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明