AOD413A [FREESCALE]
40V P-Channel MOSFET; 40V P沟道MOSFET
| 型号： | AOD413A |
| 厂家： | 
Freescale |
| 描述： | 40V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：494K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD413A
40V P-Channel MOSFET
General Description
The AOD413A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high
current load applications.
Features
VDS (V) = -40V
ID = -12A
(VGS = -10V)
RDS(ON) < 44mΩ (VGS = -10V)
RDS(ON) < 66mΩ (VGS = -4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
Continuous Drain
Current B,H
Pulsed Drain Current C
Avalanche Current C
VGS
±20
-12
V
TC=25°C
TC=100°C
ID
-12
A
IDM
IAR
EAR
-30
-20
Repetitive avalanche energy L=0.1mH C
20
mJ
W
°C
TC=25°C
50
PD
Power Dissipation B
TC=100°C
25
TA=25°C
2.5
PDSM
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
t ≤ 10s
25
50
3
RθJA
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case F
Steady-State
Steady-State
RθJC
2
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AOD413A
40V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID= -250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-40
V
VDS= -40V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID= -250µA
VGS= -10V, VDS= -5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
-30
-2
A
V
GS= -10V, ID= -12A
36
52
44
65
66
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS= -4.5V, ID= -8A
VDS= -5V, ID= -12A
IS= -1A,VGS=0V
52
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
22
S
V
A
-0.76
-1
Maximum Body-Diode Continuous Current
-12
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
900
97
1125
pF
pF
pF
Ω
VGS=0V, VDS= -20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
68
VGS=0V, VDS=0V, f=1MHz
14
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
16.2
7.2
21
nC
nC
nC
nC
ns
VGS= -10V, VDS= -20V,
ID= -12A
9.4
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.8
3.5
6.2
VGS= -10V, VDS= -20V, RL=1.6Ω,
RGEN=3Ω
8.4
ns
tD(off)
tf
44.8
41.2
21.2
13.8
ns
ns
trr
IF= -12A, dI/dt=100A/µs
IF= -12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April 2011
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AOD413A
40V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
VDS= -5V
-4.5V
-10V
25
20
15
25
20
15
10
5
-4.0V
-3.5V
10
125°C
5
VGS= -2.5V
3
25°C
0
0
0
1
2
4
5
1.5
2
2.5
3
3.5
4
4.5
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
70
65
60
55
50
45
40
35
30
1.8
1.6
1.4
1.2
1
VGS= -10V
I= -12A
VGS= -4.5V
VGS= -4.5V
ID= -8A
VGS= -10V
0.8
0.6
0
5
10
15
20
-60 -30
0
30
60
90 120 150 180
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
120
100
80
100
10
ID= -12A
1
0.1
125°C
125°C
25°C
25°C
0.01
60
0.001
0.0001
0.00001
40
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-vSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
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AOD413A
40V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
1000
10
8
VDS= -20V
ID= -12A
Ciss
800
600
400
200
0
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
14
16
18
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
1000
100
100
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µs
10
1
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
10
0.1
1
10
100
0.00001 0.0001
0.001
0.01
0.1
1
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=3°C/W
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOD413A
40V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
20
15
10
5
0
0
25
50
75
CASE (°C)
Figure 12: Power De-rating (Note B)
100
125
150
175
0
25
50
75
100
125
150
175
T
TCASE (°C)
Figure 13: Current De-rating (Note B)
1000
100
10
TJ(Max)=150°C
TA=25°C
1
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
Single Pulse
0.0001
T
R
θJA=50°C/W
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
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AOD413A
40V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
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