AOD4189 [FREESCALE]
P-Channel Enhancement Mode Field; P沟道增强型场
| 型号： | AOD4189 |
| 厂家： | 
Freescale |
| 描述： | P-Channel Enhancement Mode Field |
| 文件： | 总6页 (文件大小：554K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
General Description
design to provide excellent RDS(ON) with low gate
DPAK package, this device is well suited for high
The AOD4189 uses advanced trench technology and
charge. With the excellent thermal resistance of the
current load applications.
Features
VDS (V) = -40V
ID = -40A
RDS(ON) < 22mΩ (VGS = -10V)
DS(ON) < 29mΩ (VGS = -4.5V)
(VGS = -10V)
R
D
G
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
Continuous Drain
Current B,H
Pulsed Drain CurrentC
Avalanche Current C
VGS
±20
-40
V
TC=25°C
TC=100°C
ID
-28
A
IDM
IAR
EAR
-50
-35
Repetitive avalanche energy L=0.1mHC
61
mJ
W
°C
TC=25°C
62.5
31
PD
Power Dissipation B
TC=100°C
TA=25°C
2.5
PDSM
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
15
41
2
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case D,F
Steady-State
Steady-State
50
RθJC
2.4
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AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-40
V
V
DS=-40V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
VGS(th)
ID(ON)
-1.7
-50
-1.9
A
18
27
22
33
29
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=-4.5V, ID=-8A
VDS=-5V, ID=-12A
IS=-1A,VGS=0V
23
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
35
S
V
A
-0.74
-1
Maximum Body-Diode Continuous Current
-20
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1870
185
155
4.5
pF
pF
pF
Ω
V
GS=0V, VDS=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
2.5
6.5
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
31.4
7.9
7.6
6.2
10
41
10
nC
V
GS=-10V, VDS=-20V,
ID=-12A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
nC
nC
ns
ns
ns
ns
V
GS=-10V, VDS=-20V, RL=1.6Ω,
18
RGEN=3Ω
tD(off)
tf
38
24
trr
IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
32
42
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
30
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using t ≤300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Oct 2008
2/6
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AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
40
30
20
10
0
VDS=-5V
-10V
-4.5V
-6.0V
-4.0V
40
30
20
10
0
VGS=-3.5V
125°C
25°C
3.5
1.5
2
2.5
3
4
4.5
0
1
2
3
4
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30
2
28
26
24
22
20
18
16
VGS=-10V
ID=-12A
1.8
1.6
1.4
1.2
1
VGS=-4.5V
VGS=-4.5V
ID=-8A
VGS=-10V
0.8
0
10
20
30
40
-50 -25
0
25 50 75 100 125 150 175 200
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
100
55
50
45
40
35
30
25
20
15
ID=-12A
10
1
0.1
125°C
125°C
25°C
0.01
25°C
0.001
0.0001
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-VSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
3/6
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AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
10
8
VDS=-20V
ID=-12A
2400
2000
1600
1200
800
400
0
Ciss
6
4
Crss
2
Coss
15
0
0
5
10
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
25
30
35
40
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
35
10000
1000
100
100
TJ(Max)=175°C
TC=25°C
100µs
10
RDS(ON)
limited
1ms
TJ(Max)=175°C
TC=25°C
10ms
DC
1
10
1
10
100
0.00001 0.0001
0.001
0.01
0.1
1
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.4°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
100
60
50
40
10
30
20
10
1
0
0.01
0.1
1
10
Time in Avalache, tA (s)
Figure 12: Single Pulse Avalanche Capability
100
1000
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
10000
1000
100
10
50
TJ(Max)=150°C
TA=25°C
40
30
20
10
0
1
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
1E-04 0.001 0.01
0.1
1
10
100 1000
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001 0.01
0.001
0.00001
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
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AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
f
td(off)
td(on)
t
r
Vgs
-
90%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vds
-
BVDSS
Vgs
Vdd
Vgs
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
6/6
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