AOD421 [AOS]
P-Channel Enhancement Mode Field Effect Transisto; P沟道增强型场效应Transisto
| 型号： | AOD421 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transisto |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD421
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD421 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for load switching. It is ESD
protected. Standard Product AOD421 is Pb-free
(meets ROHS & Sony 259 specifications). AOD421L
is a Green Product ordering option. AOD421 and
AOD421L are electrically identical.
VDS (V) = -20V
ID = -12.5 A (VGS = -10V)
RDS(ON) < 75mΩ (VGS = -10V)
RDS(ON) < 95mΩ (VGS = -4.5V)
RDS(ON) < 145mΩ (VGS = -2.5V)
ESD Rating: 2000V HBM
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±12
-12.5
-8.9
V
A
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
-30
TC=25°C
TC=100°C
TA=25°C
TA=70°C
18.8
9.4
PD
W
Power Dissipation B
Power Dissipation A
2
PDSM
W
1.33
-55 to 175
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
23
50
6
28
60
8
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
RθJC
Alpha & Omega Semiconductor, Ltd.
AOD421
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-16V, VGS=0V
-0.5
µΑ
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
-2.5
µA
µA
VDS=0V, VGS=±10V
DS=0V, VGS=±12V
VDS=VGS ID=-250µA
±1
IGSS
Gate-Body leakage current
V
±10
-1.4
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
-0.7
-15
-0.9
V
A
V
GS=-4.5V, VDS=-5V
GS=-10V, ID=-12.5A
V
61
83
75
105
95
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
V
GS=-4.5V, ID=-3A
GS=-2.5V, ID=-1A
75
V
110
8.8
145
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-12.5A
IS=-1A,VGS=0V
S
V
A
-1
-0.81
Maximum Body-Diode Continuous Current
-8.5
620
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
512
77
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
62
VGS=0V, VDS=0V, f=1MHz
9.2
13
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.6
0.9
2.1
5.2
38
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V,
ID=-12.5A
VGS=-10V, VDS=-10V, RL=0.75Ω,
RGEN=3Ω
tD(off)
tf
17
31
trr
IF=-12.5A, dI/dt=100A/µs
IF=-12.5A, dI/dt=100A/µs
19
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
6.3
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
I. Revision 0: July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
40
35
30
25
20
15
10
5
-10.0V
VDS=-5V
8
-5.0V
-4.0V
6
-3.0V
-2.5V
4
125°C
-2.0V
2
25°C
VGS=-1.5V
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
160
140
120
100
80
1.6
1.4
1.2
1.0
0.8
ID=-3A, VGS=-4.5V
VGS=-2.5V
VGS=-4.5V
ID=-12.5A, VGS=-10V
ID=-1A, VGS=-2.5V
60
VGS=-10V
40
20
0
2
4
6
8
10
12
14
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
180
160
140
120
100
80
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
ID=-12.5A
125°C
125°C
25°C
60
25°C
40
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
4
3
2
1
0
ID=-12.5A
Ciss
600
400
200
0
Coss
Crss
0
1
2
3
4
5
6
0
5
10
15
20
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
100
90
80
70
60
50
40
30
20
10
0
TJ(Max)=175C, TA=25°C
TJ(Max)=175°C
TA=25°C
10µs
100µs
DC
1ms
RDS(ON)
limited
0.0001 0.001
0.01
0.1
1
10
100
0.1
Pulse Width (s)
0.1
1
10
100
Figure 10: Single Pulse Power Rating Junction-to-
case (Note F)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
18
16
14
12
10
8
14
12
10
8
6
4
6
4
2
2
0
0
0
25
50
75
TCASE (°C)
Figure 12: Current De-rating (Note B)
100
125
150
175
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
10
1
50
TJ(Max)=150°C, TA=25°C
TA=25°C
10µs
40
30
20
10
0
100µs
1ms
100m
1s
10s
DC
RDS(ON)
limited
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Maximum Forward Biased Safe
Operating Area (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
T
1
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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