AOI514 [FREESCALE]
30V N-Channel AlphaMOS; 30V N通道AlphaMOS
| 型号： | AOI514 |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel AlphaMOS |
| 文件： | 总6页 (文件大小：397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD514/AOI514/AOY514
30V N-Channel AlphaMOS
General Description
• Latest Trench Power MOSFET technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Features
VDS
30V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
46A
< 5.9mΩ
< 11.9mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
30
±20
46
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
36
A
Pulsed Drain Current C
IDM
163
17
TA=25°C
TA=70°C
Continuous Drain
Current
IDSM
A
13
Avalanche Current C
Avalanche energy L=0.1mH C
IAS
25
A
mJ
V
EAS
31
VDS Spike
100ns
VSPIKE
36
TC=25°C
TC=100°C
TA=25°C
TA=70°C
50
PD
W
Power Dissipation B
Power Dissipation A
25
2.5
PDSM
W
°C
1.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
41
RθJC
2.5
1/6
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AOD514/AOI514/AOY514
30V N-Channel AlphaMOS
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS，ID=250µA
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
100
2.4
nA
V
VGS(th)
1.6
2
4.3
5.4
8.5
91
5.9
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
7.5
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
11.9
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current G
46
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1187
483
60
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.7
1.5
2.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
18
8.8
4.1
3.6
7.3
10.5
21.8
5
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14.7
24
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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AOD514/AOI514/AOY514
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
4.5V
7V
VDS=5V
5V
4V
125°C
25°C
VGS=3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
12
10
8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=20A
6
4
VGS=10V
VGS=4.5V
ID=20A
2
0.8
0
0
25
50
75
100 125 150 175 200
0
5
10
15
ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
12
9
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
6
25°C
3
25°C
0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
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AOD514/AOI514/AOY514
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
1600
1400
1200
1000
800
600
400
200
0
Ciss
6
4
2
0
0
5
10
15
20
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
300
200
100
0
1000.0
100.0
10.0
1.0
10µs
RDS(ON)
100µs
1ms
DC
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
0.1
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/6
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AOD514/AOI514/AOY514
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
1000
100
10
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T=T+P.Z.R
TJ,PK=TA+PDM.ZθJA.RθJA
R
θJA=50°C/W
0.1
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOD514/AOI514/AOY514
30V N-Channel AlphaMOS
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
IRM
+
Vdd
VDC
Vdd
-
Vds
6/6
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