AOL1401 [FREESCALE]
P-Channel Enhancement Mode Field; P沟道增强型场
| 型号： | AOL1401 |
| 厂家： | 
Freescale |
| 描述： | P-Channel Enhancement Mode Field |
| 文件： | 总6页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1401
P-Channel Enhancement Mode Field
Effect Transistor
General Description
provide excellent RDS(ON), and ultra-low low gate
The AOL1401 uses advanced trench technology to
charge with a 25V gate rating. This device is suitable
ESD protected.
for use as a load switch or in PWM applications. It is
Features
VDS (V) = -38V
ID = -85A
R
DS(ON) < 8.5mΩ (VGS = -20V)
RDS(ON) < 10mΩ (VGS = -10V)
Ultra SO-8TM Top View
D
Bottom tab
connected to
drain
D
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-38
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±25
-85
V
TC=25°C
TC=100°C
ID
-62
Pulsed Drain Current C
IDM
A
-120
-12
Continuous Drain
Current G
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
IDSM
PD
-10
100
W
Power Dissipation B
50
2.08
1.3
PDSM
W
Power Dissipation A
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
21
48
1
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
60
Steady-State
Steady-State
RθJC
1.5
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AOL1401
P-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-38
V
VDS=-30V, VGS=0V
-100
-500
±1
IDSS
Zero Gate Voltage Drain Current
nA
TJ=55°C
µA
µA
V
DS=0V, VGS=±20V
DS=0V, VGS=±25V
IGSS
Gate-Body leakage current
V
±10
-3.5
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-20A
-1.5
-2.2
V
A
-120
6.8
9.1
7.9
50
8.5
11
10
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-10V, ID=-20A
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.71
-1
Maximum Body-Diode Continuous Current
14.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3800 4560
pF
pF
pF
Ω
V
GS=0V, VDS=-20V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
560
350
V
7.5
9
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge (10V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
61.2
11.88
15.4
13.5
17
74
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-20V, ID=-20A
VGS=-10V, VDS=-20V, RL=1Ω,
RGEN=3Ω
tD(off)
tf
97
43
trr
IF=-20A, dI/dt=100A/µs
IF=-20A, dI/dt=100A/µs
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
36
ns
Qrr
29
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev 2: Dec 2008
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AOL1401
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
30
25
20
15
10
5
-14V
-10V
VDS=-5V
-6V
125°C
-4V
25°C
Vgs=-3.5V
0
0
1
2
3
4
5
2
2.5
3
3.5
4
4.5
5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
9
8
7
6
1.8
1.6
1.4
1.2
1
VGS=-20V
ID=-20A
VGS=-10V
VGS=-10V
ID=-20A
VGS=-20V
0.8
0
5
10
15
20
25
-ID (A)
0
30
60
90
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
120
150
180
210
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
30
25
20
15
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-20A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
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AOL1401
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
Ciss
VDS=-20V
ID=-20A
8
4000
3000
2000
1000
0
6
4
Coss
Crss
2
0
0
5
10
15
-VDS (Volts)
20
25
30
0
10
20
30
40
50
60
70
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
1000
800
600
400
200
0
TJ(Max)=175°C, TA=25°C
10µs
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
100m
DC
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note B)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOL1401
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
120
50
90
40
30
20
10
0
60
30
0
TA=25°C
0
25
50
75
TCASE (°C)
Figure 12: Power De-rating (Note B)
100
125
150
175
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-
Ambient (Note H)
100
80
60
40
20
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
100
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
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AOL1401
P-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
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