AON4805L [FREESCALE]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | AON4805L |
| 厂家： | 
Freescale |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4805L
Dual P-Channel Enhancement Mode
Field Effect Transistor
General Description
DS(ON)
The AON4805L uses advanced trench technology to provide excellent R
, low gate charge and
operation with gate voltage as low as 1.8V. This
applications.
device is suitable for use as a load switch or in PWM
-RoHS Compliant
-Halogen Free
Features
VDS (V) = -20V
ID = -4.5A
RDS(ON) < 65mΩ (VGS = -4.5V)
DS(ON) < 85mΩ (VGS = -2.5V)
(VGS = -4.5V)
R
RDS(ON) < 115mΩ (VGS = -1.8V)
DFN 3x2
Pin 1
Top View
Bottom View
D2
S2
D1
S1
1
2
3
4
8
7
6
5
S1
G1
S2
G2
D1
D1
D2
D2
G2
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
MOSFET
Units
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
-20
±8
V
V
VGS
TA=25°C
TA=70°C
-4.5
Continuous Drain
Current
Pulsed Drain Current C
ID
-3.5
A
IDM
-25
TA=25°C
TA=70°C
2
PD
W
Power Dissipation B
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
50
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
60
100
34
t ≤ 10s
RθJA
Maximum Junction-to-Ambient AD
Maximum Junction-to-Lead
84
Steady-State
Steady-State
RθJL
28
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AON4805L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-20V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-4.5A
±100
-1
nA
V
VGS(th)
ID(ON)
-0.5
-25
-0.67
A
53
72
65
90
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
VGS=-2.5V, ID=-3A
VGS=-1.8V, ID=-2A
VDS=-5V, ID=-4.5A
IS=-1A,VGS=0V
66
85
88
115
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
15
-0.7
-1
V
Maximum Body-Diode Continuous Current
-1.7
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
560
80
670
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
VGS=0V, VDS=0V, f=1MHz
15
23
10
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.5
1.2
2.1
7.2
36
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-4.5A
VGS=-4.5V, VDS=-10V, RL=2.2Ω,
RGEN=6Ω
tD(off)
tf
53
56
trr
IF=-4.5A, dI/dt=100A/µs
IF=-4.5A, dI/dt=100A/µs
37
45
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
27
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C: Ratings are based on low frequency and duty cycles to keep initialT J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
2
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev0 : July 2008
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AON4805L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
20
15
10
5
VDS=-5V
-3.0V
-4.5V
-2.5V
-2.0V
VGS=-1.5V
125°C
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
-VGS(Volts)
2
2.5
3
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
Figure 2: Transfer Characteristics(Note E)
1.6
1.4
1.2
1
VGS=-4.5V
ID=-4.5A
140
120
100
80
VGS=-1.8V
VGS=-2.5V
ID=-3A
VGS=-1.8V
ID=-2A
VGS=-2.5V
VGS=-4.5V
60
40
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
180
160
140
120
100
80
1E+02
1E+01
ID=-4.5A
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
25°C
125°C
60
25°C
40
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
-VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
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AON4805L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
1200
1000
800
600
400
200
0
VDS=-10V
ID=-4.5A
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
1000
100
10
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µ
1ms
10ms
0.1s
1s
1
0.10
DC
TJ(Max)=150°C
TA=25°C
0.1
0.01
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AON4805L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
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