AON6458 [FREESCALE]
250V,14A N-Channel MOSFET; 250V ， 14A N沟道MOSFET
| 型号： | AON6458 |
| 厂家： | 
Freescale |
| 描述： | 250V,14A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：630K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6458
250V,14A N-Channel MOSFET
General Description
TheꢀAON6458ꢀisꢀfabricatedꢀusingꢀanꢀadvancedꢀhighꢀvoltage MOSFETꢀprocessꢀthatꢀisꢀdesignedꢀtoꢀdeliverꢀhighꢀlevelsꢀof
applications.ByꢀprovidingꢀlowꢀRDS(on)
,ꢀCiss
ꢀandꢀC
rssꢀalongꢀwith
performanceꢀandꢀrobustnessꢀinꢀpopularꢀACꢁDC
quicklyꢀintoꢀnewꢀandꢀexistingꢀofflineꢀpowerꢀsupply
guaranteedꢀavalancheꢀcapabilityꢀthisꢀdeviceꢀcanꢀbeꢀadopted
synchronousꢀrectifiersꢀforꢀconsumer,ꢀtelecom,ꢀindustrial
designs.Thisꢀdeviceꢀisꢀidealꢀforꢀboostꢀconvertersꢀand
powerꢀsuppliesꢀandꢀLEDꢀbacklighting.
Features
ꢀꢀꢀVDS
300V@150℃
14A
ꢀꢀꢀIDꢀꢀ(atꢀVGS=10V)
ꢀꢀꢀRDS(ON)ꢀ(atꢀVGS=10V)
<ꢀ0.17Ω
g
Top View
D
1
2
3
4
8
7
6
5
Gꢀ
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
250
Units
DrainꢁSourceꢀVoltage
GateꢁSourceꢀVoltage
VDS
V
V
VGS
±30
TC=25°C
14
ContinuousꢀDrain
CurrentB
ID
TC=100°C
8.8
A
PulsedꢀDrainꢀCurrentꢀC
IDM
42
2.2
1.7
4.5
304
TA=25°C
TA=70°C
ContinuousꢀDrain
Current
AvalancheꢀCurrentꢀC
RepetitiveꢀavalancheꢀenergyꢀC
SingleꢀpulsedꢀavalancheꢀenergyꢀH
Peakꢀdiodeꢀrecoveryꢀdv/dt
TC=25°C
IDSM
A
IAR
A
EAR
EAS
dv/dt
mJ
608
5
mJ
V/ns
W
83
PD
PowerꢀDissipationꢀB
33
2
TC=100°C
W
W
°C
TA=25°C
PDSM
PowerꢀDissipationꢀA
1.25
TA=70°C
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ50ꢀtoꢀ150
Thermal Characteristics
Parameter
Symbol
Typ
24
53
1
Max
30
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
MaximumꢀJunctionꢁtoꢁAmbientꢀAꢀD
MaximumꢀJunctionꢁtoꢁCase
tꢀꢀ≤ꢀ10s
RθJA
SteadyꢁState
SteadyꢁState
64
RθJC
1.5
1/6
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AON6458
ꢀꢀꢀꢀꢀꢀꢀꢀꢀ
250V,14A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢂA,ꢀVGS=0V,ꢀTJ=25°C
ID=250ꢂA,ꢀVGS=0V,ꢀTJ=150°C
250
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
300
V
BVDSS
/∆TJ
V/ꢀoC
ID=250ꢂA,ꢀVGS=0Vꢀꢀ
0.25
VDS=250V,ꢀVGS=0V
VDS=200V,ꢀTJ=125°C
VDS=0V,ꢀVGS=±30V
VDS=5V,ꢀID=250µA
VGS=10V,ꢀID=10A
VDS=40V,ꢀID=10A
IS=1A,VGS=0V
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
±100
4.5
nΑ
V
3.2
3.8
0.14
16
StaticꢀDrainꢁSourceꢀOnꢁResistance
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
0.17
Ω
S
VSD
0.72
1
V
IS
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
MaximumꢀBodyꢁDiodeꢀPulsedꢀCurrent
14
42
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
810
110
5
1028 1240
pF
pF
pF
Ω
V
GS=0V,ꢀVDS=25V,ꢀf=1MHz
GS=0V,ꢀVDS=0V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
167
11
225
17
V
1.9
3.9
5.9
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
TotalꢀGateꢀCharge
17
22
6.3
8
27
nC
nC
nC
ns
ns
ns
ns
VGS=10V,ꢀVDS=200V,ꢀID=10A
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
28
57
65
40
158
1
VGS=10V,ꢀVDS=125V,ꢀID=10A,
TurnꢁOnꢀRiseꢀTime
RG=25Ω
tD(off)
tf
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
trr
IF=10A,dI/dt=100A/µs,VDS=100V
IF=10A,dI/dt=100A/µs,VDS=100V
125
0.8
190
1.2
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
ns
Qrr
µC
A.ꢀTheꢀvalueꢀofꢀRθJA isꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀin2 FRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTAꢀ=25°C.ꢀꢀTheꢀ
PowerꢀDissipationꢀPDSM isꢀbasedꢀonꢀRθJA tꢀꢀ≤ 10sꢀvalueꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀgivenꢀ
applicationꢀdependsꢀonꢀtheꢀuser'sꢀspecificꢀboardꢀdesign.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=150°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupperꢀ
dissipationꢀlimitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.ꢀ
C.ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀRatingsꢀareꢀbasedꢀonꢀlowꢀfrequencyꢀandꢀdutyꢀcyclesꢀtoꢀkeepꢀinitialꢀ
TJ =25°C.
D.ꢀTheꢀRθJA isꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedanceꢀfromꢀjunctionꢀtoꢀcaseꢀRθJC andꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300µsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedanceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassumingꢀaꢀ
maximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=150°C.ꢀTheꢀSOAꢀcurveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.ꢀ
G.Theseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀin2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTA=25°C.
H.ꢀL=60mH,ꢀIAS=4.5A,ꢀVDD=150V,ꢀRG=25Ω,ꢀStartingꢀTJ=25°C.
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE.
2/6
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AON6458
ꢀꢀꢀꢀꢀꢀꢀꢀꢀ
250V,14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
100
10
1
ꢁ55°C
VDS=40V
10V
125°C
6.5V
6.0V
25°C
VGS=5.5V
25
0
0.1
0
5
10
15
VDS (Volts)
Figure 1: On-Region Characteristics
20
30
2ꢀ
3
4ꢀ
6ꢀ
8ꢀ
10ꢀ
VGS(Volts)
Figure 2: Transfer Characteristics
0.30ꢀ
0.25ꢀ
0.20ꢀ
0.15ꢀ
0.10ꢀ
0.05ꢀ
0.00ꢀ
VGS=10V
2.5
VGS=10V
ID=10A
2
1.5
1
0.5
0
0
5
10
15
ID (A)
20
25
ꢁ100
ꢁ50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
Figure 3: On-Resistance vs. Drain Current and Gat
Voltage
1.0E+02
1.2
1.0E+01
1.1
1
125°C
1.0E+00
1.0Eꢁ01
1.0Eꢁ02
1.0Eꢁ03
1.0Eꢁ04
25°C
0.9
0.8
0.2
0.4
0.6
0.8
1.0
ꢁ100
ꢁ50
0
50
100
150
200
TJ (oC)
VSD (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: Break Down vs. Junction Temperature
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3/6
AON6458
ꢀꢀꢀꢀꢀꢀꢀꢀꢀ
250V,14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=200V
ID=10A
Ciss
12
9
1000
100
10
1
Coss
6
3
Crss
0
0
5
10
15
20
25
30
35
0.1
1
10
100
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
400
TJ(Max)=150°C
TC=25°C
10µs
10
1
300
200
100
0
100µs
RDS(ON)ꢀ
limited
1ms
DC
10ms
0.1s
0.1
0.01
TJ(Max)=150°C
TC=25°C
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
0.1
0.01
PD
SingleꢀPulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.01
0.1
1
10
100
4/6
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AON6458
ꢀꢀꢀꢀꢀꢀꢀꢀꢀ
250V,14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
15
12
9
6
3
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note B)
Figure 13: Current De-rating (Note B)
300
250
200
150
100
50
TJ(Max)=150°C
TA=25°C
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
RθJA=64°C/W
0.1
PD
0.01
SingleꢀPulse
0.1
Ton
T
0.001
0.0001
0.001
0.01
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
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AON6458
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
250V,14A N-Channel MOSFET
GateꢀChargeꢀTestꢀCircuitꢀ&ꢀWaveform
Vgss
Qgg
10V
+
VDC
+
VDC
Q
g
s
Qggd
Vds
ꢁ
ꢁ
DUTT
Vgss
Igg
Charge
ResistiveꢀSwitchingꢀTestꢀCircuitꢀ&ꢀWaveforms
RL
VVds
Vds
90%
10%
+
DUT
Vddd
Vgss
V
D
C
Rgg
ꢁ
Vgss
Vggs
t dd(o
t
r
t
n
)
t
f
t oon
too
f
UnclampedꢀInductiveꢀSwitchingꢀ(UIS)ꢀTestꢀCircuitꢀ&ꢀWaveforms
L
2
Eꢀꢀꢀ=ꢀ1/2ꢀLI
AR
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
ꢁ
DUT
Vgs
Vgs
DiodeꢀRecoveryꢀTestꢀCircuitꢀ&ꢀWaveforms
Qꢀꢀꢀ=ꢀꢁꢀꢀꢀIdt
Vdsꢀ+
Vdsꢀꢁ
Ig
rr
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
ꢁ
Vds
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