AON6514 [FREESCALE]

30V N-Channel AlphaMOS; 30V N通道AlphaMOS


型号：	AON6514
厂家：	Freescale
描述：	30V N-Channel AlphaMOS 30V N通道AlphaMOS
文件：	总6页 (文件大小：290K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AON6514

30V N-Channel AlphaMOS

General Description

• Latest Trench Power AlphaMOS ( αMOS LV) technology

• Very Low RDS(on) at 4.5V_GS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

Features

V_DS

30V

30A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

< 5mΩ

< 8.5mΩ

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

±20

V_GS

T_C=25°C

Continuous Drain

Current^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

120

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

Avalanche energy L=0.05mH ^C

I_AS

E_AS

V_DSSpike

100ns

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

Power Dissipation ^A

4.1

P_DSM

°C

2.6

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

3.5

1/6

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AON6514

30V N-Channel AlphaMOS

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V

BV_DSS

Drain-Source Breakdown Voltage

V_DS=30V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

V_DS=0V, V_GS= ±20V

V_DS=V_GS，I_D=250µA

V_GS=10V, I_D=20A

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

100

2.2

V_GS(th)

1.2

1.8

4.1

5.6

6.7

mΩ

R_DS(ON)

Static Drain-Source On-Resistance

T_J=125°C

6.8

8.5

V_GS=4.5V, I_D=20A

V_DS=5V, I_D=20A

I_S=1A,V_GS=0V

mΩ

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

0.7

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

951

373

Ω

V_GS=0V, V_DS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

0.7

1.5

2.3

SWITCHING PARAMETERS

Q_g(10V) Total Gate Charge

15.7

7.5

2.8

3.2

6.25

2.5

18.5

22.5

10.5

Q_g(4.5V) Total Gate Charge

V_GS=10V, V_DS=15V, I_D=20A

Q_gs

Q_gd

t_D(on)

t_r

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

V_GS=10V, V_DS=15V, R_L=0.75Ω,

R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=20A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

10.2

13.6

Q_rr

A. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

Power dissipation P_DSMis based on R _θJAand the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design.

B. The power dissipation P_Dis based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T_J(MAX)=150°C.

D. The R_θJAis the sum of the thermal impedance from junction to case R_θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

2/6

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AON6514

30V N-Channel AlphaMOS

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

10V

4.5V

V_DS=5V

125°C

25°C

V_GS=3.0V

V_GS(Volts)

V_DS(Volts)

Fig 1: On-Region Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

1.8

1.6

1.4

1.2

V_GS=4.5V

V_GS=10V

I_D=20A

V_GS=10V

V_GS=4.5V

I_D=20A

0.8

100 125 150 175 200

I_D(A)

Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

1.0E+02

1.0E+01

I_D=20A

1.0E+00

125°C

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0

0.2

0.4

V_SD(Volts)

Figure 6: Body-Diode Characteristics (Note E)

0.6

0.8

1.0

1.2

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

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3/6

AON6514

30V N-Channel AlphaMOS

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1200

1000

800

600

400

200

V_DS=15V

I_D=20A

C_iss

C_oss

C_rss

Q_g(nC)

V_DS(Volts)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

200

160

120

1000.0

100.0

10.0

1.0

10µs

T_J(Max)=150°C

T_C=25°C

R_DS(ON)

10µs

100µs

1ms

10ms

T_J(Max)=150°C

T_C=25°C

0.1

0.0

0.01

0.1

100

0.0001

0.001

0.01

0.1

V_DS(Volts)

Pulse Width (s)

Figure 9: Maximum Forward Biased

Safe Operating Area (Note F)

Figure 10: Single Pulse Power Rating Junction-to-Case

(Note F)

D=T_on/T

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJC=5°C/W

P_D

0.1

Single Pulse

T_on

0.01

1E-05

0.0001

0.001

0.01

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

0.1

100

4/6

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AON6514

30V N-Channel AlphaMOS

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

T_CASE(°C)

100

125

150

T_CASE(°C)

100

125

150

Figure 12: Power De-rating (Note F)

Figure 13: Current De-rating (Note F)

T_A=25°C

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJA=64°C/W

0.1

0.01

P_D

Single Pulse

0.001

T_on

0.001

1E-05

0.0001

0.01

0.1

100

1000

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

5/3

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AON6514

30V N-Channel AlphaMOS

Gate Charge Test Circuit & Waveform

Vgs

10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Charge

Resistive Switching Test Circuit & Waveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t_d(on)

t_d(off)

t_on

t_off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

E_AR= 1/2 LI_A²_R

BV_DSS

Vds

Vgs

Vds

Vgs

Vdd

I _AR

VDC

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q_rr= - Idt

Vds +

Vds -

DUT

Vgs

t_rr

Isd

I _F

Isd

Vgs

dI/dt

I _RM

Vdd

VDC

Vdd

Vds

6/6

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