AON7752 [FREESCALE]
30V N-Channel AlphaMOS; 30V N通道AlphaMOS
| 型号： | AON7752 |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel AlphaMOS |
| 文件： | 总6页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7752
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS ( αMOS LV) technology
• Integrated Schottky Diode (SRFET)
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Features
VDS
30V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
16A
< 8.2mΩ
< 14.5mΩ
D
Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
1
8
7
6
5
2
3
4
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
30
±20
16
V
V
VGS
TC=25°C
Continuous Drain
CurrentG
ID
TC=100°C
12
A
Pulsed Drain Current C
IDM
64
TA=25°C
TA=70°C
15
Continuous Drain
Current
Avalanche Current C
IDSM
A
12
IAS
22
A
mJ
V
Avalanche energy L=0.05mH C
EAS
12
VDS Spike
100ns
VSPIKE
36
TC=25°C
TC=100°C
TA=25°C
TA=70°C
20
PD
W
Power Dissipation B
Power Dissipation A
8.3
3.1
PDSM
W
°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
60
5
Max
40
75
6
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
RθJC
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AON7752
30V N-Channel AlphaMOS
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=10mA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.5
mA
100
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS，ID=250µA
VGS=10V, ID=16A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.5
nA
V
VGS(th)
1.5
2
6.8
9.8
11.6
62
8.2
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
12
VGS=4.5V, ID=10A
VDS=5V, ID=16A
IS=0.2A,VGS=0V
14.5
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.45
0.65
16
V
Maximum Body-Diode Continuous CurrentG
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
605
275
36.5
2
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11
5.5
2
15
8
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=16A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.6
5
VGS=10V, VDS=15V, RL=0.9Ω,
RGEN=3Ω
2.5
17
3
ns
tD(off)
tf
ns
ns
trr
IF=16A, dI/dt=500A/µs
IF=16A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11.5
12.5
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON7752
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
10V
4.5V
5V
7V
VDS=5V
60
40
20
0
4V
3.5V
125°C
25°C
VGS=3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
1.6
14
12
10
8
VGS=4.5V
VGS=10V
ID=16A
1.4
1.2
1
6
VGS=10V
4
VGS=4.5V
ID=10A
2
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
25
20
15
10
5
1.0E+01
ID=16A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
2
4
6
8
10
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
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AON7752
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1600
VDS=15V
ID=16A
8
1400
1200
1000
800
600
400
200
0
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
0
5
10
VDS (Volts)
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
100µs
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6°C/W
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
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AON7752
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
20
15
10
5
15
10
5
0
0
0
25
50
75
TCASE (°C)
100
125
150
0
25
50
75
TCASE (°C)
100
125
150
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
100.0
10.0
1.0
10000
TA=25°C
TA=25°C
TA=100°C
1000
100
10
TA=150°C
TA=125°C
1
1E-05
0.001
0.1
10
1000
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambie
(Note H)
Time in avalanche, tA (µs)
Figure 14: Single Pulse Avalanche capability (Note
C)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
0.001
Ton
T
0.001
1E-05
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AON7752
30V N-Channel AlphaMOS
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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