AON7788 [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AON7788 |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：480K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7788
30V N-Channel MOSFET
General Description
SRFETTMAON7788 uses advanced trench technology with a monolithically integrated Schottky diode to provide
excellent R
DS(ON)and low gate charge. This device issuitable for use as a low side FET in SMPS, load switching
and general purpose applications.
Features
VDS
30V
40A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
< 4.5mΩ
< 5.3mΩ
D
Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
ID
IDM
IDSM
±12
Gate-Source Voltage
Continuous Drain
Current G
V
A
TC=25°C
40
TC=100°C
31
Pulsed Drain Current C
150
TA=25°C
TA=70°C
20
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
A
16
IAS, IAR
35
A
EAS, EAR
61
mJ
TC=25°C
36
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
14
3.1
2
PDSM
W
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
60
75
Steady-State
Steady-State
RθJC
2.8
3.4
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AON7788
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
30
V
V
DS=30V, VGS=0V
0.5
100
100
2
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.2
1.6
VGS=10V, VDS=5V
150
A
VGS=10V, ID=20A
3.7
5.5
4.2
115
0.4
4.5
6.6
5.3
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.7
40
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2730
240
140
0.6
3415
340
232
1.2
4100
440
325
1.8
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
19
24
6.6
10
9
29
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.5
47
5.5
tD(off)
tf
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8
10
15
12
18
ns
Qrr
nC
12
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R
t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
θJA
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON7788
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
VDS=5V
10V
4.5V
3V
VGS=2.5V
125°C
25°C
0
1
2
3
4
5
1.5
2.0
2.5
3.0
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
5.0
4.5
4.0
3.5
3.0
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
ID=20A
0.8
0
5
10
15
D (A)
20
25
30
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
10
1.0E+02
1.0E+01
ID=20A
125°C
8
6
4
2
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
125°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON7788
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4500
4000
3500
3000
2500
2000
1500
1000
500
10
8
VDS=15V
ID=20A
Ciss
6
4
Crss
2
Coss
0
0
0
5
10
15
VDS (Volts)
20
25
30
0
10
20
30
Qg (nC)
40
50
60
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
100µs
1ms
10ms
DC
TJ(Max)=150°C
40
0.1
TC=25°C
0
0.0
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.4°C/W
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AON7788
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
1000
100
10
35
30
25
20
15
10
5
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
0
25
50
75
CASE (°C)
100
125
150
1
10
100
1000
T
Time in avalanche, tA (µs)
Figure 13: Power De-rating (Note F)
Figure 12: Single Pulse Avalanche capability
(Note C)
10000
1000
100
10
50
40
30
20
10
0
TA=25°C
1
0
25
50
75
100
125
150
Pulse Width (s)
0.1
TCASE (°C)
0.00001
0.001
10
1000
Figure 15: Single Pulse Power Rating Junction-to-
Figure 14: Current De-rating (Note F)
Ambient (Note H)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
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AON7788
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.7
0.6
0.5
0.4
0.3
0.2
0.1
20A
10A
VDS=30V
VDS=15V
5A
IS=1A
0
25
50
75
100 125 150 175 200
Temperature (°C)
0
50
100
Temperature (°C)
150
200
Figure 18: Diode Forward voltage vs. Junction
Temperature
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
25
20
15
10
5
12
10
8
12
4
di/dt=800A/µs
di/dt=800A/µs
3.5
3
125ºC
25ºC
10
8
125ºC
trr
2.5
2
Qrr
25ºC
6
6
1.5
1
125ºC
125ºC
4
4
S
Irm
25ºC
2
2
0.5
0
25ºC
20
0
0
0
0
5
10
15
20
25
30
0
5
10
15
S (A)
25
30
IS (A)
I
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
25
20
15
10
5
10
18
15
12
9
5
4.5
4
Is=20A
Is=20A
trr
8
125ºC
125ºC
3.5
3
25ºC
6
25ºC
2.5
2
Qrr
4
125ºC
6
25ºC
1.5
1
25ºC
2
S
3
Irm
0.5
0
125ºC
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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AON7788
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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