IRL3803 [FREESCALE]
HEXFET® Power MOSFET; HEXFET®功率MOSFET
| 型号： | IRL3803 |
| 厂家： | 
Freescale |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总7页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRL3803
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 30V
RDS(on) = 0.006Ω
G
l Fully Avalanche Rated
Description
ID = 140Aꢀ
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowestpossibleon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levelstoapproximately50watts. Thelowthermalresistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
140ꢀ
98ꢀ
470
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
±16
Single Pulse Avalanche Energy
Avalanche Current
610
mJ
A
71
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
20
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
––––
Typ.
––––
0.50
Max.
Units
RθJC
RθCS
RθJA
0.75
––––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
––––
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IRL3803
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.006
––– ––– 0.009
VGS = 10V, ID = 71A
VGS = 4.5V, ID = 59A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 71A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
1.0
55
––– –––
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 140
––– ––– 41
––– ––– 78
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -16V
Qg
ID = 71A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
–––
14 –––
VDD = 15V
––– 230 –––
ID = 71A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
29 –––
35 –––
RG = 1.3Ω, VGS = 4.5V
RD = 0.20Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 5000 –––
––– 1800 –––
––– 880 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– 140ꢀ
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 470
S
p-n junction diode.
TJ = 25°C, IS = 71A, VGS = 0V
TJ = 25°C, IF = 71A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 120 180
––– 450 680
V
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 180µH
ꢀ Caculated continuous current based on maximum allowable
RG = 25Ω, IAS = 71A. (See Figure 12)
ISD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
,
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IRL3803
10000
1000
100
10
VGS
15V
10000
1000
100
10
TOP
VGS
12V
TOP
15V
10V
12V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.0V
BOTTOM 2.0V
1
2.0V
1
0.1
0.1
2.0V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
J
0.01
A
T
= 175°C
J
0.01
0.1
1
10
100
A
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
TJ = 175oC
TJ = 25oC
2.0
1.5
1.0
0.5
0.0
1000
I
= 120A
D
TJ = 25°C
TJ = 175°C
100
10
1
0.1
0.01
V
DS = 25V
V
= 10V
20µs PULSE W IDTH
G S
A
9.0A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
2.0
3.0
4.0
5.0
6.0
7.0
8.0
T
J
, Junction Tem perature (°C)
VG S , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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IRL3803
15
12
9
10000
8000
6000
4000
2000
0
I
= 71A
V
C
C
C
= 0V ,
f = 1M Hz
D
G S
iss
= C
= C
= C
+ C
+ C
,
C
SHORTE D
gs
gd
ds
gd
ds
V
V
= 24V
= 15V
D S
D S
rss
oss
C
C
iss
gd
oss
6
C
rss
3
FO R TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPE RATION IN THIS AREA LIM ITE D
BY R
DS(on)
10µs
T
= 175°C
J
100µs
T
= 25°C
J
1m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
G S
2.8
S ingle Pulse
10m s
A
A
0.4
0.8
1.2
1.6
2.0
2.4
3.2
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRL3803
140
120
100
80
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
Fig 10a. Switching Time Test Circuit
40
V
DS
20
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL3803
1500
1200
900
600
300
0
L
I
D
V
DS
TOP
29A
50A
71A
D.U.T.
BO TTO M
R
+
-
G
V
DD
I
4.5 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
= 15V
DD
V
(BR)DSS
A
175
25
50
75
100
125
150
t
p
Starting T , Junction Tem perature (°C)
J
V
DD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
4.5 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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IRL3803
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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