MC4406 [FREESCALE]
N-Channel 30-V (D-S) MOSFET High performance trench technology; N通道30 -V （ DS ） MOSFET高性能沟道技术
| 型号： | MC4406 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30-V (D-S) MOSFET High performance trench technology |
| 文件： | 总5页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4406/MC4406
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
13
11
13.5 @ VGS = 10V
30
20 @ VGS = 4.5V
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
8
1
2
7
6
5
3
4
•
•
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
VGS
Limit
30
±20
±13
±11
±50
2.3
Units
Drain-Source Voltage
Gate-Source Voltage
V
TA=25oC
TA=70oC
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
A
TA=25oC
TA=70oC
3.1
2.2
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJC
RθJA
Maximum Units
Maximum Junction-to-Casea
oC/W
25
t <= 5 sec
t <= 5 sec
Maximum Junction-to-Ambienta
50
oC/W
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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Freescale
AO4406/MC4406
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
V
nA
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
1
±100
1
25
VDS = 24 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
uA
VDS = 24 V, VGS = 0 V, TJ = 55oC
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 8 A
VDS = 15 V, ID = 10 A
IS = 2.3 A, VGS = 0 V
20
A
13.5
20
Drain-Source On-ResistanceA
rDS(on)
mΩ
Forward TranconductanceA
Diode Forward Voltage
gfs
VSD
40
0.7
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
12.5
2.6
4.6
1191
412
160
20
9
70
20
V
DS = 15 V, VGS = 4.5 V,
ID = 10 A
nC
pF
VDS = 15 V, VGS = 0 V,
f = 1MHz
D
V
DD = 25 V, RL = 25 Ω , I = 1 A,
nS
GEN
V
= 10 V
Turn-Off Delay Time
Fall-Time
td(off)
tf
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation
t of the application or
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
under its patent rights nor the
are not designed,
rights of others. freescale products
customer’s technical experts. freescale does not convey any license
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.
and its
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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Freescale
AO4406/MC4406
Typical Electrical Characteristics (N-Channel)
50
40
30
20
10
0
2
1.7
1.4
1.1
0.8
0.5
VGS = 10V
6.0V
4.0V
4.5V
6.0V
3.0V
10V
0
0.5
1
1.5
2
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
1.6
1.4
0.05
VGS = 10V
ID = 10A
ID = 10A
0.04
1.2
0.03
0.02
1.0
TA = 25oC
0.8
0.6
0.01
0
-50
-25
0
25
50
75
100 125 150
2
4
6
8
10
TJ Juncation Temperature (C)
VGS, Gate To Source Voltage (V)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
100
10
VD=5V
-55C
VGS = 0V
50
40
30
20
10
25C
TA = 125oC
1
12 5 C
0.1
25oC
0.01
0.001
0.0001
0
0
1
2
3
4
5
6
V
GS Gate to So urce Vo ltage (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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Publication Order Number:
PRELIMINARY
DS-AM4410_F
Freescale
AO4406/MC4406
Typical Electrical Characteristics (N-Channel)
10
8
1600
1200
800
400
0
f = 1MHz
GS = 0 V
V
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
16
20
24
28
0
5
10
15
20
25
30
Qg, Gate Charge (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
50
2.4
SINGLE PULSE
RqJA = 125C/W
TA = 25C
VDS = VGS
ID = 250mA
2.2
40
30
20
10
0
2
1.8
1.6
1.4
1.2
1
-50 -25
0
25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (oC)
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 9. Threshold Vs Ambient Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D = 0.5
RqJA(t) = r(t) * RqJA
RqJA = 125 C/W
0.2
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
0.001
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
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Freescale
AO4406/MC4406
Package Information
SO-8: 8LEAD
H x 45°
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