MC4619 [FREESCALE]
P & N-Channel 30-V (D-S) MOSFET High power and current handling capability; P＆ N通道30 -V （ DS ） MOSFET的高功率和电流处理能力
| 型号： | MC4619 |
| 厂家： | 
Freescale |
| 描述： | P & N-Channel 30-V (D-S) MOSFET High power and current handling capability |
| 文件： | 总8页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4619/MC4619
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
6.0
40 @ VGS = 4.5V
31 @ VGS = 10V
80 @ VGS = -4.5V
52 @ VGS = -10V
30
6.9
-4.2
-5.2
-30
•
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
1
2
8
7
Miniature SO-8 Surface Mount Package
Saves Board Space
•
•
High power and current handling capability
3
6
5
Low side high current DC-DC Converter
applications
4
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
6.9
-30
V
±20
TA=25oC
TA=70oC
-5.2
-6.8
-20
-1.3
2.1
Continuous Drain Currenta
ID
A
5.4
20
Pulsed Drain Currentb
IDM
IS
Continuous Source Current (Diode Conduction)a
TA=25oC
1.3
2.1
A
Power Dissipationa
PD
W
TA=70oC
1.3
1.3
oC
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
Maximum Junction-to-Casea
oC/W
oC/W
RθJC
t <= 5 sec
t <= 5 sec
40
60
Maximum Junction-to-Ambienta
RθJA
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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1
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AO4619/MC4619
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Ch Min Typ Max
Static
GS
DS D
= V , I = 250 uA
V
N
1
VGS(th)
V
Gate-Threshold Voltage
GS
GS
DS
D
V
= V , I = -250 uA
P
P
N
-1.0
DS
V
= -20 V, V = 0 V
±100
±100
-1
IGSS
IDSS
Gate-Body Leakage
nA
uA
A
VGS = 20 V, VDS = 0 V
DS
V
GS
= -24 V, V = 0 V
P
Zero Gate Voltage Drain Current
On-State Drain CurrentA
N
N
P
1
VDS = 24 V, VGS = 0 V
VDS = 5 V, VGS = 10 V
VDS = -5 V, VGS = -10 V
20
-20
ID(on)
31
40
52
80
D
VGS = 10 V, I = 6.9 A
N
P
D
VGS = 4.5 V, I = 6 A
Drain-Source On-ResistanceA
rDS(on)
mΩ
D
VGS = -10 V, I = -5.2 A
D
VGS = -4.5 V, I = -4.2 A
VDS = 15 V, ID = 6.9 A
VDS = -15 V, ID = -5.2 A
25
10
N
P
Forward TranconductanceA
Dynamic
gfs
S
N
P
N
P
4.0
10
1.1
2.2
1.4
Qg
Qgs
Qgd
Total Gate Charge
N-Channel
VDS=15V, VGS=10V, ID=6.9A
P-Channel
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
nC
nS
N
DS
GS
D
V
=-15V, V =-10V, I =-5.2A
P
N
P
N
P
N
P
1.7
8
10
5
2.8
23
53.6
3
td(on)
tr
td(off)
tf
N-Chaneel
GS
D
VDD=15V, V =10V, I =1A ,
RGEN=6Ω,
P-Channel
Turn-Off Delay Time
Fall-Time
DD
GS D
=-15V, V =-10V, I =-1A
V
GEN
N
P
R
=6Ω
46
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
e to any products herein. freescalemakes no warranty, representation
FREESCALE reserves the right to make changes without further notic
t of the application or
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
under its patent rights nor the
are not designed,
rights of others. freescale products
customer’s technical experts. freescaledoes not convey any license
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal inju
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale
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Freescale
AO4619/MC4619
Typical Electrical Characteristics (N-Channel)
30
25
20
15
10
5
30
TA = -55oC
VDS = 5V
25oC
VGS = 10V
25
6.0V
125oC
20
15
10
5
5.0V
4.0V
3.0V
0
0
0.5
1.5
2.5
3.5
4.5
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
2.5
2
1500
f = 1MHz
VGS = 0 V
1200
CISS
900
4.5V
1.5
1
600
6.0V
COSS
300
10V
25
CRSS
0.5
0
0
5
10
15
20
25
30
0
5
10
15
20
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
1.6
10
8
VGS = 10V
ID = 7A
ID = 7A
1.4
1.2
15V
6
4
1.0
2
0.8
0.6
0
0
3
6
9
12
15
-50
-25
0
25
50
75
100 125 150
Qg, GATE CHARGE (nC)
T Juncation Temperature (
J
)
篊
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
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Freescale
AO4619/MC4619
Typical Electrical Characteristics (N-Channel)
100
0.1
0.08
0.06
0.04
0.02
0
VGS = 0V
ID = 7 A
10
1
TA = 125oC
25oC
0.1
0.01
0.001
0.0001
TA = 25oC
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
2.2
2
50
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
VDS = VGS
ID = -250mA
40
1.8
1.6
1.4
1.2
1
30
20
10
0
-50 -25
0
25 50
75 100 125 150 175
0.001
0.01
0.1
1
10
100
t1, TIME (SEC)
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D = 0.5
0.2
0.1
RqJA(t) = r(t) + RqJA
RqJA = 125oC/W
0.0
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t)
SINGLE P ULSE
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (s ec)
Figure 11. Transient Thermal Response Curve
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Freescale
AO4619/MC4619
Typical Electrical Characteristics (P-Channel)
30
15
12
9
VGS = -10V
TA = -55oC
25oC
-6.0V
VDS = -5V
-5.0V
125oC
20
10
0
-4.0V
6
3
-3.0V
5
0
0
1
2
3
4
6
1
1.5
2
2.5
3
3.5
4
4.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 1. On-Region Characteristics
800
2
f = 1 MHz
VGS = 0 V
700
600
500
400
300
200
100
0
1.8
1.6
1.4
1.2
1
CISS
-4.5V
-6.0V
-10V
COSS
CRSS
0.8
0
6
12
18
24
30
0
5
10
15
20
25
30
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
10
1.6
1.4
1.2
1.0
0.8
0.6
ID = -5.7A
VGS = 10V
ID = 5.7A
8
6
4
2
0
-15V
-50 -25
0
25
50
75 100 125 150
0
2
4
6
8
10
TJ Juncation Temperature (C)
Figure 6. On-Resistance Variation with Temperature
Qg, GATE CHARGE (nC)
Figure 5. Gate Charge Characteristics
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Freescale
AO4619/MC4619
Typical Electrical Characteristics (P-Channel)
0.25
0.2
0.15
0.1
0.05
0
100
ID = -5.7A
VGS =0V
TA = 125oC
10
1
0.1
25oC
0.01
0.001
0.0001
TA = 25oC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2
4
6
8
10
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
50
2.2
2
VDS = VGS
ID = -250mA
SINGLE PULSE
RqJA = 125C/W
TA = 25C
40
1.8
1.6
1.4
1.2
1
30
20
10
0
-50 -25
0
25 50 75 100 125 150 175
0.001
0.01
0.1
1
10
100
1000
TA, AMBIENT TEMPERATURE (oC)
t1, TIME (sec)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D=0.5
0.2
RqJA(t) = r(t) + RqJA
RqJA = 125oC/W
0.1
0.05
P (pk)
0.02
0.01
t 1
t2
0.01
0.001
TJ - TA = P *RqJA(t)
Duty Cycle, D = t1 / t2
S INGLEP ULS E
0.001
0.0001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve
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Freescale
AO4619/MC4619
Package Information
SO-8: 8LEAD
H x 45°
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7
Ordering information
• AM4512C-T1-XX
– A: Analog Power
– M: MOSFET
– 4512: Part number
– C: Complementary
– T1: Tape & reel
– XX: Blank:
PF:
Standard
Leadfree
8
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