MC4936 [FREESCALE]

N-Channel 30-V (D-S) MOSFET High performance trench technology; N通道30 -V ( DS ) MOSFET高性能沟道技术
MC4936
型号: MC4936
厂家: Freescale    Freescale
描述:

N-Channel 30-V (D-S) MOSFET High performance trench technology
N通道30 -V ( DS ) MOSFET高性能沟道技术

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中文:  中文翻译
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Freescale  
AO4936/MC4936  
N-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
VDS (V)  
rDS(on) m()  
ID (A)  
6.5  
32 @ VGS = 4.5V  
40 @ VGS = 2.5V  
30  
5.8  
1
2
3
4
8
7
Low rDS(on) provides higher efficiency and  
extends battery life  
6
5
Low thermal impedance copper leadframe  
SOIC-8 saves board space  
Fast switching speed  
High performance trench technology  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
Limit  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
±12  
TA=25oC  
TA=70oC  
6.5  
±5.3  
±50  
2.3  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
A
W
oC  
TA=25oC  
TA=70oC  
2.0  
Power Dissipationa  
PD  
1.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
oC/W  
t <= 10 sec  
Steady-State  
62.5  
Maximum Junction-to-Ambienta  
RθJA  
oC/W  
110  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
www.freescale.net.cn  
1
Freescale  
AO4936/MC4936  
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)  
Limits  
Unit  
Parameter  
Symbol  
Test Conditions  
Min Typ Max  
Static  
Gate-Threshold Voltage  
Gate-Body Leakage  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 uA  
VDS = 0 V, VGS = ±12 V  
0.7  
±100 nA  
VDS = 24 V, VGS = 0 V  
VDS = 24 V, VGS = 0 V, TJ = 55oC  
1
IDSS  
Zero Gate Voltage Drain Current  
uA  
25  
On-State Drain CurrentA  
ID(on)  
VDS = 5 V, VGS = ±12 V  
VGS = 4.5 V, ID = 6.5 A  
VGS = 2.5 V, ID = 5.8 A  
20  
A
32  
40  
Drain-Source On-ResistanceA  
rDS(on)  
m  
Forward TranconductanceA  
Diode Forward Voltage  
gfs  
VDS = 15 V, ID = 6.5 A  
IS = 2.3 A, VGS = 0 V  
40  
S
VSD  
0.7  
V
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Qg  
Qgs  
Qgd  
td(on)  
tr  
6.0  
1.0  
1.5  
20  
9
VDS = 15 V, VGS = 4.5 V,  
ID = 6.5 A  
nC  
nS  
VDD = 25 V, RL = 25 , I  
GEN = 10 V  
D
= 1 A,  
V
Turn-Off Delay Time  
Fall-Time  
td(off)  
tf  
70  
20  
Notes  
a.  
b.  
Pulse test: PW <= 300us duty cycle <= 2%.  
Guaranteed by design, not subject to production testing.  
rther notice to any products herein. RF EESCALE makes no  
FREESCALE reserves the right to make changes without fu  
warranty, representation  
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or  
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and  
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by  
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,  
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or  
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.  
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its  
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney  
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.  
claim alleges that freescale was negligent regarding the  
www.freescale.net.cn  
2
Freescale  
AO4936/MC4936  
Typical Electrical Characteristics  
30  
25  
20  
15  
10  
5
TA = -55oC  
20  
25oC  
4.5V  
125oC  
15  
2.5V  
10  
5
0
0
1
1.5  
2
2.5  
3
3.5  
0
0.25  
0.5  
0.75  
1
1.25  
1.5  
1.75  
2
VGS - Gate-to-Source Voltage (V)  
VDS - Drain-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
1000  
800  
600  
400  
200  
0
1.4  
1.2  
1
Ciss  
Coss  
Crss  
VGS = 3.0V  
4.5V  
0.8  
0
6
12  
18  
24  
30  
0
5
10  
15  
20  
25  
I
D - Drain Current (A)  
V
DS - Drain-to-Source Voltage (V)  
Capacitance  
On-Resistance vs. Drain Current  
10  
1.6  
1.4  
1.2  
1
8
6
4
2
0
VGS = 4.5V  
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
3
6
9
12  
15  
TJ - Junction Temperature (oC)  
Qg - Total Gate Charge (nC)  
Gate Charge  
On-Resistance vs. Junction Temperature  
www.freescale.net.cn  
3
Freescale  
AO4936/MC4936  
Typical Electrical Characteristics (N-Channel)  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
100  
10  
TA = 125oC  
1
25oC  
0.1  
0.01  
0.001  
TA = 25oC  
0.0001  
0
2
2.5  
3
3.5  
4
4.5  
5
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
VGS - Gate-to-Source Voltage (V)  
VSD - Source-to-Drain Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs.Gate-to Source Voltage  
50  
40  
30  
20  
10  
0
1.8  
1.6  
1.4  
1.2  
1
SINGLE PULSE  
RθJA = 250°C/W  
TA = 25°C  
ID = 250  
A
µ
0.8  
0.6  
0.4  
0.2  
0
0.001  
0.01  
0.1  
1
10  
100  
1000  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Time (sec)  
TJ - Temperature (oC)  
Threshold Voltage  
Single Pulse Power  
1
D=0.5  
RθJA(t) = r(t) +  
RθJA  
0.2  
0.1  
RθJA = 250 °C/W  
0.1  
0.01  
0.05  
P(pk  
0.02  
0.01  
t1  
t2  
TJ - TA = P *  
RθJA(t)  
SINGLEPULSE  
Duty Cycle, D = t1  
/ t  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
www.freescale.net.cn  
4
Freescale  
AO4936/MC4936  
Package Information  
SO-8: 8LEAD  
H x 45°  
www.freescale.net.cn  
5

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