MC6401 [FREESCALE]

P-Channel 20-V (D-S) MOSFET High power and current handling capability; P通道20 -V （ DS ） MOSFET的高功率和电流处理能力


型号：	MC6401
厂家：	Freescale
描述：	P-Channel 20-V (D-S) MOSFET High power and current handling capability P通道20 -V （ DS ） MOSFET的高功率和电流处理能力
文件：	总3页 (文件大小：287K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Freescale

AO6401/MC6401

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

-4.9

56 @ V_GS= -4.5V

80 @ V_GS= -2.5V

-26.5

-4.2

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature TSOP-6 Surface Mount Package

Saves Board Space

High power and current handling capability

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-26.5

±12

T_A=25^oC

T_A=70^oC

-4.9

-4.0

±20

-1.7

2.0

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

I_DM

I_S

T_A=25^oC

T_A=70^oC

P_D

1.3

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Units

^oC/W

Maximum

62.5

Maximum Junction-to-Ambient^a

t <= 5 sec

R_θJA

110

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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AO6401/MC6401

SPECIFICATIONS (T_A= 25^oC UNLESS OTHERWISE NOTED)

Limits

Unit

Parameter

Symbol

Test Conditions

Min Typ Max

Static

Gate-Threshold Voltage

Gate-Body Leakage

V_GS(th)

I_GSS

V_DS= V_GS, I_D= -250 uA

V_DS= 0 V, V_GS= ±12 V

-0.7

±100 nA

V_DS= -21 V, V_GS= 0 V

V_DS= -21 V, V_GS= 0 V, T_J= 55^oC

-1

I_DSS

Zero Gate Voltage Drain Current

-5

On-State Drain Current^A

I_D(on)

V_DS= -4.5 V, V_GS= -4.5 V

V_GS= -4.5 V, I_D= -4.9 A

V_GS= -2.5 V, I_D= -4.2 A

-15

Drain-Source On-Resistance^A

r_DS(on)

mΩ

Forward Tranconductance^A

Diode Forward Voltage

g_fs

V_DS= -10 V, I_D= -4.9 A

I_S= 1.7 A, V_GS= 0 V

V_SD

-0.8

Dynamic^b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Q_g

Q_gs

Q_gd

t_d(on)

t_r

2.4

3.9

_DS= -10 V, V_GS= -4.5 V,

I_D= -4.9 A

V_DD= -10 V, R_L= 6 Ω , I_D= -1 A,

VGEN = -4.5 V

Turn-Off Delay Time

Fall-Time

t_d(off)

t_f

Notes

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing.

rther notice to any products herein. RF EESCALE makes no

FREESCALE reserves the right to make changes without fu

warranty, representation

or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or

use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and

actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by

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intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or

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claim alleges that freescale was negligent regarding the

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AO6401/MC6401

Package Information

TSOP-6: 6LEAD

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