MC7402 [FREESCALE]

N-Channel 20V (D-S) MOSFET High performance trench technology; N沟道20V （ DS ） MOSFET高性能沟道技术


型号：	MC7402
厂家：	Freescale
描述：	N-Channel 20V (D-S) MOSFET High performance trench technology N沟道20V （ DS ） MOSFET高性能沟道技术
文件：	总4页 (文件大小：359K)
中文：	中文翻译
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Freescale

AO7402/MC7402

N-Channel 20V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V (V)

r_DS(on)(Ω)

I_D(A)

0.058 @V = 4.5 V 2.0

0.082 @V = 2.5V

1.7

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

SC70-3 saves board space

Fast switching speed

High performance trench technology

•

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±8

2.0

1.7

±20

1.6

T_A=25 C

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

T_A=70 C

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

T_A=25 C

0.34

0.22

P_D

Power Dissipation

T_A=70 C

^oC

Operating Junction and Storage Temperature Range

T, T -55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

100

Maximum Junction-to-Ambient^a

^oC/W

R_THJA

166

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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AO7402/MC7402

SPECIFICATIONS (T_A= 25^oC UNLESS OTHERWISE NOTED)

Limits

Unit

Parameter

Symbol

Test Conditions

Min Typ Max

Static

Gate-Threshold Voltage

Gate-Body Leakage

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250 uA

V_DS= 0 V, V_GS= ±8 V

0.7

±100 nA

V_DS= 16 V, V_GS= 0 V

I_DSS

Zero Gate Voltage Drain Current

On-State Drain Current^A

V_DS= 16 V, V_GS= 0 V, T_J= 55^oC

V_DS= 5 V, V_GS= 4.5 V

V_GS= 4.5 V, I_D= 2.0 A

V_GS= 2.5 V, I_D= 1.7 A

V_DS= 10 V, I_D= 2.0 A

I_S= 1.6 A, V_GS= 0 V

I_D(on)

Drain-Source On-Resistance^A

r_DS(on)

mΩ

Forward Tranconductance^A

Diode Forward Voltage

g_fs

V_SD

11.3

0.75

Dynamic^b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Q_g

Q_gs

Q_gd

C_iss

C_oss

C_rss

t_d(on)

t_r

7.5

0.6

1.0

720

165

V_DS= 10 V, V_GS= 4.5 V, I_D= 2.0 A

_DS= 15 V, V_GS= 0 V,

f = 1MHz

V_DD= 10 V, R_L= 15 Ω, I_D= 1 A,

_GEN= 4.5 V

Turn-Off Delay Time

Fall-Time

t_d(off)

t_f

Notes

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing.

FREESCALE reserves the right to make changes without further notic e to any products herein. Freescale makes no warranty, representation

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use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided infreescale data sheet s and/or specifications can and do vary in different applications and

actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by

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AO7402/MC7402

Typical Electrical Characteristics (N-Channel)

TA = -55^oC

VDS = 5V

25^oC

125^oC

V_GS= 10V

6.0V

5.0V

4.0V

3.0V

0.5

1.5

2.5

3.5

4.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure 2. Body Diode Forward Voltage Variation

with Source Current and Temperature

700

600

500

400

300

200

100

f = 1MHz

V_GS

= 0 V

2.5

C_ISS

4.5V

1.5

10V

C_OSS

C_RSS

0.5

V_DS, DRAIN TO SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

Figure 3. On Resistance Vs Vgs Voltage

Figure 4. Capacitance Characteristics

1.6

= 10V

I^D= 7A

I_D= 5.3A

15V

1.4

1.2

1.0

0.8

0.6

-50 -25

100 125 150

Qg, Gate Charge (nC)

T_JJuncation Temperature (ºC)

Figure 5. Gate Charge Characteristics

Figure 6. On-Resistance Variation with Temperature

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AO7402/MC7402

Typical Electrical Characteristics (N-Channel)

0.1

0.08

0.06

0.04

0.02

100

I_D= 5.3A

VGS = 0V

TA = 125^oC

25^oC

0.1

0.01

0.001

0.0001

T_A= 25^oC

0.2

0.4

0.6

0.8

1.2

1.4

V_GS, GATE TO SOURCE VOLTAGE (V)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Transfer Characteristics

Figure 8. On-Resistance with Gate to Source Voltage

2.2

VDS = VGS

ID = 250mA

SINGLE PULSE

R_θJA = 125^oC/W

TA = 25^oC

1.8

1.6

1.4

1.2

0.001

0.01

0.1

100

-50

-25

100

125

150

175

t1, TIME (SEC)

TA, AMBIENT TEMPERATURE (^oC)

Figure 9. Vth Gate to Source Voltage Vs Temperature

Figure 10. Single Pulse Maximum Power Dissipation

Normalized Thermal Transient Junction to Ambient

0.1

D = 0.5

0.2

0.1

RqJ_A(t) = r(t) + RqJA

RqJA = 125^oC/W

0.0

P(pk)

0.02

0.01

T_J- T_A= P * Rq J _A(t)

Duty Cycle, D = t1 / t2

SINGLE P ULSE

0.001

0.0001

0.01

0.1

100

1000

t1, TIME (s ec)

Figure 11. Transient Thermal Response Curve

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