MD7IC2250NR1 [FREESCALE]
RF LDMOS Wideband Integrated Power Amplifiers; RF LDMOS宽带集成功率放大器
| 型号： | MD7IC2250NR1 |
| 厂家： | 
Freescale |
| 描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 文件： | 总22页 (文件大小：705K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MD7IC2250N
Rev. 0, 12/2010
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
MD7IC2250NR1
MD7IC2250GNR1
MD7IC2250NBR1
The MD7IC2250N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2000 to 2200 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular
base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
DQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA, Pout = 5.3 Watts Avg.,
I
2110--2170 MHz, 5.3 W AVG., 28 V
SINGLE W--CDMA
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
RF LDMOS WIDEBAND
G
PAE
(%)
ACPR
(dBc)
INTEGRATED POWER AMPLIFIERS
ps
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
31.2
31.1
31.1
17.0
16.8
16.8
--48.3
--49.3
--50.1
CASE 1618--02
TO--270 WB--14
PLASTIC
MD7IC2250NR1
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout
Typical Pout @ 1 dB Compression Point ≃ 54 Watts CW
)
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
Features
MD7IC2250GNR1
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
•
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
CASE 1617--02
TO--272 WB--14
PLASTIC
•
•
•
•
•
Integrated ESD Protection
MD7IC2250NBR1
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
V
DS1A
V
1
2
DS1A
GS2A
V
V
RF
RF /V
out1 DS2A
inA
14
13
3
GS1A
RF
RF /V
out1 DS2A
4
inA
NC
NC
NC
NC
5
6
V
V
GS1A
GS2A
Quiescent Current
Temperature Compensation
7
(1)
(1)
8
9
10
11
12
RF
RF /V
out2 DS2B
inB
V
V
GS1B
GS2B
Quiescent Current
Temperature Compensation
V
GS1B
GS2B
V
V
DS1B
(Top View)
RF
inB
RF /V
out2 DS2B
Note: Exposed backside of the package is
the source terminal for the transistors.
V
DS1B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +65
--0.5, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
V
DSS
V
GS
DD
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
T
stg
-- 65 to +150
150
T
C
°C
(1,2)
T
225
°C
J
P
28
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 74°C, 5.3 W CW, 2170 MHz
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 80 mA
= 520 mA
5.3
1.1
DQ1(A+B)
DQ2(A+B)
Case Temperature 80°C, 50 W CW, 2170 MHz
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 80 mA
= 520 mA
5.0
0.95
DQ1(A+B)
DQ2(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
1A (Minimum)
A (Minimum)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 1 -- On Characteristics
(4)
Gate Threshold Voltage
V
V
1.2
—
2.0
2.7
7.0
2.7
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V = 10 Vdc, I = 23 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
= 80 mA)
DQ1(A+B)
DS
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 80 mA, Measured in Functional Test)
V
6.0
8.0
DD
DQ1(A+B)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 2 -- On Characteristics
(1)
Gate Threshold Voltage
V
V
1.2
—
2.0
2.7
2.7
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V = 10 Vdc, I = 150 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
= 520 mA)
DQ2(A+B)
DS
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 520 mA, Measured in Functional Test)
V
5.5
0.1
6.3
7.5
1.2
DD
DQ2(A+B)
(1)
Drain--Source On--Voltage
V
0.24
(V = 10 Vdc, I = 1 Adc)
GS
D
(2,3)
Functional Tests
(In Freescale Wideband 2110--2170 Test Fixture, 50 ohm system) V = 28 Vdc, I
= 80 mA,
DQ1(A+B)
DD
I
= 520 mA, P = 5.3 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
DQ2(A+B)
out
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G
30.0
15.0
—
31.1
16.8
34.0
—
dB
%
ps
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
PAE
ACPR
IRL
--50.1
--47.0
-- 9
dBc
dB
—
-- 1 4
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 80 mA, I
= 520 mA,
DQ2(A+B)
DD
DQ1(A+B)
P
= 5.3 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
out
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
G
PAE
(%)
ACPR
(dBc)
IRL
(dB)
ps
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
31.2
31.1
31.1
17.0
16.8
16.8
--48.3
--49.3
--50.1
-- 9
-- 11
-- 1 4
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 80 mA, I
= 520 mA,
DQ2(A+B)
DD
DQ1(A+B)
2110--2170 MHz Bandwidth
P
@ 1 dB Compression Point, CW
P1dB
IMD
—
—
54
16
—
—
W
out
IMD Symmetry @ 50 W PEP, P where IMD Third Order
MHz
out
sym
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
70
—
MHz
%
res
(1,2)
Quiescent Current Accuracy over Temperature
∆I
QT
with 4.7 kΩ Gate Feed Resistors (--30 to 85°C)
Stage 1
Stage 2
—
—
1.5
5.0
—
—
Gain Flatness in 60 MHz Bandwidth @ P = 5.3 W Avg.
G
—
—
0.1
—
—
dB
out
F
Gain Variation over Temperature
∆G
0.028
dB/°C
(--30°C to +85°C)
Output Power Variation over Temperature
∆P1dB
—
0.028
—
dB/°C
(--30°C to +85°C)
1. Each side of device measured separately.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or
AN1987.
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
4
V
D1A
V
G2A
V
D2
C7
R2
C5
C1
C12
C18
C14
C9
V
G1A
C3
R1
C16
C21
C11
C20
C17
C10
C15
MD7IC2250N
Rev. 2
C19
C13
R3
C4
V
G1B
C6
C2
R4
V
C8
D2
V
G2B
V
D1B
Figure 3. MD7IC2250NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MD7IC2250NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
10 μF Chip Capacitors
5.6 pF Chip Capacitors
2.0 pF Chip Capacitors
33 pF Chip Capacitor
1.0 μF Chip Capacitors
4.7 μF Chip Capacitors
1.8 pF Chip Capacitor
1.5 pF Chip Capacitor
4.7 kΩ Chip Resistors
Part Number
GRM55DR61H106KA88L
ATC600F5R6BT250XT
ATC600F2R0BT250XT
ATC600F330JT250XT
GRM31MR71H105KA88L
GRM31CR71H475KA12L
ATC600F1R8BT250XT
ATC100B1R5BT500XT
CRCW12064K70FKEA
RF35A2
Manufacturer
C1, C2, C3, C4
Murata
C5, C6, C7, C8
ATC
C9, C10
ATC
C11
ATC
C12, C13
Murata
Murata
ATC
C14, C15, C16, C17, C18, C19
C20
C21
ATC
R1, R2, R3, R4
PCB
Vishay
Taconic
0.020″, ε = 3.5
r
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
5
Single--ended
λ
4
Quadrature combined
λ
4
λ
4
Doherty
λ
λ
2
Push--pull
2
Figure 4. Possible Circuit Topologies
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
31.7
31.6
31.5
31.4
31.3
31.2
31.1
31
16.8
16.6
16.4
16.2
16
V
= 28 Vdc, P = 5.3 W (Avg.), I
= 80 mA
DD
out
DQ1(A+B)
I
= 520 mA
DQ2(A+B)
G
ps
PAE
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
-- 4 7
-- 4 8
-- 4 9
-- 5 0
-- 5 1
-- 5 2
-- 5
-- 9
-- 1 3
-- 1 7
-- 2 1
-- 2 5
ACPR
30.9
30.8
30.7
IRL
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 5. Power Gain, Power Added Efficiency, IRL and ACPR
Broadband Performance @ Pout = 5.3 Watts Avg.
-- 10
V
= 28 Vdc, P = 50 W (PEP), I
= 80 mA
DD
out
DQ1(A+B)
I
= 520 mA, Two--Tone Measurements
DQ2(A+B)
-- 20
-- 30
-- 40
-- 50
-- 6 0
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
IM3--L
IM5--L
IM5--U
IM7--L
IM7--U
1
10
100
TWO--TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 2 0
33
32.5
32
1
0
60
V
= 28 Vdc, I
= 80 mA, I
= 520 mA
DD
DQ1(A+B)
DQ2(A+B)
f = 2140 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
50
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
G
ps
-- 1
-- 2
40
30
20
10
0
-- 2 d B = 1 8 W
31.5
31
-- 1 d B = 1 3 W
-- 3
-- 4
PARC
-- 3 d B = 2 4 W
PAE
30.5
30
ACPR
-- 5
5
10
15
20
25
30
P
, OUTPUT POWER (WATTS)
out
Figure 7. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
36
60
0
V
= 28 Vdc, I
= 80 mA, I
= 520 mA
DD
DQ1(A+B)
DQ2(A+B)
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
34
32
30
28
26
24
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
50
40
30
20
10
0
PAE
ACPR
2110 MHz
2140 MHz
2170 MHz
2170 MHz
2140 MHz
2110 MHz
G
ps
1
10
, OUTPUT POWER (WATTS) AVG.
100
P
out
Figure 8. Single--Carrier W--CDMA Power Gain, Power
Added Efficiency and ACPR versus Output Power
40
10
0
35
30
25
Gain
IRL
-- 1 0
-- 2 0
V
P
= 28 Vdc
= 0 dBm
-- 3 0
--40
-- 5 0
20
DD
in
I
I
= 80 mA
= 520 mA
DQ1(A+B)
DQ2(A+B)
15
10
1500 1650 1800 1950 2100 2250
2400 2550 2700
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
8
W--CDMA TEST SIGNAL
100
10
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
-- 5 0
-- 6 0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
0.001
-- 7 0
-- 8 0
0.0001
0
1
2
3
4
5
6
7
8
9
10
-- 9 0
PEAK--TO--AVERAGE (dB)
--100
Figure 10. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
-- 9 -- 7 . 2 -- 5 . 4 -- 3 . 6 -- 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 11. Single--Carrier W--CDMA Spectrum
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
9
V
= 28 Vdc, I
, I
= 520 mA, P = 5.3 W Avg.
DD
DQ1(A+B) = 80 mA DQ2(A+B) out
f
Z
Z
load
source
MHz
Ω
Ω
2060
2080
2100
2120
2140
2160
2180
2200
2220
17.0 + j4.49
17.2 + j4.94
17.4 + j5.41
17.7 + j5.88
17.9 + j6.36
18.2 + j6.84
18.4 + j7.33
18.7 + j7.84
19.0 + j8.35
5.12 -- j3.98
5.07 -- j4.10
5.00 -- j4.23
4.90 -- j4.36
4.76 -- j4.88
4.59 -- j4.60
4.38 -- j4.69
4.15 -- j4.77
3.91 -- j4.82
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 12. Series Equivalent Source and Load Impedance
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
10
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
V
= 28 Vdc, I
= 40 mA, I
= 260 mA, Pulsed CW,
DD
DQ1A
DQ2A
10 μsec(on), 10% Duty Cycle
51
50
49
48
47
46
45
44
43
42
Ideal
Actual
2170 MHz 2110 MHz
2140 MHz
2140 MHz
2170 MHz
2110 MHz
41
40
9
10
11 12 13 14 15 16
P , INPUT POWER (dBm)
17 18 19 20
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
Watts
P3dB
Watts
f
dBm
45.8
45.7
45.7
dBm
46.4
46.4
46.4
(MHz)
2110
2140
2170
38
37
37
44
44
44
Test Impedances per Compression Level
f
Z
Z
load
source
(MHz)
Ω
Ω
2110
2140
2170
P1dB
P1dB
P1dB
65.6 + j43.6
58.7 + j39.7
52.4 + j32.5
7.09 -- j14.1
6.88 -- j14.0
6.99 -- j14.5
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
Note: Measurement made on a single path of the device under Class AB conditions.
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
12
RF Device Data
Freescale Semiconductor
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
13
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
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MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
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MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
16
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
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MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
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MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
19
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
20
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
•
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2010
• Initial Release of Data Sheet
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
21
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