MD7IC2251NR1 [FREESCALE]
RF LDMOS Wideband Integrated Power Amplifiers; RF LDMOS宽带集成功率放大器
| 型号： | MD7IC2251NR1 |
| 厂家： | 
Freescale |
| 描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 文件： | 总17页 (文件大小：718K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MD7IC2251N
Rev. 0, 5/2012
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
MD7IC2251NR1
MD7IC2251GNR1
The MD7IC2251N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2110--2170 MHz. This multi--stage
structure is rated for 26 to 32 volt operation and covers all typical cellular
base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
DD = 28 Volts, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc,
V
2110--2170 MHz, 12 W AVG., 28 V
SINGLE W--CDMA
Pout = 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
G
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
28.8
29.0
29.2
38.2
37.9
37.4
7.1
7.1
6.9
--34.6
--36.2
--36.1
TO--270 WB--14
PLASTIC
MD7IC2251NR1
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout
Typical Pout @ 3 dB Compression Point ≃ 58 Watts (1)
)
TO--270 WB--14 GULL
PLASTIC
MD7IC2251GNR1
Features
•
•
•
•
•
•
•
•
100% PAR Tested for Guaranteed Output Power Capability
Production Tested in a Symmetrical Doherty Configuration
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)
Integrated ESD Protection
225°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
V
DS1A
Carrier
(3)
CARRIER
RF /V
V
1
2
DS1A
GS2A
V
V
RF
inA
out1 DS2A
14
13
3
GS1A
RF
RF /V
out1 DS2A
4
inA
NC
NC
NC
NC
5
6
V
V
GS1A
GS2A
Quiescent Current
Temperature Compensation
7
(2)
(2)
8
RF
9
RF /V
out2 DS2B
inB
V
V
GS1B
GS2B
Quiescent Current
Temperature Compensation
V
10
11
GS1B
GS2B
V
V
12 Peaking
DS1B
(3)
PEAKING
RF /V
(Top View)
RF
inB
out2 DS2B
Note: Exposed backside of the package is
the source terminal for the transistors.
V
DS1B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. P3dB =P +7.0 dB whereP
is the averageoutput power measured using an unclipped W--CDMA single--carrier input signal where output
avg
avg
PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/ApplicationNotes -- AN1977 orAN1987.
3. Peaking and Carrier orientation is determined by the test fixture design.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +65
--0.5, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
V
DS
V
GS
V
DD
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
T
stg
-- 65 to +150
150
T
C
°C
(1,2)
T
225
°C
J
P
28
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Final Doherty Application
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 78°C, P = 12 W CW
out
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 80 mA
= 260 mA, V
4.8
1.5
DQ1(A+B)
= 1.4 Vdc
= 1.4 Vdc
DQ2A
GS2B
Case Temperature 89°C, P = 50 W CW
out
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 80 mA
3.7
1.0
DQ1(A+B)
= 260 mA, V
DQ2A
GS2B
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
1A
A
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
II
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
(4)
Stage 1 -- On Characteristics
Gate Threshold Voltage
V
V
1.2
—
2.0
2.7
7.0
2.7
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V = 10 Vdc, I = 23 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
= 80 mAdc)
DQ1(A+B)
DS
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 80 mAdc, Measured in Functional Test)
V
6.0
8.0
DD
DQ1(A+B)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
(1)
Stage 2 -- On Characteristics
Gate Threshold Voltage
V
1.2
—
2.0
2.7
2.7
—
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 150 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
V
GSA(Q)
= 260 mAdc)
DQ2A
DS
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 260 mAdc, Measured in Functional Test)
V
5.5
0.1
6.3
7.5
1.2
Vdc
GGA(Q)
DD
DQ2A
Drain--Source On--Voltage
V
0.24
Vdc
DS(on)
(V = 10 Vdc, I = 1 Adc)
GS
D
(2,3,4)
Functional Tests
(In Freescale Doherty Production Test Fixture, 50 ohm system) V = 28 Vdc, I
= 80 mA, I = 260 mA,
DQ2A
DD
DQ1(A+B)
V
= 1.4 Vdc, P = 12 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
GS2B
out
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G
27.6
33.5
6.2
28.2
36.9
6.6
32.0
—
dB
%
ps
Power Added Efficiency
PAE
PAR
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
—
dB
ACPR
—
--34.2
--31.5
dBc
Typical Broadband Performance (In Freescale Doherty Characterization Test Fixture, 50 ohm system) V = 28 Vdc, I
= 80 mA,
DQ1(A+B)
DD
I
= 260 mA, V
= 1.4 Vdc, P = 12 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
GS2B out
DQ2A
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
G
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
28.8
29.0
29.2
38.2
37.9
37.4
7.1
7.1
6.9
--34.6
--36.2
--36.1
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Typical Performances
1.4 Vdc, 2110--2170 MHz Bandwidth
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 80 mA, I
= 260 mA, V
=
GS2B
DD
DQ1(A+B)
DQ2A
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
—
—
40
58
25
—
—
—
W
W
out
out
(2)
@ 3 dB Compression Point
IMD Symmetry @ 18 W PEP, P where IMD Third Order
IMD
MHz
out
sym
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
65
—
MHz
%
res
Quiescent Current Accuracy over Temperature
with 4.7 kΩ Gate Feed Resistors (--30 to 85°C)
∆I
QT
(3)
Stage 1
Stage 2
—
—
1.5
5.0
—
—
Gain Flatness in 60 MHz Bandwidth @ P = 12 W Avg.
G
—
—
0.2
—
—
dB
out
F
Gain Variation over Temperature
∆G
0.028
dB/°C
(--30°C to +85°C)
Output Power Variation over Temperature
∆P1dB
—
0.028
—
dB/°C
(--30°C to +85°C)
1. Measurement made with device in a Symmetrical Doherty configuration.
2. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
V
V
V
V
DS1A
DS2A
GS1A
GS2A
C1
R2
C9
C7
C13
C23
R1
C3
C11
C4
C19
C15
C16
C
P
Z1
R5
C17
C20
C18
C8
C21
C12
C5
MD7IC2251N
Rev. 1
C6
R3
C22
C14
C10
R4
C2
V
DS2B
V
V
V
DS1B
GS1B
GS2B
Figure 3. MD7IC2251NR1(GNR1) Production Test Circuit Component Layout
Table 6. MD7IC2251NR1(GNR1) Production Test Circuit Component Designations and Values
Part
Description
Part Number
GRM55DR61H106KA88L
ATC600F4R7BT250XT
ATC600F5R6BT250XT
ATC600F390JT250XT
GRM31CR71H475KA12L
ATC600F0R5BT250XT
ATC600F0R9BT250XT
GRM31CR71H105KA12L
CRCW12064K70FKEA
RFP-06012A15Z50
Manufacturer
Murata
C1, C2, C3, C4, C5, C6
10 μF Chip Capacitors
C7, C8
4.7 pF Chip Capacitors
ATC
C9, C10
5.6 pF Chip Capacitors
ATC
C11, C12
39 pF Chip Capacitors
ATC
C13, C14, C15, C16, C17, C18
4.7 μF Chip Capacitors
Murata
ATC
C19, C20
C21
0.5 pF Chip Capacitors
0.9 pF Chip Capacitor
ATC
C22, C23
R1, R2, R3, R4
R5
1.0 μF Chip Capacitors
Murata
Vishay
Anaren
Soshin
Taconic
4.7 kΩ, 1/4 W Chip Resistors
50 Ω, 10 W, Termination
2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler
Z1
GSC355-HYB2150
PCB
0.020″, ε = 3.5
RF-35A2
r
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
V
V
V
V
DS1A
DS2A
GS1A
GS2A
C1
R2
C9
C7
C13
C23
R1
C3
C11
C4
C19
C15
C16
C
P
Z1
R5
C17
C20
C18
C8
C21
C12
C5
MD7IC2251N
Rev. 1
C6
R3
C22
C14
C10
R4
C2
V
DS2B
V
V
V
DS1B
GS1B
GS2B
Figure 4. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Layout
Table 7. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Designations and Values
Part
Description
Part Number
GRM55DR61H106KA88L
ATC600F4R7BT250XT
ATC600F5R6BT250XT
ATC600F390JT250XT
GRM31CR71H475KA12L
ATC600F0R5BT250XT
ATC600F0R9BT250XT
GRM31CR71H105KA12L
CRCW12064K70FKEA
RFP-06012A15Z50
Manufacturer
Murata
C1, C2, C3, C4, C5, C6
10 μF Chip Capacitors
C7, C8
4.7 pF Chip Capacitors
ATC
C9, C10
5.6 pF Chip Capacitors
ATC
C11, C12
39 pF Chip Capacitors
ATC
C13, C14, C15, C16, C17, C18
4.7 μF Chip Capacitors
Murata
ATC
C19, C20
C21
0.5 pF Chip Capacitors
0.9 pF Chip Capacitor
ATC
C22, C23
R1, R2, R3, R4
R5
1.0 μF Chip Capacitors
Murata
Vishay
Anaren
Soshin
Taconic
4.7 kΩ, 1/4 W Chip Resistors
50 Ω, 10 W, Termination
2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler
Z1
GSC355-HYB2150
PCB
0.020″, ε = 3.5
RF-35A2
r
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS
31
30.6
30.2
29.8
29.4
29
39
PAE
37
V
= 28 Vdc, P = 12 W (Avg.)
out
DD
35
I
= 80 mA, I
= 260 mA
DQ1(A+B)
DQ2A
V
GS2B
= 1.4 Vdc, Single--Carrier W--CDMA
33
3.84 MHz Channel Bandwidth
31
G
ps
-- 3 0
-- 3 2
-- 3 4
-- 3 6
-- 3 8
-- 4 0
0
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
28.6
28.2
27.8
27.4
27
-- 1
-- 2
-- 3
-- 4
-- 5
ACPR
PARC
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 5. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 12 Watts Avg.
-- 20
IM3--L
-- 30
IM3--U
-- 40
IM5--U
IM5--L
-- 50
V
= 28 Vdc, P = 18 W (PEP)
out
DD
I
= 80 mA, I
= 260 mA
-- 60 DQ1(A+B)
= 1.4 Vdc, Two--Tone Measurements
DQ2A
V
IM7--U IM7--L
GS2B
(f1 + f2)/2 = Center Frequency of 2140 MHz
-- 7 0
1
10
100
TWO--TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 2 0
0
-- 1
-- 2
30
29
28
27
26
25
24
50
G
ps
PAE
46
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
--1 dB = 7.2 W
--2 dB = 9.9 W
ACPR
42
38
34
30
26
V
DQ2A
= 28 Vdc, I
= 80 mA
= 1.4 Vdc
GS2B
DD
DQ1(A+B)
-- 3
-- 4
I
= 260 mA, V
f = 2140 MHz, Single--Carrier
W--CDMA
--3 dB = 12.5 W
-- 5
-- 6
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
PARC
5
10
15
20
25
30
P
, OUTPUT POWER (WATTS)
out
Figure 7. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS
31
30
29
60
-- 2 0
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
V
= 28 Vdc, I
= 260 mA, V
= 80 mA
= 1.4 Vdc
GS2B
ACPR
PAE
DD
DQ1(A+B)
I
DQ2A
50
40
Single--Carrier W--CDMA
2140 MHz
2110 MHz
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability
on CCDF
30
20
10
0
28
27
26
2170 MHz
2110 MHz
2140 MHz
2170 MHz
G
ps
25
1
10
, OUTPUT POWER (WATTS) AVG.
100
P
out
Figure 8. Single--Carrier W--CDMA Power Gain, Power
Added Efficiency and ACPR versus Output Power
36
30
Gain
24
18
V
P
= 28 Vdc
= 0 dBm
DD
12
in
I
I
V
= 80 mA
= 260 mA
= 1.4 Vdc
DQ1(A+B)
6
0
DQ2A
GS2B
1800 1900 2000
2100 2200 2300 2400
f, FREQUENCY (MHz)
2500 2600
Figure 9. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
-- 5 0
-- 6 0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
0.001
-- 7 0
-- 8 0
0.0001
0
2
4
6
8
10
12
-- 9 0
PEAK--TO--AVERAGE (dB)
--100
Figure 10. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
-- 9 -- 7 . 2 -- 5 . 4 -- 3 . 6 -- 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 11. Single--Carrier W--CDMA Spectrum
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
8
V
= 28 Vdc, I
= 80 mA, I = 260 mA, CW
DQ2A
DD
DQ1(A+B)
Max Output Power
P1dB
(W)
38
P3dB
(W)
44
(1)
f
Z
(Ω)
Z
load
(Ω)
in
(dBm)
45.8
PAE (%)
52.2
(dBm)
46.4
PAE (%)
53.1
(MHz)
2110
2140
2170
68.0 – j42.0
60.6 – j37.0
54.0 – j31.0
7.20 – j14.0
7.40 – j14.4
7.30 – j14.7
45.7
37
51.9
46.4
44
52.7
45.7
37
51.6
46.4
44
52.2
(1) Load impedance for optimum P1dB power.
Z
Z
= Impedance as measured from input contact to ground.
= Impedance as measured from drain contact to ground.
in
load
Output
Load Pull
Tuner
Device
Under
Test
Z
load
Z
in
Figure 12. Carrier Side Load Pull Performance — Maximum P1dB Tuning
V
= 28 Vdc, I
= 80 mA, I
= 260 mA, CW
DD
DQ1(A+B)
DQ2A
Max Power Added Efficiency
P1dB P3dB
(1)
f
Z
in
Z
load
(dBm)
44.4
(W)
28
PAE (%)
58.1
(dBm)
45.0
(W)
32.0
31.0
32.0
PAE (%)
57.6
(MHz)
2110
2140
2170
(Ω)
(Ω)
60.0 – j53.0
54.0 – j46.0
48.0 – j39.0
9.10 – j8.80
8.20 – j9.10
7.90 – j9.60
44.4
28
57.6
44.9
57.0
44.4
28
57.4
45.0
56.7
(1) Load impedance for optimum P1dB efficiency.
Z
Z
= Impedance as measured from input contact to ground.
= Impedance as measured from drain contact to ground.
in
load
Output
Load Pull
Tuner
Device
Under
Test
Z
load
Z
in
Figure 13. Carrier Side Load Pull Performance — Maximum Power Added Efficiency Tuning
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
10
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
12
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
14
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
•
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
•
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2012
• Initial Release of Data Sheet
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
16
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
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Freescale, the Freescale logo, AltiVec, C--5, CodeTest, CodeWarrior, ColdFire,
C--Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor
Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of
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are the property of their respective owners.
E 2012 Freescale Semiconductor, Inc.
Document Number: MD7IC2251N
Rev.0, 5/2012
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