MMA20312B [FREESCALE]
Heterojunction Bipolar Transistor Technology (InGaP HBT); 异质结双极晶体管技术（的InGaP HBT ）
| 型号： | MMA20312B |
| 厂家： | 
Freescale |
| 描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| 文件： | 总15页 (文件大小：791K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMA20312B
Rev. 1.1, 3/2011
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMA20312BT1
High Efficiency/Linearity Amplifier
The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier
designed for use as a linear driver amplifier in wireless base station applications
as well as an output stage in femto cell or repeater applications. It is suitable for
applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA,
PCS, UMTS and LTE. The amplifier is housed in a low--cost, surface mount
QFN plastic package.
1800--2200 MHz, 27.2 dB
30.5 dBm
•
Typical Performance: VCC = 5 Volts, ICQ = 70 mA, Pout = 17 dBm
InGaP HBT
G
ACPR
(dBc)
PAE
(%)
ps
Frequency
1880 MHz
1920 MHz
2010 MHz
2025 MHz
2140 MHz
(dB)
29.0
29.0
27.4
26.8
27.0
Test Signal
TD--SCDMA
TD--SCDMA
TD--SCDMA
TD--SCDMA
W--CDMA
--47.4
--46.7
--52.0
--50.0
--51.7
9.1
9.0
9.3
9.5
9.4
CASE 2131--01
QFN 3x3
Features
PLASTIC
•
•
•
•
•
•
•
•
•
Active Bias Control (On--chip)
Frequency: 1800--2200 MHz
P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
Single 5 Volt Supply
Low Cost QFN Surface Mount Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Table 1. Typical CW Performance (1)
1800
Table 2. Maximum Ratings
Rating
Supply Voltage
Symbol
Value
Unit
V
2140
MHz
2200
MHz Unit
Characteristic
Symbol
MHz
V
6
550
CC
CC
Small--Signal Gain
(S21)
G
28.8
26.4
25.5
dB
dB
dB
p
Supply Current
I
mA
dBm
°C
RF Input Power
P
14
in
Input Return Loss
(S11)
IRL
ORL
P1db
--17.6
--20.3
30.5
--10.9
-- 9 . 7
Storage Temperature Range
T
stg
--65 to +150
150
(2)
Junction Temperature
T
J
°C
Output Return Loss
(S22)
--14.7 --13.7
2. For reliable operation, the junction temperature should not
exceed 150°C.
Power Output @1dB
Compression
30.5
30.5 dBm
1. V
= V
= V
= 5 Vdc, T = 25°C, 50 ohm system, CW
CTRL A
CC1
CC2
Application Circuit
Table 3. Thermal Characteristics
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
52
°C/W
JC
Case Temperature 86°C, V = V
= V
= 5 Vdc
CTRL
CC1
CC2
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
Table 4. Electrical Characteristics (V
= V
= V
= 5 Vdc, 2140 MHz, T = 25°C, 50 ohm system, in Freescale W--CDMA
CTRL A
CC1
CC2
Application Circuit)
Characteristic
Symbol
Min
23.6
—
Typ
27.2
--10.7
--15.5
28.2
44.5
3.3
Max
—
Unit
dB
(1)
Small--Signal Gain (S21)
G
p
Input Return Loss (S11)
IRL
ORL
P1dB
OIP3
NF
—
dB
Output Return Loss (S22)
—
—
dB
Power Output @ 1dB Compression, CW
—
—
dBm
dBm
dB
Third Order Output Intercept Point, Two--Tone CW
Noise Figure
—
—
—
—
(1,2)
Supply Current
I
62.5
—
70
77
—
mA
V
CQ
(2)
Supply Voltage
V
5
CC
Table 5. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD 22--A114)
Class
0 (Minimum), rated to 150 V
A (Minimum)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
III (Minimum)
Table 6. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
1. Specified data is based on performance of soldered down part in W--CDMA application circuit.
2. For reliable operation, the junction temperature should not exceed 150°C.
V
V
V
CC1
BA2
CC1
V
V
V
BA2 CC1 CC1
RF
RF
V
out
out
B1
12 11 10
BIAS
CIRCUIT
V
1
2
3
9
8
7
RF
B1
out
V
V
RF
BIAS
BIAS
out
V
RF
CC2
in
4
5
6
RF
V
in
CC2
GND GND GND
GND
GND
GND
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MMA20312BT1
RF Device Data
Freescale Semiconductor
2
V
CTRL
Z5
V
CC1
R1
C6
R2
C7
C8
Z4
C17
C18
C19
12
11
10
1
2
9
8
C5
BIAS
CIRCUIT
RF
OUTPUT
Z2
Z3
C4
C3
RF
INPUT
Z1
3
7
C1
Z6
L1
C2
V
CC2
4
5
6
C13
C16
Note: Component numbers C9, C10, C11, C12, C14, and C15 are not used.
Z1
Z2
Z3
0.250″ x 0.030″ Microstrip
0.035″ x 0.030″ Microstrip
0.283″ x 0.030″ Microstrip
Z4
Z5
Z6
0.080″ x 0.030″ Microstrip
0.155″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
Figure 3. MMA20312BT1 Test Circuit Schematic -- TD--SCDMA
Table 7. MMA20312BT1 Test Circuit Component Designations and Values -- TD--SCDMA
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5
C2
1.8 pF Chip Capacitor
2.2 pF Chip Capacitor
5.6 pF Chip Capacitor
10 pF Chip Capacitors
1 μF Chip Capacitors
10 μF Chip Capacitors
0.1 μF Chip Capacitor
1.8 nH Chip Inductor
120 Ω Chip Resistor
1300 Ω Chip Resistor
06035J1R8BBS
AVX
C3
06035J2R2BBS
AVX
C4
06035J5R6BBS
AVX
C6, C7, C13
C8, C18
C16, C19
C17
06035J100GBS
AVX
GRM188R61A105KA61
GRM188R60J106ME47
GRM188R71H104KA93
LL1608--FS1N8S
RR0816Q--121--D
RR0816Q--132--D
FR408
Murata
Murata
Murata
TOKO
Susumu
Susumu
ISOLA
L1
R1
R2
PCB
0.014″, ε = 3.7
r
MMA20312BT1
RF Device Data
Freescale Semiconductor
3
C8
C19
R1
R2
C7
C17 C18
C6
RF
RF
OUT
IN
C5
L1
C3
C4
C1
C2
C13
C16
QFN 3x3--12B
Rev. 0
Note: Component numbers C9, C10, C11, C12, C14, and C15 are not used.
Figure 4. MMA20312BT1 Test Circuit Component Layout -- TD--SCDMA
Table 7. MMA20312BT1 Test Circuit Component Designations and Values -- TD--SCDMA
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5
C2
1.8 pF Chip Capacitor
2.2 pF Chip Capacitor
5.6 pF Chip Capacitor
10 pF Chip Capacitors
1 μF Chip Capacitors
10 μF Chip Capacitors
0.1 μF Chip Capacitor
1.8 nH Chip Inductor
120 Ω Chip Resistor
1300 Ω Chip Resistor
06035J1R8BBS
AVX
C3
06035J2R2BBS
AVX
C4
06035J5R6BBS
AVX
C6, C7, C13
C8, C18
C16, C19
C17
06035J100GBS
AVX
GRM188R61A105KA61
GRM188R60J106ME47
GRM188R71H104KA93
LL1608--FS1N8S
RR0816Q--121--D
RR0816Q--132--D
FR408
Murata
Murata
Murata
TOKO
Susumu
Susumu
ISOLA
L1
R1
R2
PCB
0.014″, ε = 3.7
r
(Component Designations and Values table repeated for reference.)
MMA20312BT1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS — TD--SCDMA
0
-- 5
35
30
-- 4 0 °C
25°C
-- 4 0 °C
85°C
-- 10
-- 15
-- 20
-- 25
-- 30
-- 3 5
25
20
15
10
5
85°C
25°C
V
= V
= V
= 5 Vdc
CTRL
V
= V
= V
= 5 Vdc
CTRL
CC1
CC2
CC1
CC2
0
1500
1750
2000
2250
2500
2750
1500
1750
2000
2250
2500
2750
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S21 versus Frequency versus
Temperature
0
-- 5
-- 4 0 °C
85°C
-- 10
-- 15
-- 20
-- 25
-- 30
-- 3 5
25°C
V
= V
= V
= 5 Vdc
CTRL
CC1
CC2
1500
1750
2000
2250
2500
2750
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMA20312BT1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — TD--SCDMA
200
180
160
140
120
100
80
-- 10
-- 15
-- 20
-- 25
-- 30
-- 35
V
= V
= V
= 5 Vdc
CTRL
CC1
CC2
f = 2017.5 MHz
25°C
85°C
I
CC
-- 4 0 °C
-- 40
-- 45
60
85°C
ACPR
40
-- 50
-- 55
-- 4 0 °C
20
0
23
25°C
19
-- 60
7
9
11
13
15
17
21
P
, OUTPUT POWER (dBm)
out
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
30
29
28
27
26
25
24
50
45
40
35
30
25
20
15
10
Gain
-- 4 0 °C
25°C
85°C
V
= V
= V
= 5 Vdc
CTRL
CC1
CC2
-- 4 0 °C
85°C
f = 2017.5 MHz
23
22
PAE
21
20
5
0
25°C
7
9
11
13
15
17
19
21
23
P
, OUTPUT POWER (dBm)
out
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
31
V
= V
= V
= 5 Vdc
CTRL
CC1
CC2
30
29
28
27
26
-- 4 0 °C
85°C
25°C
25
24
1800
1850
1900
1950
2000
2050
f, FREQUENCY (MHz)
Figure 10. P1dB versus Frequency versus
Temperature, CW
MMA20312BT1
RF Device Data
Freescale Semiconductor
6
V
CTRL
Z5
V
CC1
R1
C6
R2
C7
C8
Z4
C9
C17
C18
C19
12
11
10
1
2
9
8
C5
BIAS
CIRCUIT
RF
OUTPUT
Z2
Z3
C4
C3
RF
INPUT
Z1
3
7
C1
Z6
L1
C2
V
CC2
4
5
6
C13
C16
Note: Component numbers C10, C11, C12, C14, and C15 are not used.
Z1
Z2
Z3
0.218″ x 0.030″ Microstrip
0.068″ x 0.030″ Microstrip
0.250″ x 0.030″ Microstrip
Z4
Z5
Z6
0.080″ x 0.030″ Microstrip
0.155″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
+
Figure 11. MMA20312BT1 Test Circuit Schematic -- W--CDMA
Table 8. MMA20312BT1 Test Circuit Component Designations and Values -- W--CDMA
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5, C9
C2, C3
C4
1.8 pF Chip Capacitors
5.6 pF Chip Capacitor
10 pF Chip Capacitors
1 μF Chip Capacitors
10 μF Chip Capacitors
0.1 μF Chip Capacitor
1.8 nH Chip Inductor
120 Ω Chip Resistor
1500 Ω Chip Resistor
06035J1R8BBS
AVX
06035J5R6BBS
AVX
C6, C7, C13
C8, C18
C16, C19
C17
06035J100GBS
AVX
GRM188R61A105KA61
GRM188R60J106ME47
GRM188R71H104KA93
LL1608--FS1N8S
RR0816Q--121--D
RR0816Q--152−D
FR408
Murata
Murata
Murata
TOKO
Susumu
Susumu
ISOLA
L1
R1
R2
PCB
0.014″, ε = 3.7
r
MMA20312BT1
RF Device Data
Freescale Semiconductor
7
C8
C19
R1
R2
C7
C9
C17 C18
C6
RF
RF
OUT
IN
C5
L1
C3
C4
C1
C2
C13
C16
QFN 3x3--12B
Rev. 0
Note: Component numbers C10, C11, C12, C14, and C15 are not used.
Figure 12. MMA20312BT1 Test Circuit Component Layout -- W--CDMA
Table 8. MMA20312BT1 Test Circuit Component Designations and Values -- W--CDMA
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5, C9
C2, C3
C4
1.8 pF Chip Capacitors
5.6 pF Chip Capacitor
10 pF Chip Capacitors
1 μF Chip Capacitors
10 μF Chip Capacitors
0.1 μF Chip Capacitor
1.8 nH Chip Inductor
120 Ω Chip Resistor
1500 Ω Chip Resistor
06035J1R8BBS
AVX
06035J5R6BBS
AVX
C6, C7, C13
C8, C18
C16, C19
C17
06035J100GBS
AVX
GRM188R61A105KA61
GRM188R60J106ME47
GRM188R71H104KA93
LL1608--FS1N8S
RR0816Q--121--D
RR0816Q--152−D
FR408
Murata
Murata
Murata
TOKO
Susumu
Susumu
ISOLA
L1
R1
R2
PCB
0.014″, ε = 3.7
r
(Component Designations and Values table repeated for reference.)
MMA20312BT1
RF Device Data
Freescale Semiconductor
8
TYPICAL CHARACTERISTICS — W--CDMA
200
180
160
140
120
100
80
-- 10
-- 15
-- 20
-- 25
-- 30
-- 35
V
= V
= V
= 5 Vdc
CTRL
CC1
CC2
f = 2140 MHz
I
CC
-- 40
-- 45
60
ACPR
40
-- 50
-- 55
20
0
24
-- 60
8
10
12
14
16
18
20
22
P
, OUTPUT POWER (dBm)
out
Figure 13. ACPR versus Collector Current
versus Output Power
30
29
28
27
26
25
24
50
45
40
35
30
25
20
15
10
V
= V
= V
= 5 Vdc
CTRL
CC1
CC2
f = 2140 MHz
Gain
PAE
23
22
21
20
5
0
8
10
12
14
16
18
20
22
24
P
, OUTPUT POWER (dBm)
out
Figure 14. Power Gain versus Power Added
Efficiency versus Output Power
31
30
29
28
27
26
V
= V
= V
= 5 Vdc
CTRL
CC1
CC2
25
24
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 15. P1dB versus Frequency, CW
MMA20312BT1
RF Device Data
Freescale Semiconductor
9
3.00
0.70
2.00
0.30
3.40
0.50
1.6 x 1.6 Solder Pad
with Thermal Via
Structure
Figure 16. PCB Pad Layout for QFN 3x3
MA01
YWZ
Figure 17. Product Marking
MMA20312BT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MMA20312BT1
RF Device Data
Freescale Semiconductor
11
MMA20312BT1
RF Device Data
Freescale Semiconductor
12
MMA20312BT1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, tools and software to aid your design process.
Application Notes
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
•
•
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Oct. 2010
Mar. 2011
•
Initial Release of Data Sheet
•
•
•
Added “OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)” to Features list, p. 1
Typical CW Performance table: removed OIP3, p. 1
Figs. 4 and 12, Test Circuit Component Layout, updated component part layout identifier to reflect package
type. Changed from MMA20312B to QFN 3x3--12B, p. 4, 8
1.1
Mar. 2011
•
Updated device descriptor box to reflect W--CDMA application circuit small--signal gain value, p. 1
MMA20312BT1
RF Device Data
Freescale Semiconductor
14
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Document Number: MMA20312B
Rev. 1.1, 3/2011
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