MMG3014NT1_08 [FREESCALE]
Heterojunction Bipolar Transistor Technology (InGaP HBT); 异质结双极晶体管技术（的InGaP HBT ）
| 型号： | MMG3014NT1_08 |
| 厂家： | 
Freescale |
| 描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| 文件： | 总17页 (文件大小：436K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMG3014NT1
Rev. 1, 9/2008
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3014NT1
Broadband High Linearity Amplifier
The MMG3014NT1 is a General Purpose Amplifier that is internally
input matched and internally output prematched. It is designed for a broad
range of Class A, small-signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 40 to 4000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small-signal RF.
40-4000 MHz, 19.5 dB
25 dBm
InGaP HBT
Features
• Frequency: 40-4000 MHz
• P1dB: 25 dBm @ 900 MHz
• Small-Signal Gain: 19.5 dB @ 900 MHz
• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
• Single 5 Volt Supply
1
2
3
CASE 1514-02, STYLE 1
SOT-89
• Active Bias
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
PLASTIC
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Supply Voltage
Symbol
Value
Unit
V
Characteristic
Symbol 900 2140 3500 Unit
MHz MHz
MHz
V
6
300
CC
CC
Small-Signal Gain
(S21)
G
19.5
-25
-11
25
15
-12
−13
10
dB
dB
p
Supply Current
I
mA
dBm
°C
RF Input Power
P
in
15
Input Return Loss
(S11)
IRL
ORL
P1db
IP3
-8
-19
25
Storage Temperature Range
T
stg
-65 to +150
150
(2)
Junction Temperature
T
J
°C
Output Return Loss
(S22)
dB
2. For reliable operation, the junction temperature should not
exceed 150°C.
Power Output @1dB
Compression
25.8
dBm
dBm
Third Order Output
Intercept Point
40.5 40.5
40
1. V = 5 Vdc, T = 25°C, 50 ohm system, in Freescale
CC
C
Application Circuits.
Table 3. Thermal Characteristics (V = 5 Vdc, I = 135 mA, T = 25°C)
CC
CC
C
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
27.4
°C/W
θ
JC
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)
CC
C
Characteristic
Symbol
Min
18.5
—
Typ
19.5
-25
-11
25
Max
—
Unit
dB
Small-Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
G
p
IRL
ORL
P1dB
IP3
—
dB
—
—
dB
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
—
—
dBm
dBm
dB
—
40.5
5.7
135
5
—
NF
—
—
(1)
Supply Current
I
110
—
160
—
mA
V
CC
(1)
Supply Voltage
V
CC
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3014NT1
RF Device Data
Freescale Semiconductor
2
Table 5. Functional Pin Description
2
Pin
Pin Function
Number
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology
Class
Human Body Model (per JESD 22-A114)
Machine Model (per EIA/JESD 22-A115)
Charge Device Model (per JESD 22-C101)
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
MMG3014NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
25
20
S11
−5
15
10
5
S22
T
= −40°C
C
25°C
V
= 5 Vdc
= 135 mA
85°C
CC
V
CC
= 5 Vdc
I
CC
−10
0
1
2
3
4
3.5
4
0
1
2
3
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
23
21
19
17
15
13
26
25
24
V
= 5 Vdc
= 135 mA
CC
I
CC
900 MHz
1960 MHz
2140 MHz
2600 MHz
V
= 5 Vdc
= 135 mA
CC
11
9
I
CC
3500 MHz
0.5
1
1.5
2
2.5
3
6
10
14
18
22
26
P
, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
out
Figure 4. Small-Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
42
200
180
160
140
120
100
80
40
60
V
= 5 Vdc
= 135 mA
CC
40
20
0
I
CC
1 MHz Tone Spacing
38
0
1
2
3
4
5
6
0
1
2
3
V
CC
, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3014NT1
RF Device Data
Freescale Semiconductor
4
50 OHM TYPICAL CHARACTERISTICS
42
40
38
42
40
V
= 5 Vdc
f = 900 MHz
CC
f = 900 MHz
1 MHz Tone Spacing
38
1 MHz Tone Spacing
4.5
4.7
4.9
5.1
5.3
5.5
−40
−20
0
20
40
60
80
100
V
CC
, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
Figure 9. Third Order Output Intercept Point
versus Case Temperature
5
10
10
10
−30
−40
−50
4
−60
−70
−80
V
= 5 Vdc
= 135 mA
CC
I
CC
f = 900 MHz
1 MHz Tone Spacing
22 25
3
120
125
130
135
140
145
150
10
13
16
19
P , OUTPUT POWER (dBm)
out
T , JUNCTION TEMPERATURE (°C)
J
NOTE: The MTTF is calculated with V = 5 Vdc, I = 135 mA
CC CC
Figure 10. Third Order Intermodulation versus
Output Power
Figure 11. MTTF versus Junction Temperature
−20
10
V
CC
= 5 Vdc, I = 135 mA, f = 2140 MHz
CC
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
8
6
4
−30
−40
−50
−60
−70
2
0
V
= 5 Vdc
= 135 mA
CC
I
CC
0
1
2
3
4
10
13
16
19
22
25
f, FREQUENCY (GHz)
P , OUTPUT POWER (dBm)
out
Figure 12. Noise Figure versus Frequency
Figure 13. Single-Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3014NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 800-1000 MHz
V
SUPPLY
R1
C3
C4
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C2
C1
CC
C5
C6
C7
Z1, Z8
Z2, Z7
Z3
0.274″ x 0.058″ Microstrip
0.073″ x 0.058″ Microstrip
0.066″ x 0.058″ Microstrip
0.509″ x 0.058″ Microstrip
Z5
Z6
PCB
0.172″ x 0.058″ Microstrip
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Z4
Figure 14. 50 Ohm Test Circuit Schematic
30
20
S21
R1
10
C4
C3
0
C6
C1
C2
L1
S22
−10
−20
−30
C5
C7
S11
V
= 5 Vdc
= 135 mA
CC
I
CC
MMG30XX
Rev 2
−40
700
800
900
f, FREQUENCY (MHz)
1000
1100
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
220 pF Chip Capacitors
Part Number
C0805C221J5GAC
C0603C104J5RAC
C0805C225J4RAC
12065J0R2BS
Manufacturer
Kemet
C1, C2
C3
0.1 μF Chip Capacitor
2.2 μF Chip Capacitor
0.2 pF Chip Capacitor
4.7 pF Chip Capacitor
1.8 pF Chip Capacitor
10 nH Chip Inductor
0 Ω Chip Resistor
Kemet
C4
Kemet
C5
AVX
C6
C0603C479J5GAC
C0603C189J5GAC
HK160810NJ-T
Kemet
C7
Kemet
L1
Taiyo Yuden
Panasonic
R1
ERJ3GEY0R00V
MMG3014NT1
RF Device Data
Freescale Semiconductor
6
50 OHM APPLICATION CIRCUIT: 1800-2200 MHz
V
SUPPLY
R1
C3
C4
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C2
C1
CC
C5
C6
Z1, Z7
Z2
Z3
0.347″ x 0.058″ Microstrip
0.399″ x 0.058″ Microstrip
0.176″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z5
Z6
PCB
0.162″ x 0.058″ Microstrip
0.241″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Z4
Figure 17. 50 Ohm Test Circuit Schematic
20
10
S21
R1
C4
C3
C1
C5
C2
L1
0
S11
S22
−10
C6
V
= 5 Vdc
= 135 mA
CC
MMG30XX
Rev 2
I
CC
−20
1600
1800
2000
f, FREQUENCY (MHz)
2200
2400
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
22 pF Chip Capacitors
Part Number
C0805C220J5GAC
C0603C104J5RAC
C0805C225J4RAC
C0603C159J5RAC
C0603C119J5GAC
HK160815NJ-T
Manufacturer
Kemet
C1, C2
C3
0.1 μF Chip Capacitor
2.2 μF Chip Capacitor
1.5 pF Chip Capacitor
1.1 pF Chip Capacitor
15 nH Chip Inductor
0 Ω Chip Resistor
Kemet
C4
Kemet
C5
Kemet
C6
Kemet
L1
Taiyo Yuden
Panasonic
R1
ERJ3GEY0R00V
MMG3014NT1
RF Device Data
Freescale Semiconductor
7
50 OHM APPLICATION CIRCUIT: 2300-2700 MHz
V
SUPPLY
R1
C3
C4
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C2
C1
CC
C5
C6
Z1, Z7
Z2
Z3
0.347″ x 0.058″ Microstrip
0.488″ x 0.058″ Microstrip
0.087″ x 0.058″ Microstrip
0.136″ x 0.058″ Microstrip
Z5
Z6
PCB
0.036″ x 0.058″ Microstrip
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Z4
Figure 20. 50 Ohm Test Circuit Schematic
20
10
0
S21
R1
C4
C3
C1
C2
L1
S11
C5
−10
−20
−30
C6
V
= 5 Vdc
= 135 mA
CC
S22
MMG30XX
Rev 2
I
CC
2100
2300
2500
f, FREQUENCY (MHz)
2700
2900
Figure 21. S21, S11 and S22 versus Frequency
Figure 22. 50 Ohm Test Circuit Component Layout
Table 10. 50 Ohm Test Circuit Component Designations and Values
Part
Description
22 pF Chip Capacitors
Part Number
C0805C220J5GAC
C0603C104J5RAC
C0805C225J4RAC
C0603C119J5GAC
HK160815NJ-T
Manufacturer
Kemet
C1, C2
C3
0.1 μF Chip Capacitor
2.2 μF Chip Capacitor
1.1 pF Chip Capacitors
15 nH Chip Inductor
0 Ω Chip Resistor
Kemet
C4
Kemet
C5, C6
L1
Kemet
Taiyo Yuden
Panasonic
R1
ERJ3GEY0R00V
MMG3014NT1
RF Device Data
Freescale Semiconductor
8
50 OHM APPLICATION CIRCUIT: 3400-3600 MHz
V
SUPPLY
R1
C3
C4
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C2
C1
CC
C5
C6
C7
Z1, Z8
Z2
Z3
0.347″ x 0.058″ Microstrip
0.068″ x 0.058″ Microstrip
0.419″ x 0.058″ Microstrip
0.088″ x 0.058″ Microstrip
Z6
Z7
PCB
0.084″ x 0.058″ Microstrip
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Z4, Z5
Figure 23. 50 Ohm Test Circuit Schematic
20
10
S21
R1
C4
C3
0
C5
C1
C2
L1
S11
S22
C6
−10
−20
−30
C7
V
= 5 Vdc
= 135 mA
CC
MMG30XX
Rev 2
I
CC
3400
3450
3500
f, FREQUENCY (MHz)
3550
3600
Figure 24. S21, S11 and S22 versus Frequency
Figure 25. 50 Ohm Test Circuit Component Layout
Table 11. 50 Ohm Test Circuit Component Designations and Values
Part
Description
3.3 pF Chip Capacitor
Part Number
C0805C339J5GAC
C0805C209J5GAC
C0603C104J5RAC
C0805C225J4RAC
06035J0R6BS
Manufacturer
Kemet
C1
C2
C3
C4
C5
C6
C7
L1
2.0 pF Chip Capacitor
0.1 μF Chip Capacitor
2.2 μF Chip Capacitor
0.6 pF Chip Capacitor
0.9 pF Chip Capacitor
0.8 pF Chip Capacitor
56 nH Chip Inductor
0 Ω Chip Resistor
Kemet
Kemet
Kemet
AVX
06035J0R9BS
AVX
06035J0R8BS
AVX
HK160856NJ-T
ERJ3GEY0R00V
Taiyo Yuden
Panasonic
R1
MMG3014NT1
RF Device Data
Freescale Semiconductor
9
50 OHM TYPICAL CHARACTERISTICS
Table 12. Common Emitter S-Parameters (V = 5 Vdc, I = 135 mA, T = 25°C, 50 Ohm System)
CC
CC
C
S
11
S
21
S
12
S
22
f
MHz
|S
|
∠ φ
|S
|
∠ φ
|S
|
∠ φ
0.6
|S |
22
∠ φ
11
21
12
250
300
0.622
0.618
0.616
0.613
0.611
0.611
0.610
0.610
0.610
0.611
0.615
0.618
0.621
0.625
0.624
0.624
0.624
0.625
0.626
0.628
0.629
0.632
0.634
0.636
0.640
0.643
0.646
0.649
0.653
0.657
0.661
0.665
0.669
0.673
0.677
0.681
0.685
0.689
0.693
0.697
0.701
0.705
0.709
174.6
174.0
173.4
173.0
172.5
172.0
171.4
170.9
170.4
169.9
169.5
171.8
171.4
170.9
170.2
169.6
168.9
168.3
167.6
166.9
166.1
165.4
164.6
163.8
163.0
162.2
161.3
160.5
159.7
158.9
158.0
157.2
156.4
155.5
154.7
153.8
153.0
152.2
151.3
150.5
149.6
148.7
147.8
10.280
10.107
9.933
9.760
9.586
9.300
9.009
8.716
8.363
8.064
7.734
7.403
7.073
6.838
6.629
6.422
6.227
6.044
5.866
5.700
5.545
5.393
5.257
5.117
4.988
4.864
4.742
4.630
4.517
4.414
4.312
4.215
4.123
4.033
3.947
3.864
3.783
3.707
3.633
3.562
3.494
3.426
3.363
153.8
148.3
143.1
138.3
133.8
129.8
126.0
122.4
119.2
116.2
113.3
110.9
108.4
106.0
103.7
101.5
99.4
0.0336
0.0336
0.0337
0.0337
0.0338
0.0338
0.0339
0.0339
0.0340
0.0340
0.0341
0.0342
0.0342
0.0343
0.0343
0.0344
0.0344
0.0346
0.0347
0.0349
0.0351
0.0352
0.0354
0.0355
0.0356
0.0357
0.0359
0.0360
0.0361
0.0362
0.0363
0.0364
0.0364
0.0365
0.0366
0.0367
0.0367
0.0368
0.0369
0.0369
0.0370
0.0371
0.0371
0.448
0.457
0.465
0.475
0.483
0.490
0.497
0.503
0.508
0.512
0.517
0.526
0.533
0.536
0.536
0.537
0.537
0.538
0.538
0.539
0.540
0.540
0.541
0.543
0.544
0.545
0.547
0.549
0.550
0.552
0.554
0.556
0.557
0.559
0.560
0.562
0.563
0.564
0.564
0.565
0.565
0.565
0.564
-171.6
-171.9
-172.5
-173.3
-174.0
-174.9
-175.8
-176.8
-177.9
-178.9
176.5
175.5
174.5
173.5
172.6
171.8
170.9
169.9
169.1
168.2
167.3
166.5
165.6
164.9
164.1
163.3
162.6
161.8
161.1
160.3
159.6
158.9
158.2
157.4
156.7
156.0
155.2
154.4
153.6
152.8
152.0
151.2
150.3
0.3
350
-0.1
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.7
-1.8
-1.9
-2.0
-2.2
-2.3
-2.5
-2.7
-2.8
-3.0
-3.2
-3.4
-3.6
-3.8
-4.0
-4.2
-4.4
-4.5
-4.8
-5.0
-5.2
-5.5
-5.7
-6.0
-6.3
-6.6
-6.9
-7.2
-7.6
-7.9
-8.3
-8.7
-9.1
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
97.3
95.4
93.5
91.7
89.9
88.2
86.5
84.8
83.2
81.7
80.1
78.6
77.1
75.6
74.2
72.7
71.3
69.8
68.4
67.0
65.5
64.1
62.7
61.3
59.8
58.4
(continued)
MMG3014NT1
RF Device Data
Freescale Semiconductor
10
50 OHM TYPICAL CHARACTERISTICS
Table 12. Common Emitter S-Parameters (V = 5 Vdc, I = 135 mA, T = 25°C, 50 Ohm System) (continued)
CC
CC
C
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
2400
2450
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
3250
3300
3350
3400
3450
3500
3550
3600
3650
3700
3750
3800
3850
3900
3950
4000
0.712
0.715
0.719
0.722
0.724
0.728
0.730
0.733
0.736
0.738
0.740
0.742
0.745
0.747
0.749
0.751
0.753
0.756
0.758
0.760
0.762
0.764
0.766
0.768
0.770
0.772
0.774
0.775
0.777
0.778
0.780
0.781
0.783
146.9
146.0
145.0
144.1
143.1
142.2
141.2
140.2
139.2
138.2
137.2
136.2
135.2
134.2
133.1
132.1
131.1
130.1
129.1
128.1
127.1
126.1
125.1
124.2
123.2
122.3
121.3
120.4
119.5
118.6
117.6
116.7
115.8
3.299
3.240
3.181
3.124
3.071
3.017
2.968
2.920
2.872
2.828
2.784
2.743
2.703
2.664
2.627
2.590
2.555
2.521
2.487
2.455
2.422
2.392
2.361
2.331
2.302
2.273
2.246
2.218
2.192
2.167
2.142
2.118
2.091
57.0
55.6
54.1
52.7
51.3
49.9
48.5
47.1
45.8
44.4
43.0
41.7
40.3
39.0
37.6
36.3
35.0
33.7
32.4
31.1
29.8
28.6
27.3
26.1
24.9
23.7
22.6
21.5
20.4
19.2
18.1
17.1
16.0
0.0372
0.0373
0.0373
0.0374
0.0374
0.0375
0.0376
0.0377
0.0378
0.0380
0.0381
0.0382
0.0384
0.0385
0.0386
0.0388
0.0389
0.0390
0.0391
0.0393
0.0394
0.0395
0.0396
0.0397
0.0398
0.0399
0.0400
0.0401
0.0403
0.0404
0.0405
0.0406
0.0407
-9.5
0.564
0.563
0.562
0.562
0.561
0.560
0.559
0.559
0.558
0.557
0.557
0.557
0.557
0.557
0.557
0.557
0.558
0.558
0.559
0.560
0.560
0.561
0.562
0.563
0.564
0.565
0.566
0.567
0.568
0.569
0.570
0.571
0.572
149.5
148.6
147.7
146.8
145.9
145.0
144.0
143.1
142.1
141.1
140.1
139.1
138.1
137.1
136.1
135.1
134.1
133.2
132.2
131.3
130.5
129.6
128.9
128.1
127.4
126.7
126.1
125.6
125.1
124.6
124.2
123.7
123.5
-9.9
-10.3
-10.8
-11.2
-11.6
-12.0
-12.4
-12.9
-13.4
-13.8
-14.4
-14.9
-15.4
-15.9
-16.4
-17.0
-17.5
-18.0
-18.5
-19.0
-19.5
-20.0
-20.5
-21.0
-21.4
-21.8
-22.2
-22.6
-23.0
-23.4
-23.9
-24.2
MMG3014NT1
RF Device Data
Freescale Semiconductor
11
1.7
7.62
0.305 diameter
2.49
3.48
0.58
5.33
2.54
1.27
1.27
0.86
0.64
3.86
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
Recommended Solder Stencil
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 26. Recommended Mounting Configuration
MMG3014NT1
RF Device Data
Freescale Semiconductor
12
PACKAGE DIMENSIONS
MMG3014NT1
RF Device Data
Freescale Semiconductor
13
MMG3014NT1
RF Device Data
Freescale Semiconductor
14
MMG3014NT1
RF Device Data
Freescale Semiconductor
15
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Apr. 2008
Sept. 2008
•
•
Initial Release of Data Sheet
Updated Fig. 15, “S21, S11 and S22 versus Frequency”, to correct S11 and S22 curve label transposition
error, p. 6
•
Updated data in Table 12, “Common Emitter S-Parameters”, for better simulation response, p. 10 and 11
MMG3014NT1
RF Device Data
Freescale Semiconductor
16
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Document Number: MMG3014NT1
Rev. 1,9/2008
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