MRF5015 [FREESCALE]
N-CHANNEL BROADBAND RF POWER FET; N沟道宽带射频功率场效应管
| 型号： | MRF5015 |
| 厂家： | 
Freescale |
| 描述： | N-CHANNEL BROADBAND RF POWER FET |
| 文件： | 总8页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF5015/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
•
Guaranteed Performance at 512 MHz, 12.5 Volts
Output Power — 15 Watts
15 W, 512 MHz, 12.5 VOLTS
N–CHANNEL BROADBAND
RF POWER FET
Power Gain — 10 dB Min
Efficiency — 50% Min
•
•
•
•
•
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
All Gold Metal for Ultra Reliability
Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 319–07, STYLE 3
MAXIMUM RATINGS
Rating
Symbol
Value
36
Unit
Drain–Source Voltage
V
DSS
Vdc
Vdc
Vdc
Adc
Drain–Gate Voltage (RGS = 1 MΩ)
Gate–Source Voltage
V
DGR
36
V
GS
± 20
6
Drain Current — Continuous
I
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
50
0.29
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
T
– 65 to +150
200
°C
°C
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
Symbol
Max
Unit
R
3.5
°C/W
θJC
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V
= 0, I = 5 mAdc)
V
(BR)DSS
36
—
—
—
—
—
—
5
Vdc
mAdc
GS
D
Zero Gate Voltage Drain Current (V
= 15 Vdc, V
= 0)
I
DS
= 20 Vdc, V
GS
= 0)
DS
DSS
GSS
Gate–Source Leakage Current (V
I
2
µAdc
GS
(continued)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(V = 10 Vdc, I = 10 mAdc)
V
1.25
—
2.3
—
3.5
0.375
—
Vdc
Vdc
S
GS(th)
DS
Drain–Source On–Voltage
(V = 10 Vdc, I = 1 Adc)
D
V
DS(on)
GS
Forward Transconductance
(V = 10 Vdc, I = 1 Adc )
D
g
fs
1.2
—
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
7
33
74
—
—
pF
pF
pF
iss
(V
DS
= 12.5 Vdc, V
= 0, f = 1 MHz)
GS
GS
Output Capacitance
(V = 12.5 Vdc, V
C
oss
= 0, f = 1 MHz)
DS
Reverse Transfer Capacitance
(V = 12.5 Vdc, V = 0, f = 1 MHz)
C
8.8
10.8
rss
DS
GS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
G
dB
%
ps
(V
DD
= 12.5 Vdc, P
= 100 mA)
= 15 W,
f = 512 MHz
f = 175 MHz
10
—
11.5
15
—
—
out
I
DQ
Drain Efficiency
(V = 12.5 Vdc, P
η
= 15 W,
f = 512 MHz
f = 175 MHz
50
—
55
55
—
—
DD
= 100 mA)
out
I
DQ
Load Mismatch
(V = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
ψ
No Degradation in Output Power
DD
Load VSWR = 20:1, All Phase Angles at Frequency of Test)
R1
B1
V
V
DD
GG
+
+
C1
C12
C13
C2
R3
R2
B1
C3
Socket
C11
L1
Z4
Z5
L2
DUT
C4
N2
N1
Z1
Z2
C5
Z6
Z7
Z8
Z9
Z10 C10
Z11
Z3
RF
RF
Input
Output
C8
C7
C9
C6
B1, B2
C1, C13
C2, C12
Ferrite Bead, Fair Rite Products
10 µF, 50 V, Electrolytic
0.1 µF, Chip Capacitor
R3
Z1, Z11
Z2
Z3
Z4
Z5
Z6
Z7, Z8
Z9
Z10
Board
160 Ω, 0.1 W Chip
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line+
Transmission Line*
Transmission Line*
Glass Teflon 0.060″
C3, C4, C10, C11 120 pF, Chip Capacitor
C5, C9
C6
C7
C8
L1, L2
N1, N2
R1
0 to 20 pF, Trimmer Capacitor
36 pF, Chip Capacitor
43 pF, Chip Capacitor
30 pF, Chip Capacitor
7 Turns, 24 AWG 0.116″ ID
Type N Flange Mount
1 kΩ, 1/4 W, Carbon
R2
470 kΩ, 1/4 W, Carbon
+ Part of Capacitor Mount Socket
*See Photomaster
Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic
MRF5015
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
25
20
15
10
5
25
P = 1.5 W
in
I
= 100 mA
DQ
f = 520 MHz
f = 400 MHz
470 MHz
520 MHz
20
15
10
1 W
0.5 W
V
I
= 12.5 V
= 100 mA
DD
DQ
5
0
0
0
0.5
1
1.5
2
2.5
6
8
10
12
14
16
P
, INPUT POWER (WATTS)
V , SUPPLY VOLTAGE (VOLTS)
DD
in
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
25
2
V
P
= 12.5 V
1.8
1.6
DD
= 1.5 W
V
= 10 V
DS
in
f = 520 MHz
20
1.4
1.2
1
Typical Device Shown
15
10
5
0.8
0.6
0.4
0.2
Typical Device Shown
0
0
1
2
3
4
5
6
0
1
2
3
4
V
, GATE–SOURCE VOLTAGE (VOLTS)
V , GATE–SOURCE VOLTAGE (VOLTS)
GS
GS
Figure 4. Output Power versus Gate Voltage
Figure 5. Drain Current versus Gate Voltage
200
150
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.94
V
= 0
I
= 1.5 A
V
= 12.5 V
GS
f = 1 MHz
D
DD
I
= 1 A
D
C
oss
100
50
0
C
I
= 0.5 A
iss
D
I
= 0.05 A
D
C
I
= 0.25 A
rss
D
0
5
10
15
20
25
30
– 25
0
25
50
, CASE TEMPERATURE (
C
75
100
125
150
175
V
, DRAIN–SOURCE VOLTAGE (VOLTS)
T
°C)
DS
Figure 6. Capacitance versus Voltage
Figure 7. Gate–Source Voltage
versus Case Temperature
MOTOROLA RF DEVICE DATA
MRF5015
3
TYPICAL CHARACTERISTICS
10
T
= 25
°C
C
1
0.1
1
10
100
V
, DRAIN–SOURCE VOLTAGE (VOLTS)
DS
Figure 8. DC Safe Operating Area
V
= 12.5 V, I
= 100 mA, P
= 15 W
out
DD
DQ
f
Z
(Ω)
Z
OL
(Ω)
*
in
(MHz)
400
420
440
460
480
500
520
2.0 – j6.1
1.8 – j5.3
1.6 – j4.7
1.5 – j4.2
1.4 – j3.8
1.3 – j3.6
1.2 – j3.5
1.3 – j0.4
1.4 – j0.4
1.5 – j0.4
1.5 – j0.3
1.5 – j0.2
1.4 – j0.1
1.3 + j0.1
520
Z
*
OL
460
f = 400 MHz
Z
= 10
Ω
o
Z
Z
= Conjugate of source impedance with
parallel 160 Ω resistor and 36 pF capacitor
in series with gate.
in
520
460
= Conjugate of the load impedance at given
output power, voltage and frequency that
produces maximum gain.
OL*
Z
in
f = 400 MHz
Figure 9. Series Equivalent Input and Output Impedance
MRF5015
4
MOTOROLA RF DEVICE DATA
Table 1. Common Source Scattering Parameters (V
= 12.5 V)
DS
I
D
= 50 mA
f
S
11
S
11
S
11
S
11
S
S
S
S
S
S
S
S
S
22
S
22
S
22
S
22
21
12
MHz
|S
|
φ
|S
|
φ
|S
|
φ
|S
|
φ
11
21
12
22
50
100
200
300
400
500
700
850
1000
0.63
0.62
0.70
0.78
0.84
0.88
0.93
0.95
0.96
–123
–142
–152
–157
–162
–165
–171
–175
–178
8
4
1.8
1.1
0.70
0.49
0.28
0.20
0.15
100
82
61
47
36
28
17
13
10
0.063
0.063
0.056
0.046
0.037
0.029
0.016
0.010
0.007
11
– 6
0.79
0.82
0.86
0.90
0.93
0.94
0.97
0.97
0.98
–149
–162
–169
–171
–174
–175
–179
179
– 23
– 35
– 42
– 46
– 45
– 31
11
178
I
D
= 100 mA
f
21
12
12
12
MHz
|S
11
|
φ
|S
21
|
φ
|S
12
|
φ
|S
22
|
φ
50
100
200
300
400
500
700
850
1000
0.67
0.66
0.71
0.77
0.82
0.86
0.91
0.93
0.95
–136
–153
–160
–163
–165
–168
–173
–176
–179
9.1
4.6
2.2
1.3
0.89
0.64
0.37
0.27
0.20
99
84
66
54
44
36
25
20
16
0.047
0.048
0.043
0.037
0.031
0.025
0.015
0.010
0.009
10
–3
0.82
0.85
0.87
0.90
0.92
0.94
0.96
0.97
0.98
–158
–168
–172
–174
–175
–177
–179
179
–17
– 26
– 32
– 35
– 30
–11
25
177
I
D
= 500 mA
f
21
MHz
|S
11
|
φ
|S
21
|
φ
|S
12
|
φ
|S
22
|
φ
50
100
200
300
400
500
700
850
1000
0.81
0.81
0.82
0.84
0.86
0.88
0.91
0.93
0.94
–150
–164
–170
–173
–174
–175
–178
180
11.1
5.6
2.7
1.7
1.2
0.92
0.57
0.43
0.33
98
86
73
63
55
47
35
29
23
0.027
0.027
0.025
0.023
0.020
0.018
0.013
0.013
0.014
11
2
0.85
0.87
0.88
0.89
0.91
0.92
0.94
0.95
0.96
–168
–174
–176
–177
–178
–179
180
– 5
– 9
– 9
– 7
7
26
44
178
177
178
I
D
= 2.5 A
f
21
MHz
|S
11
|
φ
|S
21
|
φ
|S
12
|
φ
|S
22
|
φ
50
100
200
300
400
500
700
850
1000
0.86
0.85
0.86
0.87
0.89
0.91
0.93
0.94
0.95
–144
–161
–170
–173
–175
–176
–179
179
10.1
5.2
2.5
1.6
1.1
0.84
0.52
0.39
0.30
101
88
74
64
55
48
37
30
26
0.022
0.022
0.021
0.019
0.017
0.015
0.013
0.014
0.016
15
5
–1
– 4
– 2
2
22
39
52
0.85
0.87
0.89
0.90
0.91
0.93
0.95
0.96
0.96
–171
–175
–177
–178
–178
–179
179
178
176
177
MOTOROLA RF DEVICE DATA
MRF5015
5
DESIGN CONSIDERATIONS
GATE CHARACTERISTICS
The MRF5015 is a common–source, RF power, N–Chan-
nel enhancement mode, Metal–Oxide Semiconductor Field–
Effect Transistor (MOSFET). Motorola RF MOSFETs feature
a vertical structure with a planar design. Motorola Application
Note AN211A, “FETs in Theory and Practice,” is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The input resistance is very high, on the order of 10 Ω, re-
sulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
9
This device was designed primarily for 12.5 volt VHF and
UHF power amplifier applications. The major advantages of
RF power MOSFETs include high gain, simple bias systems,
relative immunity from thermal runaway, and the ability to
withstand severely mismatched loads without suffering dam-
age.
V
.
GS(th)
Gate Voltage Rating – Never exceed the gate voltage rat-
ing. Exceeding the rated V can result in permanent dam-
GS
age to the oxide layer in the gate region.
Gate Termination – The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open–cir-
cuited or floating must be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
Gate Protection – These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protec-
tion is required, an external zener diode is recommended
with appropriate RF decoupling networks.
Using a resistor to keep the gate–to–source impedance
low also helps dampen transients and serves another impor-
tant function. Voltage transients on the drain can be coupled
to the gate through the parasitic gate–drain capacitance. If
the gate–to–source impedance and the rate of voltage
change on the drain are both high, then the signal coupled to
the gate may be large enough to exceed the gate–threshold
voltage and turn the device on.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (C ), and
gd
gate–to–source (C ). The PN junction formed during fab-
gs
rication of the RF MOSFET results in a junction capacitance
from drain–to–source (C ). These capacitances are charac-
ds
terized as input (C ), output (C
iss
) and reverse transfer
oss
(C ) capacitances on data sheets. The relationships be-
rss
tween the inter–terminal capacitances and those given on
data sheets are shown below. The C
two ways:
can be specified in
iss
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and
2. zero volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
DC BIAS
Since the MRF5015 is an enhancement mode FET, drain
current flows only when the gate is at a higher potential than
the source. See Figure 5 for a typical plot of drain current
versus gate voltage. RF power FETs operate optimally with a
Drain
quiescent drain current (I
), whose value is application de-
C
DQ
pendent. The MRF5015 was characterized at I
gd
= 100 mA,
DQ
C
C
C
= C + C
gd
which is the suggested value of bias current for typical ap-
plications. For special applications such as linear amplifica-
Gate
iss
gs
ds
= C + C
C
oss
rss
gd
gd
ds
= C
tion, I
parameters.
may have to be selected to optimize the critical
DQ
C
gs
The gate is a dc open circuit and draws essentially no cur-
rent. Therefore, the gate bias circuit may generally be just a
simple resistive divider network. Some special applications
may require a more elaborate bias system.
Source
DRAIN CHARACTERISTICS
GAIN CONTROL
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, R , occurs
in the linear region of the output characteristic and is speci-
fied at a specific gate–source voltage and drain current. The
drain–source voltage under these conditions is termed
Power output of the MRF5015 may be controlled to some
degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. Figure 4 is an example
of output power variation with gate–source bias voltage with
ds(on)
V
. For MOSFETs, V
ds(on)
has a positive temperature
ds(on)
P
held constant. This characteristic is very dependent on
coefficient at high temperatures because it contributes to the
power dissipation within the device.
in
frequency and load line.
MRF5015
6
MOTOROLA RF DEVICE DATA
yield a device quite capable of self oscillation. Stability may
be achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. Different
stabilizing techniques may be required depending on the
desired gain and bandwidth of the application. The RF test
fixture implements a parallel resistor and capacitor in series
with the gate to improve stability and input impedance Q.
Two port stability analysis with the MRF5015 S–parame-
ters provides a useful tool for selection of loading or feed-
back circuitry to assure stable operation. See Motorola
Application Note AN215A, “RF Small–Signal Design Using
Two–Port Parameters,” for a discussion of two port network
theory and stability.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF5015. For exam-
ples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.” Both
small–signal S–parameters and large–signal impedances
are provided. While the S–parameters will not produce an
exact design solution for high power operation, they do yield
a good first approximation. This is an additional advantage of
RF power MOSFETs.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of MRF5015
MOTOROLA RF DEVICE DATA
MRF5015
7
PACKAGE DIMENSIONS
Q 2 PL
-A-
L
M
M
M
0.15 (0.006)
T
A
N
IDENTIFICATION
NOTCH
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
6
1
5
4
3
-N-
INCHES
MIN
MILLIMETER
DIM
A
B
C
D
E
F
H
J
MAX
0.985
0.375
0.260
0.125
0.114
0.085
0.170
0.006
0.110
MIN
24.52
9.02
5.85
2.93
2.59
1.91
4.07
0.11
2.29
MAX
25.01
9.52
6.60
3.17
2.90
2.15
4.31
0.15
2.79
0.965
0.355
0.230
0.115
0.102
0.075
0.160
0.004
0.090
2
K
F
D 2 PL
0.38 (0.015)
M
M
M
T
A
N
K
L
0.725 BSC
18.42 BSC
M
M
M
B
0.38 (0.015)
T
A
N
N
Q
0.225
0.125
0.241
0.135
5.72
3.18
6.12
3.42
J
STYLE 3:
PIN 1. SOURCE (COMMON)
2. GATE (INPUT)
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. DRAIN (OUTPUT)
C
H
E
SEATING
PLANE
-T-
6. SOURCE (COMMON)
CASE 319–07
ISSUE M
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MRF5015/D
◊
相关型号：
MRF5160HXV
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-39
MOTOROLA
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