MRF6S20010GNR1 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF6S20010GNR1 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总24页 (文件大小：582K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S20010N
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF6S20010NR1
MRF6S20010GNR1
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
• Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ
130 mA, Pout = 10 Watts PEP
Power Gain — 15.5 dB
=
1600-2200 MHz, 10 W, 28 V
GSM/GSM EDGE
SINGLE N-CDMA
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
Drain Efficiency — 36%
IMD — -34 dBc
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 130 mA,
P
out = 1 Watt Avg., Full Frequency Band (2130-2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain — 15.5 dB
Drain Efficiency — 15%
IM3 @ 10 MHz Offset — -47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -49 dBc in 3.84 MHz Channel Bandwidth
• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ
=
CASE 1265-08, STYLE 1
TO-270-2
130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930-1990 MHz),
IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Band-
width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
PLASTIC
MRF6S20010NR1
Drain Efficiency— 16%
ACPR @ 885 kHz Offset = -60 dBc in 30 kHz Bandwidth
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout
4 Watts Avg., Full Frequency Band (1805-1880 MHz)
Power Gain — 16 dB
=
CASE 1265A-02, STYLE 1
TO-270-2 GULL
PLASTIC
Drain Efficiency — 33%
EVM — 1.3% rms
MRF6S20010GNR1
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +12
-65 to +175
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Storage Temperature Range
Operating Junction Temperature
T
stg
T
°C
J
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 78°C, 1 W CW
Case Temperature 79°C, 10 W PEP, Two-Tone Test
R
θ
JC
°C/W
2.5
5.9
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
500
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 40 μAdc)
V
V
1.5
2
2.2
2.8
3.5
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 130 mAdc, Measured in Functional Test)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 0.4 Adc)
V
—
0.33
0.4
GS
D
(3)
Dynamic Characteristics
Input Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.12
0.02
11.6
—
—
—
pF
pF
pF
iss
GS
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Reverse Transfer Capacitance
C
rss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 130 mA, P = 10 W PEP, f1 = 2170 MHz,
DD
DQ
out
f2 = 2170.1 MHz, Two-Tone Test
Power Gain
G
14
33
—
—
15.5
36
17
—
dB
%
ps
Drain Efficiency
η
D
Intermodulation Distortion
Input Return Loss
IMD
IRL
-34
-15
-28
-9
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part internally matched on input.
(continued)
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Typical 2-Carrier W-CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) V = 28 Vdc, I = 130 mA, P =
out
Symbol
Min
Typ
Max
Unit
DD
DQ
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
—
—
—
—
—
15.5
—
—
—
—
—
dB
ps
Drain Efficiency
η
D
15
%
Gain Flatness in 30 MHz Bandwidth @ P = 1 W CW
G
0.3
-47
-49
dB
out
F
Intermodulation Distortion
IM3
dBc
dBc
Adjacent Channel Power Ratio
ACPR
Typical N-CDMA Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 130 mA, P = 1 W Avg.,
DD
DQ
out
1930 MHz<Frequency<1990 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
—
—
—
—
15.5
16
—
—
—
—
dB
%
ps
Drain Efficiency
η
D
Gain Flatness in 30 MHz Bandwidth @ P = 1 W CW
G
0.3
-60
dB
dBc
out
F
Adjacent Channel Power Ratio
ACPR
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V = 28 Vdc, I = 130 mA, P = 4 W Avg.,
DD
DQ
out
1805-1880 MHz, EDGE Modulation
Power Gain
G
—
—
—
—
—
—
16
—
—
—
—
—
—
dB
%
ps
Drain Efficiency
η
33
D
Gain Flatness in 30 MHz Bandwidth @ P = 4 W CW
G
0.3
1.3
-60
-70
dB
out
F
Error Vector Magnitude
EVM
SR1
SR2
% rms
dBc
dBc
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
3
R1
V
SUPPLY
V
BIAS
+
R2
Z9
C11
C1
C7
C3
C4
C5
Z16
R3
Z8
Z10
RF
OUTPUT
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z11
Z12
Z13
Z14
Z15
C2
C6
DUT
Z17
C8
C9
C10
Z1, Z15
Z2
Z3, Z5
Z4
Z6
Z7
0.066″ x 0.480″ Microstrip
0.066″ x 0.765″ Microstrip
0.066″ x 0.340″ x 0.050″ Taper
0.340″ x 0.295″ Microstrip
0.020″ x 0.060″ Microstrip
0.0905″ x 0.280″ Microstrip
0.0905″ x 0.330″ Microstrip
0.050″ x 0.980″ Microstrip
Z10
Z11
Z12
Z13
Z14
0.930″ x 0.350″ Microstrip
0.930″ x 0.400″ Microstrip
0.050″ x 0.105″ Microstrip
0.405″ x 0.242″ Microstrip
0.066″ x 0.740″ Microstrip
0.050″ x 1.250″ Microstrip
Z16, Z17
PCB
Z8
Z9
Taconic RF-35, 0.030″, ε = 3.5
r
Figure 1. MRF6S20010NR1(GNR1) Test Circuit Schematic — 2110-2170 MHz
Table 6. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values — 2110-2170 MHz
Part
Description
100 nF Chip Capacitor (1206)
4.7 pF 600B Chip Capacitors
9.1 pF 600B Chip Capacitors
10 μF, 50 V Chip Capacitors
10 μF, 35 V Tantalum Chip Capacitor
1 kΩ Chip Resistor (1206)
Part Number
CDR33BX104AKWS
600B4R7CW
Manufacturer
Kemet
C1
C2, C6
C3, C7, C8
ATC
600B9R1CW
ATC
C4, C5, C9, C10
GRM55DR61H106KA88B
T490D106K035AS
Murata
Kemet
C11
R1
R2
R3
10 kΩ Chip Resistor (1206)
10 Ω Chip Resistor (1206)
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
4
C1
R2
C3
C11
C4 C5
C7
R1
R3
C2
C6
C9 C10
C8
MRF6S20010N, Rev. 2
Figure 2. MRF6S20010NR1(GNR1) Test Circuit Component Layout — 2110-2170 MHz
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — 2110-2170 MHz
−5
40
η
D
−10
−15
−20
36
32
28
24
20
16
IRL
V
= 28 Vdc, P = 10 W (PEP)
out
= 130 mA, 100 kHz Tone Spacing
DD
I
DQ
−25
−30
−35
−40
IMD
G
ps
2050
2090
2130
2170
2210
f, FREQUENCY (MHz)
Figure 3. Two-Tone Wideband Performance
@ Pout = 10 Watts (PEP)
18
17
16
15
14
−10
V
= 28 Vdc, f = 2170 MHz
DD
I
= 195 mA
DQ
Two−Tone Measurements
100 kHz Tone Spacing
−20
−30
162.5 mA
130 mA
I
= 65 mA
DQ
195 mA
97.5 mA
65 mA
−40
13
12
11
162.5 mA
V
= 28 Vdc, f = 2170 MHz
DD
−50
−60
97.5 mA
130 mA
Two−Tone Measurements
100 kHz Tone Spacing
0.1
1
10
30
0.1
1
10
30
P
, OUTPUT POWER (WATTS) PEP
out
P
, OUTPUT POWER (WATTS) PEP
out
Figure 4. Two-Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation
Distortion versus Output Power
−10
−20
−30
−40
−50
−60
−70
−30
V
= 28 Vdc, I = 130 mA
DQ
DD
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurements
3rd Order
−35
−40
−45
−50
3rd Order
V
= 28 Vdc, P = 10 W (PEP)
out
= 130 mA, Two−Tone Measurements
DD
I
DQ
(f1 + f2)/2 = Center Frequency of 2170 MHz
7th Order
5th Order
7th Order
5th Order
−55
0.1
1
, OUTPUT POWER (WATTS) PEP
10
30
0.1
1
10
100
P
TWO−TONE SPACING (MHz)
out
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS — 2110-2170 MHz
18
70
60
50
40
30
20
47
45
43
41
39
T = −30_C
C
G
17
ps
P3dB = 41.5 dBm (14.2 W)
Ideal
−30_C
25_C
85_C
16
15
14
13
25_C
P1dB = 40.9 dBm (12.26 W)
85_C
Actual
η
V
I
= 28 Vdc
= 130 mA
D
DD
DQ
f = 2170 MHz
V
= 28 Vdc, I = 130 mA
DQ
DD
37
35
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2170 MHz
12
11
10
0
20
22
24
26
28
30
0.1
1
10
30
P
, OUTPUT POWER (WATTS) CW
out
P , INPUT POWER (dBm)
in
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
27
6
16
15
V
P
= 28 Vdc
= 10 W (PEP)
= 130 mA
DD
out
S21
18
9
3
0
I
DQ
14
13
12
−3
0
32 V
−6
−9
−9
−18
28 V
24 V
20 V
16 V
= 12 V
11
10
S11
−12
−15
−27
−36
I
= 130 mA
f = 2170 MHz
DQ
V
DD
0
3
6
9
12
15
18 21
400
800
1200
1600
2000
2400
2800
3200
f, FREQUENCY (MHz)
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain versus Output Power
Figure 11. Broadband Frequency Response
8
10
7
10
6
10
5
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 12. MTTF Factor versus Junction Temperature
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
7
W-CDMA TYPICAL CHARACTERISTICS — 2110-2170 MHz
16
18
15.8
15.6
15.4
15.2
15
17
16
G
ps
15
V
= 28 Vdc, P = 1 W (Avg.), I = 130 mA
out DQ
DD
η
D
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
14
−45
−47
−49
−51
−10
−12
−14
−16
−18
14.8
IM3
14.6
14.4
ACPR
−53
−55
14.2
14
IRL
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 13. 2-Carrier W-CDMA Broadband Performance @ Pout = 1 Watt Avg.
49
−20
V
= 28 Vdc, I = 130 mA
DQ
DD
f1 = 2165 MHz, f2 = 2175 MHz
2−Carrier W−CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB
42
35
28
21
14
−25
−30
−35
−40
@ 0.01% Probability (CCDF)
η
D
G
T = 25_C
ps
C
−45
−50
−55
IM3
ACPR
7
0
0.1
1
10
20
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 14. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
8
W-CDMA TEST SIGNAL
100
10
+20
+30
0
3.84 MHz
Channel BW
−10
1
−20
−30
0.1
0.01
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
−40
−50
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−60
−70
−80
−IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
0.001
0.0001
−25 −20 −15 −10
−5
0
5
10
15
20
25
0
2
4
6
8
10
f, FREQUENCY (MHz)
PEAK−TO−AVERAGE (dB)
Figure 16. 2-Carrier W-CDMA Spectrum
Figure 15. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
9
N-CDMA TYPICAL CHARACTERISTICS — 1930-1990 MHz
R1
V
SUPPLY
V
BIAS
+
R2
Z7
C11
C1
C7
C3
C4
C5
Z17
R3
Z8
RF
OUTPUT
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z9
Z10 Z11 Z12 Z13 Z14 Z15
Z16
C2
C6
DUT
Z18
C8
C9
C10
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
0.066″ x 0.480″ Microstrip
0.066″ x 0.728″ Microstrip
0.354″ x 0.512″ Microstrip
0.066″ x 0.079″ Microstrip
0.591″ x 0.335″ Microstrip
0.050″ x 0.980″ Microstrip
1.142″ x 0.350″ Microstrip
1.142″ x 0.516″ Microstrip
0.433″ x 0.276″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17, Z18
PCB
0.244″ x 0.423″ Microstrip
0.244″ x 0.066″ x 0.089″ Taper
0.066″ x 0.182″ Microstrip
0.066″ x 0.263″ Microstrip
0.236″ x 0.118″ Microstrip
0.066″ x 0.099″ Microstrip
0.050″ x 1.250″ Microstrip
Taconic RF-35, 0.030″, ε = 3.5
r
Figure 17. MRF6S20010NR1(GNR1) Test Circuit Schematic — 1930-1990 MHz
Table 7. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values — 1930-1990 MHz
Part
Description
100 nF Chip Capacitor (1206)
4.7 pF 600B Chip Capacitors
9.1 pF 600B Chip Capacitors
10 μF Chip Capacitors (2220)
10 μF, 35 V Tantalum Chip Capacitor
10 kΩ Chip Resistors (1206)
10 Ω Chip Resistor (1206)
Part Number
1206C104KAT
Manufacturer
AVX
C1
C2, C6
C3, C7, C8
600B4R7BW
ATC
ATC
TDK
AVX
600B9R1BW
C4, C5, C9, C10
C5750X5R1H106MT
TAJD106K035
C11
R1, R2
R3
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
10
N-CDMA TYPICAL CHARACTERISTICS — 1930-1990 MHz
V
DD
V
GS
R2 C1
C11
C4
C5
C3
C7
R1
R3
C6
C2
C8
C9 C10
MRF6S20010N
Rev 0
Figure 18. MRF6S20010NR1(GNR1) Test Circuit Component Layout — 1930-1990 MHz
MRF6S20010NR1 MRF6S20010GNR1
11
RF Device Data
Freescale Semiconductor
N-CDMA TYPICAL CHARACTERISTICS — 1930-1990 MHz
15.9
19
V
= 28 Vdc, P = 1 W (Avg.), I = 500 mA
out DQ
DD
15.8
15.7
15.6
15.5
18
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13)
17
η
D
16
15
G
−59
−59.4
ps
15.4
15.3
15.2
−8
−59.8
−60.2
−11
−14
−17
−20
ACPR
IRL
15.1
15
−60.6
−61
14.9
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 19. Single-Carrier N-CDMA Broadband Performance
@ Pout = 1 Watt Avg.
50
40
30
−40
−45
−50
−55
−60
−65
V
= 28 Vdc, I = 130 mA
DQ
DD
f = 1960 MHz, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
η
D
20
10
0
ACPR
0.1
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 20. Single-Carrier N-CDMA ACPR and Drain
Efficiency versus Output Power
MRF6S20010NR1 MRF6S20010GNR1
12
RF Device Data
Freescale Semiconductor
N-CDMA TEST SIGNAL
100
10
−10
−20
−30
1.2288 MHz
Channel BW
.
.
.
.
.
.
.
. .
..
. .
... .. . .
.. ..
.
.. . .. ..
.
. .
.
.
. .
. . . .
.
.
.
.
. .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
−ALT1 in 12.5 kHz
Integrated BW
+ALT1 in 12.5 kHz
Integrated BW
1
.
−40
−50
−60
−70
−80
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
0.1
0.01
.
.
.
..
.
.
.
.
.
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. ALT1 Measured in 12.5 kHz
Bandwidth @ 1.25 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
..
.
.
. .
.
.
. .
. ..
. . .
.
. .
.
.
.
..
.. ..
. . .
. .
... .
. .
.
.
.
. ..
. ..
.
.
.
.
..
.
...
.
.
.
.
.
.
..
.
.
.
.
.
.
.
.
.
..
. .
. .
.
.
..
.
.
.
.
.
..
.
.
.
.
.
.
..
.
.
. .
..
.
.
.
.
.
.
.
.
.
..
.
.
.
..
.
.
.
.
.
..
.
.
..
..
.
.
.
...
..
.
.
.
.
..
.
.
.
.
.
. .
.
..
..
..
.
.. .
.
.
.
..
.
.
..
.
..
0.001
...
.
..
.. .
.
..
.
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW Integrated BW
.
.
. .
. .
.
..
..
.
. .
.
.
.
.....
. ..
.
.
. . .
..
. .
.
.
.
. ..
. .
. ..
.
. .
. .
.. .
..
.
.
...
.
.
..
.
.
.
.
. .
.
..
....
.
.
.
.
.
.
.
.
.
.
.
.
..
−90 .
. .
.
0.0001
0
2
4
6
8
10
−100
PEAK−TO−AVERAGE (dB)
−110
−3.6 −2.9 −2.2 −1.5 −0.7
Figure 21. Single-Carrier CCDF N-CDMA
0
0.7 1.5
2.2 2.9 3.6
f, FREQUENCY (MHz)
Figure 22. Single-Carrier N-CDMA Spectrum
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
13
GSM EDGE TYPICAL CHARACTERISTICS — 1805-1880 MHz
R1
V
SUPPLY
V
BIAS
+
R2
Z9
R3
C11
C1
C7
Z7
C3
C4
C5
Z17
Z10
RF
OUTPUT
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z8
Z11
Z12
Z13
Z14
Z15
Z16
C2
C6
DUT
Z18
C8
C9
C10
Z1, Z16
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.066″ x 0.480″ Microstrip
0.066″ x 0.137″ Microstrip
0.236″ x 0.236″ Microstrip
0.066″ x 0.354″ Microstrip
0.551″ x 0.512″ Microstrip
0.066″ x 0.079″ Microstrip
0.591″ x 0.189″ Microstrip
0.591″ x 0.334″ Microstrip
0.050″ x 0.980″ Microstrip
Z10
1.142″ x 0.350″ Microstrip
1.142″ x 0.516″ Microstrip
0.433″ x 0.276″ Microstrip
0.276″ x 0.157″ Microstrip
0.236″ x 0.433″ Microstrip
0.066″ x 0.104″ Microstrip
0.050″ x 1.250″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z17, Z18
PCB
Taconic RF-35, 0.030″, ε = 3.5
r
Figure 23. MRF6S20010NR1(GNR1) Test Circuit Schematic — 1805-1880 MHz
Table 8. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values —1805-1880 MHz
Part
Description
100 nF Chip Capacitor (1206)
4.7 pF 600B Chip Capacitors
9.1 pF 600B Chip Capacitors
10 μF Chip Capacitors (2220)
10 μF, 35 V Tantalum Chip Capacitor
10 kΩ Chip Resistors (1206)
10 Ω Chip Resistor (1206)
Part Number
1206C104KAT
Manufacturer
AVX
C1
C2, C6
C3, C7, C8
600B4R7BW
ATC
ATC
TDK
AVX
600B9R1BW
C4, C5, C9, C10
C5750X5R1H106MT
TAJD106K035
C11
R1, R2
R3
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
14
GSM EDGE TYPICAL CHARACTERISTICS — 1805-1880 MHz
V
DD
V
GS
R2 C1
C11
C4
C5
C3
C7
R1
R3
C6
C2
C8
C9 C10
MRF6S20010N
Rev. 0
Figure 24. MRF6S20010NR1(GNR1) Test Circuit Component Layout — 1805-1880 MHz
MRF6S20010NR1 MRF6S20010GNR1
15
RF Device Data
Freescale Semiconductor
GSM EDGE TYPICAL CHARACTERISTICS — 1805-1880 MHz
17
16
50
40
0
G
ps
−10
η
D
−20
−30
−40
15
14
13
30
20
10
IRL
V
= 28 Vdc
= 130 mA
DD
I
DQ
1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900
f, FREQUENCY (MHz)
Figure 25. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 4 Watts
6
5
4
3
2
60
50
40
30
20
V
I
= 28 Vdc
= 130 mA
DD
DQ
f = 1840 MHz
η
D
EVM
10
0
1
0
0.1
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 26. Error Vector Magnitude and Drain
Efficiency versus Output Power
GSM EDGE TEST SIGNAL
−50
−55
−60
−65
−70
−10
Reference Power
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
V
= 28 Vdc
= 130 mA
−20
−30
DD
I
DQ
f = 1840 MHz
−40
−50
SR @ 400 kHz
−60
400 kHz
−70
400 kHz
−80
600 kHz
600 kHz
−90
SR @ 600 kHz
−75
−80
−100
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
0.1
1
10
P
, OUTPUT POWER (WATTS)
out
Figure 27. Spectral Regrowth at 400 kHz and
600 kHz versus Output Power
Figure 28. EDGE Spectrum
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
16
2170 MHz
= 28 Vdc, I = 130 mA, P = 10 W PEP
Z = 25 Ω
o
V
DD
DQ
out
f
Z
Z
load
source
MHz
Ω
Ω
2110
2140
2170
3.619 + j0.792 2.544 + j3.068
3.918 + j0.797 2.673 + j3.291
4.087 + j0.558 2.818 + j3.406
f = 2170 MHz
f = 2110 MHz
Z
load
f = 2170 MHz
f = 2110 MHz
Z
source
Z = 25 Ω
o
1900 MHz
V
= 28 Vdc, I = 130 mA, P = 1 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
f = 1990 MHz
f = 1930 MHz
1930
1960
1990
9.237 + j1.849 2.770 + j3.497
9.521 + j2.144 2.754 + j3.668
9.889 + j2.434 2.772 + j3.833
Z
load
f = 1990 MHz
Z
source
f = 1930 MHz
1800 MHz
V
= 28 Vdc, I = 130 mA, P = 4 W Avg.
DQ out
DD
Z = 25 Ω
o
f
Z
Z
load
source
MHz
Ω
Ω
1805 13.237 + j5.810 2.445 + j3.698
1840 13.953 + j6.084 2.542 + j3.942
1880 14.858 + j6.279 2.695 + j4.170
f = 1880 MHz
f = 1805 MHz
Z
load
Z
f = 1805 MHz
source
f = 1880 MHz
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
load
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 29. Series Equivalent Source and Load Impedance
MRF6S20010NR1 MRF6S20010GNR1
17
RF Device Data
Freescale Semiconductor
Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TC = 255C, 50 ohm system)
S
S
S
S
22
f
11
21
12
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
500
550
0.984
0.986
0.985
0.986
0.982
0.983
0.983
0.979
0.980
0.977
0.978
0.972
0.972
0.963
0.964
0.956
0.948
0.939
0.927
0.910
0.889
0.861
0.821
0.780
0.722
0.666
0.618
0.603
0.614
0.654
0.701
0.747
0.783
0.816
0.842
0.864
0.882
0.894
0.906
0.910
-178.1
-179.0
179.9
178.9
177.9
177.2
176.5
175.5
174.8
174.0
173.2
172.4
171.4
170.8
169.9
169.0
167.8
167.0
165.7
164.5
163.2
161.9
160.9
160.1
160.6
162.5
167.0
173.3
179.7
-175.6
-173.5
-172.7
-172.6
-172.9
-173.6
-174.2
-175.0
-175.7
-176.4
-176.9
1.195
0.947
0.747
0.581
0.446
0.336
0.248
0.188
0.168
0.183
0.223
0.276
0.335
0.396
0.461
0.531
0.604
0.685
0.772
0.869
0.975
1.093
1.221
1.356
1.491
1.606
1.687
1.706
1.673
1.591
1.484
1.364
1.242
1.136
1.042
0.961
0.888
0.822
0.764
0.712
42.42
40.48
39.66
39.89
41.80
46.70
56.02
72.74
96.69
119.3
134.3
142.2
146.4
148.5
148.8
148.2
146.9
144.8
142.2
138.7
134.7
129.7
123.8
116.7
108.3
98.77
88.09
76.98
66.08
55.96
47.04
39.29
32.87
27.69
23.26
19.26
15.75
12.69
9.857
7.587
0.001
0.001
0.001
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.004
0.004
0.005
0.005
0.006
0.007
0.007
0.008
0.008
0.009
0.010
0.010
0.011
0.012
0.013
0.014
0.014
0.013
0.012
0.011
0.010
0.008
0.006
0.004
0.004
0.005
0.006
0.008
0.009
0.008
-129.1
-159.2
147.4
119.1
108.1
102.9
96.99
97.40
94.63
91.92
92.80
89.92
89.90
87.51
89.25
86.98
85.08
82.40
79.69
77.79
75.79
72.86
69.89
63.71
57.70
49.85
41.19
32.65
25.40
20.73
15.11
10.13
6.333
15.63
42.20
57.76
62.56
59.72
49.09
39.24
0.875
0.892
0.905
0.913
0.927
0.935
0.941
0.947
0.951
0.955
0.960
0.962
0.966
0.977
0.971
0.977
0.982
0.986
0.988
0.994
0.991
0.993
0.996
0.984
0.985
0.977
0.970
0.958
0.954
0.945
0.947
0.947
0.945
0.944
0.944
0.948
0.948
0.949
0.951
0.955
-116.3
-121.6
-125.9
-129.9
-133.4
-136.4
-139.5
-141.9
-144.4
-146.6
-148.6
-150.5
-152.2
-153.7
-155.2
-156.8
-157.9
-159.5
-160.7
-162.1
-163.4
-164.7
-166.0
-167.4
-168.5
-169.6
-170.8
-171.3
-171.9
-172.3
-172.6
-173.0
-173.6
-173.9
-174.2
-174.6
-175.2
-175.7
-176.1
-176.5
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
18
Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TC = 255C, 50 ohm system) (continued)
S
S
S
S
22
f
11
21
12
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
0.923
0.927
0.937
0.937
0.942
0.945
0.946
0.950
0.949
0.952
0.950
0.958
0.953
0.957
0.960
-177.5
-178.0
-178.8
-179.0
-179.8
-179.9
179.5
179.3
178.8
178.5
178.4
177.9
177.7
177.2
177.4
0.666
0.625
0.591
0.559
0.529
0.504
0.479
0.456
0.436
0.419
0.402
0.387
0.373
0.362
0.350
5.462
0.006
0.006
0.006
0.007
0.007
0.007
0.007
0.007
0.008
0.009
0.011
0.012
0.013
0.014
0.013
42.56
52.25
60.26
64.14
65.62
64.71
67.58
75.44
82.04
83.60
83.41
81.35
77.45
70.98
67.00
0.957
0.962
0.961
0.964
0.964
0.964
0.966
0.966
0.964
0.967
0.968
0.964
0.969
0.970
0.970
-177.2
-177.8
-178.4
-179.1
-179.6
179.7
179.4
178.8
178.3
177.9
177.4
176.8
176.4
176.2
175.5
3.680
1.864
0.237
-1.378
-2.768
-4.088
-5.412
-6.305
-7.279
-8.087
-9.138
-9.904
-10.86
-11.79
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
19
PACKAGE DIMENSIONS
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
20
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
21
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
22
E1
B
2X
D3
2X
E4
PIN ONE ID
GAGE
L1
PLANE
M
aaa
C A
L
e
A1
D
M
2X
b1
D1
DETAIL Y
aaa
C A
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
E
A
M
bbb
C B
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
DETAIL Y
H
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
A
A2
7. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
2X
E2
c1
SEATING
PLANE
D
E5
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.98
0.02
1.96
10.57
9.60
7.37
0.41
8.03
6.04
1.68
3.81
1.47
5.87
4.90
MAX
2.08
0.10
2.24
10.77
9.70
8.13
0.61
8.23
6.15
1.88
4.57
1.68
5.97
5.06
A
A1
A2
D
.078
.001
.077
.416
.378
.290
.016
.316
.238
.066
.150
.058
.231
.018
.082
.004
.088
.424
.382
.320
.024
.324
.242
.074
.180
.066
.235
.024
E5
E3
EXPOSED
D1
D2
D3
E
HEATSINK AREA
PIN 1
PIN 2
E1
E2
E3
E4
E5
L
D2
L1
b1
c1
e
.01 BSC
0.25 BSC
.193
.007
.199
.011
4.90
0.18
5.06
0.28
°
°
°
°
8
2
8
2
aaa
.004
0.10
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
BOTTOM VIEW
CASE 1265A-02
ISSUE B
TO-270-2 GULL
PLASTIC
MRF6S20010GNR1
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
23
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Document Number: MRF6S20010N
Rev. 1, 5/2006
相关型号：
MRF6S20010NR1_09
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