MRF6S27015NR1_08 [FREESCALE]
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; 射频功率场效应晶体管N沟道增强模式横向的MOSFET
| 型号： | MRF6S27015NR1_08 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 文件： | 总19页 (文件大小：634K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S27015N
Rev. 2, 12/2008
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27015NR1
MRF6S27015GNR1
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ
160 mA, Pout = 3 Watts Avg., f = 2600 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
=
2300-2700 MHz, 3 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — -45 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 1265-09, STYLE 1
TO-270-2
PLASTIC
MRF6S27015NR1
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
CASE 1265A-03, STYLE 1
TO-270-2 GULL
PLASTIC
MRF6S27015GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +12
-65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
V
DSS
V
GS
T
stg
T
°C
C
(1,2)
Operating Junction Temperature
T
225
°C
J
Table 2. Thermal Characteristics
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 7.5 W Avg., Two-Tone
Case Temperature 79°C, 3 W CW
R
θ
JC
°C/W
2.0
2.2
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
nAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
500
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 40 μAdc)
V
V
1.5
—
2.2
2.8
3.5
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 160 mAdc)
DS
D
(1)
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 160 mAdc, Measured in Functional Test)
V
2.2
—
3.1
4.4
0.4
DD
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 0.4 Adc)
V
0.27
GS
D
(2)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
11.6
22.9
—
—
pF
pF
rss
GS
Output Capacitance
C
oss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(3)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 160 mA, P = 3 W Avg., f = 2600 MHz, Single-Carrier
DD DQ out
W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
G
12.5
19
14
22
16
—
dB
%
ps
Drain Efficiency
η
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
—
-45
-18
-42
-9
dBc
dB
—
1. V
= 11/10 x V . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
GS(Q)
GG
schematic.
2. Part internally input matched.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
2
R1
V
V
BIAS
SUPPLY
+
R2
C4
C7
C8
C11
C1
Z4
C2
Z7
R3
Z18
RF
OUTPUT
Z8 Z9 Z10
Z11 Z12 Z13 Z14
Z15 Z16
Z17
RF
INPUT
Z1
Z2
Z3
Z5
Z6
C6
Z19
C3
DUT
V
SUPPLY
C5
C9
C10
Z1
0.503″ x 0.066″ Microstrip
0.905″ x 0.066″ Microstrip
Z11
0.143″ x 0.816″ Microstrip
0.101″ x 0.667″ Microstrip
0.073″ x 0.485″ Microstrip
0.120″ x 0.021″ Microstrip
0.407″ x 0.170″ Microstrip
0.714″ x 0.066″ Microstrip
0.496″ x 0.066″ Microstrip
0.475″ x 0.050″ Microstrip
0.480″ x 0.050″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.371″ x 0.300″ x 0.049″ Taper
0.041″ x 0.016″ Microstrip
0.245″ x 0.851″ Microstrip
0.248″ x 0.851″ Microstrip
0.973″ x 0.050″ Microstrip
0.085″ x 0.485″ Microstrip
0.091″ x 0.667″ Microstrip
0.138″ x 0.816″ Microstrip
Taconic RF-35, 0.030″, ε = 3.5
r
Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic
Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Kemet
C1
100 nF Chip Capacitor
CDR33BX104AKYS
C2
4.7 pF Chip Capacitor
ATC100B4R7BT500XT
ATC100B9R1BT500XT
ATC100B8R2BT500XT
GRM55DR61H106KA88L
T491D106K035AT
ATC
C3
9.1 pF Chip Capacitor
ATC
C4, C5, C6
8.2 pF Chip Capacitors
ATC
C7, C8, C9, C10
10 μF, 50 V Chip Capacitors
10 μF, 35 V Tantalum Chip Capacitor
1 KΩ, 1/4 W Chip Resistor
10 KΩ,1/4 W Chip Resistor
10 Ω, 1/4 W Chip Resistor
Murata
Kemet
Vishay
Vishay
Vishay
C11
R1
R2
R3
CRCW12061001FKEA
CRCW12061002FKEA
CRCW120610R0FKEA
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
3
C4
C1
C2
R2
C11
R1
C7 C8
R3
C3
C6
C9 C10
C5
MRF6S27015N Rev. 3
Figure 2. MRF6S27015NR1(GNR1) Test Circuit Component Layout
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
16
15
14
24
23
22
G
ps
13
12
21
20
V
= 28 Vdc, P = 3 W (Avg.)
out
= 160 mA, Single−Carrier W−CDMA
DD
η
D
I
DQ
−5
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
11
10
9
−30
−40
−50
−60
−10
−15
ACPR
ALT1
−20
−25
8
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W-CDMA Broadband Performance
@ Pout = 3 Watts Avg.
15
14
13
32
31
30
G
ps
V
I
= 28 Vdc, P = 6 W (Avg.)
out
= 160 mA, Single−Carrier W−CDMA
DD
12
11
29
28
η
D
DQ
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−5
IRL
10
9
−30
−40
−50
−60
−10
−15
ACPR
ALT1
8
−20
−25
7
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W-CDMA Broadband Performance
@ Pout = 6 Watts Avg.
−10
16
15
14
13
12
I
= 240 mA
DQ
V
= 28 Vdc
DD
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements
190 mA
I
= 80 mA
160 mA
130 mA
DQ
240 mA
190 mA
80 mA
V
= 28 Vdc
DD
130 mA
f1 = 2592 MHz, f2 = 2605 MHz
Two−Tone Measurements
160 mA
1
10
1
10
, OUTPUT POWER (WATTS) PEP
P
P
, OUTPUT POWER (WATTS) PEP
out
out
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
−15
−20
−25
−30
−25
V
I
= 28 Vdc, P = 15 W (PEP)
out
= 160 mA
V
= 28 Vdc, I = 160 mA
DQ
f1 = 2595 MHz, f2 = 2605 MHz
DD
DD
IM3−U
IM3−L
−30
−35
−40
−45
−50
−55
−60
DQ
Two−Tone Measurements, 10 MHz Tone Spacing
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
−35
−40
−45
3rd Order
5th Order
IM5−U
IM5−L
IM7−U
IM7−L
−50
−55
−60
−65
7th Order
1
10
, OUTPUT POWER (WATTS) PEP
1
10
TWO−TONE SPACING (MHz)
100
P
out
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
50
Ideal
P6dB = 44.3 dBm (27 W)
49
48
P3dB = 43.7 dBm (23 W)
47
46
45
44
43
P1dB = 43 dBm (20 W)
Actual
42
41
40
V
= 28 Vdc, I = 160 mA
DQ
DD
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
26
27
28
29
30
31
32
33
34
35
36
P , INPUT POWER (dBm)
in
Figure 9. Pulsed CW Output Power versus
Input Power
50
45
40
35
30
25
20
15
10
5
−20
−25
V
= 28 Vdc, I = 160 mA, f = 2600 MHz
DQ
DD
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
−30
−35
−40
−45
−50
−55
−60
−65
ALT1
ACPR
η
D
G
ps
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 10. Single-Carrier W-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
18
17
16
15
14
13
12
11
10
64
15
14
13
12
11
10
I
= 160 mA
f = 2600 MHz
DQ
56
48
40
32
24
16
−30_C
G
ps
T = −30_C
C
25_C
85_C
25_C
85_C
η
D
32 V
28 V
V
= 28 Vdc
= 160 mA
V
= 24 V
DD
DD
I
DQ
f = 2600 MHz
8
0
1
10
, OUTPUT POWER (WATTS) CW
5
10
15
20
25
30
P
, OUTPUT POWER (WATTS) CW
P
out
out
Figure 12. Power Gain versus Output Power
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
9
25
20
15
10
5
3
10
V
= 28 Vdc, I = 160 mA
DQ
DD
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
2.5
2
8
7
6
10
10
10
1.5
η
D
1
EVM
0.5
0
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
, OUTPUT POWER (dBm)
90
110
130
150
170
190
210
230
250
P
T , JUNCTION TEMPERATURE (°C)
J
out
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 3 W Avg., and η = 22%.
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
DD
out
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 14. MTTF versus Junction Temperature
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
7
W-CDMA TEST SIGNAL
100
10
−10
−20
−30
3.84 MHz
Channel BW
1
−40
−50
−60
−70
−80
−90
0.1
0.01
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF
0.001
−ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
0.0001
0
2
4
6
8
10
−100
−110
PEAK−TO−AVERAGE (dB)
Figure 15. CCDF W-CDMA 3GPP, Test Model 1,
−9 −7.2 −5.4 −3.6 −1.8
0
1.8 3.6
5.4 7.2
9
64 DPCH, 67% Clipping, Single-Carrier Test Signal
f, FREQUENCY (MHz)
Figure 16. Single-Carrier W-CDMA Spectrum
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
8
Z = 5 Ω
o
f = 2700 MHz
Z
load
f = 2500 MHz
f = 2700 MHz
f = 2500 MHz
Z
source
V
= 28 Vdc, I = 160 mA, P = 3 W Avg.
DQ out
DD
f
Z
Z
load
W
source
W
MHz
2500
2525
2550
2575
2600
2625
2650
2675
2700
4.059 - j2.284
3.679 - j2.593
3.006 - j2.574
2.355 - j2.190
2.075 - j1.657
1.930 - j1.179
1.973 - j0.771
2.017 - j0.557
2.024 - j0.379
3.380 - j0.543
3.265 - j0.546
3.077 - j0.449
2.892 - j0.336
2.727 - j0.182
2.564 - j0.034
2.435 + j0.140
2.286 + j0.340
2.227 + j0.538
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 17. Series Equivalent Source and Load Impedance
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
9
Table 7. Common Source Scattering Parameters (V = 28 V, I = 160 mA, T = 25°C, 50 ohm system)
DD
DQ
C
S
S
S
S
22
f
11
21
12
MHz
|S
|
∠ φ
|S
|
∠ φ
39.2
36.5
34.4
33.0
32.3
32.5
34.1
37.7
44.5
56.5
75.6
98.9
|S
|
∠ φ
-109.8
-121.0
159.6
118.4
106.5
104.2
96.0
95.6
94.0
91.2
91.2
89.9
89.2
88.9
87.4
86.5
86.3
84.6
84.8
86.9
92.5
100.3
93.7
83.6
75.4
69.1
62.8
55.8
48.2
40.3
33.2
26.5
22.1
19.8
19.7
19.7
19.6
22.6
|S |
22
∠ φ
11
21
12
500
550
0.984
0.984
0.986
0.987
0.987
0.986
0.985
0.985
0.984
0.983
0.982
0.981
0.980
0.978
0.976
0.974
0.970
0.966
0.960
0.953
0.945
0.933
0.918
0.901
0.879
0.850
0.815
0.775
0.734
0.700
0.683
0.687
0.710
0.741
0.774
0.805
0.832
0.855
-178.2
-179.0
180.0
179.0
178.1
177.3
176.5
175.8
175.1
174.5
173.8
173.2
172.5
171.9
171.2
170.5
169.8
169.0
168.3
167.5
166.6
165.8
164.9
164.1
163.2
162.5
162.2
162.5
164.0
167.0
171.0
175.1
178.5
-179.3
-178.2
-177.8
-177.9
-178.2
1.453
1.180
0.958
0.776
0.627
0.502
0.397
0.308
0.235
0.180
0.146
0.142
0.163
0.199
0.243
0.291
0.342
0.395
0.452
0.514
0.580
0.655
0.738
0.828
0.925
1.030
1.139
1.246
1.337
1.399
1.420
1.396
1.338
1.259
1.169
1.079
0.993
0.917
0.001
0.000
0.000
0.001
0.001
0.001
0.002
0.002
0.003
0.003
0.003
0.004
0.004
0.005
0.005
0.006
0.006
0.006
0.006
0.007
0.007
0.009
0.011
0.013
0.014
0.014
0.015
0.016
0.016
0.015
0.015
0.014
0.012
0.011
0.010
0.009
0.008
0.007
0.870
0.888
0.901
0.911
0.921
0.931
0.940
0.944
0.951
0.956
0.962
0.965
0.969
0.973
0.976
0.980
0.983
0.986
0.988
0.990
0.993
0.992
0.994
0.996
0.997
0.998
0.995
0.991
0.984
0.976
0.966
0.957
0.951
0.948
0.947
0.947
0.948
0.950
-122.3
-127.6
-132.0
-135.8
-139.1
-142.1
-144.8
-147.3
-149.5
-151.5
-153.4
-155.2
-156.8
-158.3
-159.8
-161.1
-162.4
-163.7
-164.9
-166.1
-167.3
-168.4
-169.4
-170.4
-171.6
-172.8
-173.9
-175.0
-176.0
-176.9
-177.6
-178.0
-178.3
-178.6
-178.9
-179.2
-179.5
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
118.0
129.9
136.6
140.2
141.8
142.1
141.5
140.2
138.4
135.9
132.5
128.4
123.5
117.6
110.8
102.7
93.6
83.5
73.1
62.9
53.4
45.0
37.6
31.1
25.8
21.2
-179.9
(continued)
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
10
Table 7. Common Source Scattering Parameters (V = 28 V, I = 160 mA, T = 25°C, 50 ohm system) (continued)
DD
DQ
C
S
S
S
S
22
f
11
21
12
MHz
|S
|
∠ φ
|S
|
∠ φ
17.2
13.7
10.6
7.9
|S
|
∠ φ
31.2
42.2
45.6
46.5
48.0
47.0
45.8
52.1
62.3
69.8
73.2
78.7
85.1
87.9
88.2
86.9
85.1
|S |
22
∠ φ
11
21
12
2400
2450
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
0.873
0.887
0.897
0.907
0.914
0.919
0.926
0.931
0.936
0.940
0.942
0.945
0.947
0.949
0.950
0.953
0.955
-178.8
-179.4
-179.9
179.6
179.1
178.8
178.3
177.9
177.4
177.0
176.6
176.3
175.8
175.6
175.1
174.8
174.5
0.848
0.786
0.731
0.682
0.639
0.600
0.566
0.534
0.505
0.480
0.457
0.436
0.416
0.399
0.382
0.368
0.355
0.006
0.006
0.007
0.007
0.007
0.007
0.007
0.006
0.006
0.006
0.007
0.007
0.008
0.009
0.011
0.012
0.014
0.953
0.955
0.956
0.957
0.958
0.960
0.962
0.964
0.965
0.966
0.967
0.968
0.969
0.969
0.970
0.972
0.974
179.7
179.2
178.7
178.2
177.8
177.2
176.8
176.2
175.7
175.2
174.7
174.2
173.8
173.2
172.9
172.6
172.1
5.5
3.3
1.3
-0.6
-2.2
-3.8
-5.2
-6.5
-7.6
-8.7
-9.6
-10.5
-11.5
MRF6S27015NR1 MRF6S27015GNR1
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Aug. 2006
June 2007
•
Initial Release of Data Sheet
•
•
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150_C, p. 1
Operating Junction Temperature increased from 200_C to 225_C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200_C to
225_C in Capable Plastic Package bullet, p, 1
•
Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for V
,
GS(Q)
and added Fixture Gate Quiescent Voltage, V
to On Characteristics table, p. 2
GG(Q)
•
•
•
V
Typ and Min values corrected in On Characteristics table, p. 2
DS(on)
Output Capacitance Typ value corrected in Dynamic Characteristics table, p. 2
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
2
•
•
Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps and listed
operating characteristics and location of MTTF calculator for device, p. 7
Fig. 15, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test Signal,
updated to remove IM3 measurement copy from callout in graph, p. 8
•
•
Updated Fig. 16, Single-Carrier W-CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 8
2
Dec. 2008
Changed Typical Performance Full Frequency Band to f = 2600 MHz to match Functional Test specification,
p. 1
•
•
Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for
standardization across products, p. 1
Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 12-14. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
•
Replaced Case Outline 1265A-02 with 1265A-03, Issue C, p. 1, 15-17. Corrected cross hatch pattern and
its dimensions (D2 and E2) on source contact (D2 changed from Min-Max .290-.320 to .290 Min; E3
changed from Min-Max .150-.180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull-wing foot from 4.90-5.06 Min-Max to 0.46-0.61 Min-Max. Added JEDEC Standard Package Number.
•
•
Added footnote, Measurement made with device in straight lead configuration before any lead forming
operation is applied, to Functional Tests table, p. 2.
Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
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Document Number: MRF6S27015N
Rev. 2,12/2008
相关型号：
MRF6S27085HR3_08
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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