MRF6V12250HSR3 [FREESCALE]
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs; 射频功率场效应晶体管N - 沟道增强 - 模式横向的MOSFET
| 型号： | MRF6V12250HSR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| 文件： | 总13页 (文件大小：1274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6V12250H
Rev. 2, 4/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF6V12250HR3
MRF6V12250HSR3
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 960 and 1215 MHz. These devices are suitable for use in pulsed
applications.
•
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 100 mA, Pout =
960--1215 MHz, 275 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFETs
275 Watts Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 μsec,
Duty Cycle = 10%
Power Gain — 20.3 dB
Drain Efficiency — 65.5%
•
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak
Power
Typical Broadband Performance: VDD = 50 Volts, IDQ = 100 mA, Pout
250 Watts Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =
128 μsec, Duty Cycle = 10%
=
Power Gain — 19.8 dB
CASE 465--06, STYLE 1
NI--780
Drain Efficiency — 58%
Features
MRF6V12250HR3
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
CASE 465A--06, STYLE 1
NI--780S
•
•
MRF6V12250HSR3
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +100
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 275 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
Z
θ
0.08
°C/W
JC
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
110
—
—
—
—
—
10
—
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 100 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
10
μAdc
μAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
100
(V = 90 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 662 μAdc)
V
V
0.9
1.7
—
1.7
2.4
2.4
3.2
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.6 Adc)
V
0.25
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.46
352
695
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 275 W Peak (27.5 W Avg.), f = 1030 MHz,
DD
DQ
out
Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G
19
20.3
65.5
-- 1 4
22
—
-- 9
dB
%
ps
D
Drain Efficiency
η
63
Input Return Loss
IRL
—
dB
Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) V = 50 Vdc,
DD
I
= 100 mA, P = 250 W Peak (25 W Avg.), f = 960--1215 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
DQ
out
Power Gain
G
—
—
19.8
58
—
dB
%
ps
D
Drain Efficiency
η
—
1. Part internally matched both on input and output.
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
2
V
SUPPLY
+
+
R4
R3
V
BIAS
C12
C13
C14
C15
C8
C7
C6
Z14
RF
OUTPUT
Z11
Z10
Z13
Z16 Z17 Z18 Z19 Z20 Z21 Z22
Z23
RF
INPUT
C5
C9
Z1
Z2 Z3 Z4 Z5 Z6 Z7
Z8
R2
Z9
Z15
C1
DUT
C4
Z12
R1
C10
C11
C2
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.055″ x 0.082″ Microstrip
0.100″ x 0.082″ Microstrip
0.084″ x 0.395″ Microstrip
0.419″ x 0.040″ Microstrip
0.498″ x 0.466″ Microstrip
0.110″ x 1.060″ Microstrip
0.050″ x 1.300″ Microstrip
0.092″ x 1.300″ Microstrip
0.219″ x 1.420″ Microstrip
0.087″ x 1.420″ Microstrip
0.187″ x 0.050″ Microstrip
Z13
Z14, Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
0.190″ x 1.250″ Microstrip
0.517″ x 0.080″ Microstrip
0.225″ x 1.250″ Microstrip
0.860″ x 0.975″ Microstrip
0.140″ x 0.950″ Microstrip
0.028″ x 0.110″ Microstrip
0.397″ x 0.040″ Microstrip
0.264″ x 0.480″ Microstrip
0.100″ x 0.082″ Microstrip
0.521″ x 0.082″ Microstrip
Z9
Z10
Z11, Z12
Z23
PCB
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
Figure 1. MRF6V12250HR3(HSR3) Test Circuit Schematic
Table 5. MRF6V12250HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
ATC100B1R5BT500XT
G2225X7R225KT3AB
ATC100B330JT500XT
TPSD226M025R0200
ATC100B9R1CT500XT
MCGPA63V477M13X26--RH
CRCW12060000Z0EA
Manufacturer
ATC
C1, C4, C5
1.5 pF Chip Capacitors
C2, C7, C11, C13
C3, C6, C10, C12
C8
2.2 μF, 100 V Chip Capacitors
33 pF Chip Capacitors
ATC
ATC
22 μF, 25 V Chip Capacitor
9.1 pF Chip Capacitor
AVX
C9
ATC
C14, C15
470 μF, 63 V Electrolytic Capacitors
0 Ω, 3.5 A Chip Resistors
Multicomp
Vishay
R1, R2, R3, R4
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
3
MRF6V12250H
Rev. 0
R4
C8
C7
C15
C14
C13
R3
C6
C5
C4
C12
C10
C1
C9
C3
R2
C11
C2
R1
Figure 2. MRF6V12250HR3(HSR3) Test Circuit Component Layout
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
1000
100
160
140
C
oss
C
iss
120
100
80
P
= 250 W
out
P
= 275 W
out
10
1
P
= 200 W
out
60
40
V
= 50 Vdc, I = 100 mA
DQ
DD
C
rss
20
0
Measured with ±30 mV(rms)ac @ 1 MHz
f = 1030 MHz, Pulse Width = 128 μsec
V
= 0 Vdc
GS
0.1
0
5
10
15
20
25
30
35
40
0
10
V
20
30
40
50
DUTY CYCLE (%)
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
Figure 4. Safe Operating Area
Figure 3. Capacitance versus Drain--Source Voltage
24
70
60
59
58
Ideal
P3dB = 55.29 dBm (338 W)
22
20
P1dB = 54.76 dBm (299 W)
57
56
55
54
53
52
51
50
49
48
60
50
40
30
G
ps
Actual
η
D
18
16
V
= 50 Vdc, I = 100 mA, f = 1030 MHz
DQ
V
= 50 Vdc, I = 100 mA, f = 1030 MHz
DQ
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
DD
Pulse Width = 128 μsec, Duty Cycle = 10%
50
100
400
28
30
32
34
36
38
40
P
, OUTPUT POWER (WATTS) PULSED
P , INPUT POWER (dBm) PULSED
in
out
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 6. Pulsed Output Power versus
Input Power
22
21
20
19
18
17
22
21
I
= 100 mA, f = 1030 MHz
DQ
Pulse Width = 128 μsec
I
= 400 mA
DQ
Duty Cycle = 10%
20
19
18
17
16
15
300 mA
200 mA
100 mA
50 V
45 V
V
= 50 Vdc, f = 1030 MHz
40 V
DD
V
= 30 V 35 V
DD
Pulse Width = 128 μsec, Duty Cycle = 10%
50
100
400
50
100
, OUTPUT POWER (WATTS) PULSED
400
P
, OUTPUT POWER (WATTS) PULSED
P
out
out
Figure 8. Pulsed Power Gain versus
Output Power
Figure 7. Pulsed Power Gain versus
Output Power
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
400
300
200
100
0
24
72
60
-- 3 0 _C
85_C
T
= --30_C
C
25_C
55_C
85_C
25_C
55_C
G
22
20
18
16
ps
T
= --30_C
C
25_C
48
36
55_C
85_C
V
= 50 Vdc, I = 100 mA, f = 1030 MHz
DQ
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
V
= 50 Vdc, I = 100 mA, f = 1030 MHz
DQ
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
η
D
24
0
1
2
3
4
5
6
50
100
400
P , INPUT POWER (WATTS) PULSED
in
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 9. Pulsed Output Power versus
Input Power
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
9
10
8
10
7
10
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 275 W Peak, Pulse Width = 128 μsec,
DD
out
Duty Cycle = 10%, and η = 65.5%.
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
6
Z = 5 Ω
o
Z
load
f = 1030 MHz
Z
source
f = 1030 MHz
V
= 50 Vdc, I = 100 mA, P = 275 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1030
2.30 -- j3.51
4.0 -- j2.14
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 12. Series Equivalent Source and Load Impedance
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
7
C8
C6
C4
C14
C13
C10
C2
C12
R1
C1
C11
MRF6V12250H
960--1215 MHz
Rev. 0
C3
C5
C9
C7
R2
Figure 13. MRF6V12250HR3(HSR3) Test Circuit Component Layout — 960--1215 MHz
Table 6. MRF6V12250HR3(HSR3) Test Circuit Component Designations and Values — 960--1215 MHz
Part
Description
Part Number
ATC100B2R7BT500XT
ATC100B330JT500XT
ATC100B102JT50XT
G2225X7R225KT3AB
ATC100B9R1CT500XT
TPSD226M025R0200
MCGPR63V477M13X26--RH
CRCW120647R0FKEA
AD255A
Manufacturer
C1
2.7 pF Chip Capacitor
ATC
C2, C3, C4, C5
C6, C7
33 pF Chip Capacitors
ATC
1000 pF Chip Capacitors
ATC
C8, C9, C10
C11
2.2 μF, 100 V Chip Capacitors
9.1 pF Chip Capacitor
ATC
ATC
C12
22 μF, 25 V Tantalum Capacitor
470 μF, 63 V Electrolytic Capacitors
47 Ω, 1/4 W Chip Resistors
AVX
C13, C14
R1, R2
Multicomp
Vishay
Arlon
PCB
0.030″, ε = 2.55
r
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
8
TYPICAL CHARACTERISTICS — 960--1215 MHz
26
70
V
= 50 Vdc
f = 1215 MHz
DD
I
= 100 mA
1150 MHz
DQ
24 Pulse Width = 128 μsec
60
50
40
Duty Cycle = 10%
1030 MHz
1150 MHz
960 MHz
22
η
D
1215 MHz
20
G
ps
960 MHz
18
16
30
20
1030 MHz
0
50
100
150
200
250
300
350
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 14. Pulsed Power Gain and Drain Efficiency
versus Output Power
68
21
20
19
18
17
16
15
14
13
66
64
62
60
58
0
G
ps
η
D
IRL
-- 5
-- 1 0
V
= 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.)
DQ out
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
12
11
-- 1 5
-- 2 0
950 975 1000 1025 1050 1075 1100 1125 1150 1175 1200 1225
f, FREQUENCY (MHz)
Figure 15. Broadband Performance @ Pout = 250 Watts Peak
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
9
Z = 10 Ω
o
Z
load
f = 960 MHz
f = 1215 MHz
f = 1215 MHz
f = 960 MHz
Z
source
V
= 50 Vdc, I = 100 mA, P = 250 W Peak
V
= 50 Vdc, I = 100 mA, P = 250 W Peak
DD DQ out
DD
DQ
out
f
Z
Z
load
f
Z
Z
load
source
source
MHz
Ω
Ω
MHz
1100
1110
1120
1130
1140
1150
1160
1170
1180
1190
1200
1210
1215
Ω
Ω
960
4.00 -- j4.14
4.05 -- j3.99
4.16 -- j3.86
4.33 -- j3.71
4.49 -- j3.57
4.61 -- j3.43
4.66 -- j3.33
4.68 -- j3.26
4.72 -- j3.20
4.83 -- j3.13
5.02 -- j3.06
5.24 -- j2.99
5.42 -- j2.96
5.51 -- j2.99
3.96 -- j1.70
3.90 -- j1.67
3.83 -- j1.66
3.75 -- j1.66
3.70 -- j1.65
3.68 -- j1.62
3.69 -- j1.59
3.69 -- j1.54
3.67 -- j1.52
3.59 -- j1.53
3.48 -- j1.53
3.38 -- j1.53
3.32 -- j1.51
3.30 -- j1.47
5.49 -- j3.04
5.47 -- j3.07
5.52 -- j3.09
5.68 -- j3.13
5.89 -- j3.20
6.06 -- j3.32
6.09 -- j3.47
5.98 -- j3.60
5.85 -- j3.69
5.78 -- j3.76
5.81 -- j3.87
5.89 -- j4.02
5.91 -- j4.11
3.32 -- j1.43
3.31 -- j1.42
3.24 -- j1.40
3.12 -- j1.39
2.99 -- j1.36
2.88 -- j1.30
2.83 -- j1.23
2.83 -- j1.19
2.80 -- j1.15
2.75 -- j1.11
2.65 -- j1.07
2.52 -- j1.01
2.47 -- j0.97
970
980
990
1000
1010
1020
1030
1040
1050
1060
1070
1080
1090
Z
Z
=
=
Test circuit impedance as measured from gate to ground.
Test circuit impedance as measured from drain to ground.
source
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 16. Series Equivalent Source and Load Impedance — 960--1215 MHz
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
B
G
2X
Q
1
2
M
M
M
bbb
T
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
(FLANGE)
D
INCHES
DIM MIN MAX
A
B
C
D
MILLIMETERS
M
M
M
bbb
T
A
B
MIN
33.91
9.65
MAX
34.16
9.91
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
3.18
4.32
(LID)
R
(INSULATOR)
M
N
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
M
bbb
T
A
B
ccc
aaa
T
T
A
A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
K
M
N
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
19.66
19.60
3.00
1.70
5.33
19.96
20.00
3.51
M
M
M
M
B
ccc
T
A
B
H
Q
R
S
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
PIN 1. DRAIN
A
(FLANGE)
2. GATE
3. SOURCE
CASE 465--06
ISSUE G
NI--780
MRF6V12250HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
2X K
2
B
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T
A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
-- -- --
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1 . 0 2
0 . 7 6
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
-- -- --
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
0 . 0 4 0
0 . 0 3 0
C
D
E
F
H
K
M
N
(LID)
N
(LID)
R
S
M
M
M
M
ccc
T
A
B
M
M
M
M
ccc
aaa
T
T
A
A
B
(INSULATOR)
(INSULATOR)
M
M
M
M
M
B
bbb
T
A
B
R
S
H
U
Z
-- -- --
-- -- --
C
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
3
F
SEATING
PLANE
E
A
STYLE 1:
T
PIN 1. DRAIN
A
2. GATE
5. SOURCE
(FLANGE)
CASE 465A--06
ISSUE H
NI--780S
MRF6V12250HSR3
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
May 2009
July 2009
•
•
Initial Release of Data Sheet
Updated Typical Broadband Performance bullet to include V , I and Pulsed information. Provided
DD DQ
specific values for Power Gain and Drain Efficiency, p. 1
•
•
Added Typical Performance table for 960--1215 MHz application, p. 2
Changed “EKMG630ELL471MK25S” part number to “MCGPA63V477M13X26--RH”, Table 5, Test Circuit
Component Designations and Values, p. 3
•
•
Added Fig. 5, Safe Operating Area, p. 5
Added Fig. 13, Test Circuit Component Layout -- 960--1215 MHz and Table 6, Test Circuit Component
Designations and Values -- 960--1215 MHz, p. 8
•
•
•
Added Fig. 14, Power Gain and Drain Efficiency versus Output Power -- 960--1215 MHz, p. 9
Added Fig 15, Broadband Performance @ Pout = 250 Watts Peak -- 960--1215 MHz, p. 9
Added Fig. 16, Series Equivalent Source and Load Impedance -- 960--1215 MHz, p. 10
2
Apr. 2010
•
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
•
•
Reporting of pulsed thermal data now shown using the Z
symbol, p. 1
JC
θ
Added RF High Power Model availability to Product Software, p. 12
MRF6V12250HR3 MRF6V12250HSR3
RF Device Data
Freescale Semiconductor
12
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ꢀ Freescale Semiconductor, Inc. 2009--2010. All rights reserved.
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF6V12250H
Rev. 2,4/2010
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