MRF6V12500H [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF6V12500H |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总15页 (文件大小：959K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6V12500H
Rev. 3, 6/2012
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V12500HR3
MRF6V12500HSR3
RF Power transistors designed for applications operating at frequencies
between 960 and 1215 MHz. These devices are suitable for use in pulse
applications.
•
Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA,
Pulse Width = 128 μsec, Duty Cycle = 10%
P
(W)
f
G
η
960--1215 MHz, 500 W, 50 V
PULSE
LATERAL N--CHANNEL
RF POWER MOSFETs
out
ps
D
Application
(MHz)
(dB)
19.7
18.5
(%)
62.0
57.0
Narrowband
Broadband
500 Peak
500 Peak
1030
960--1215
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 465--06, STYLE 1
NI--780
MRF6V12500HR3
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
CASE 465A--06, STYLE 1
NI--780S
MRF6V12500HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Impedance, Junction to Case
Case Temperature 80°C, 500 W Pulse, 128 μsec Pulse Width, 10% Duty Cycle
Z
θ
0.044
°C/W
JC
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010, 2012. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 2600 V
B, passes 200 V
IV, passes 2000 V
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
110
—
—
—
—
—
10
—
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 200 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
20
μAdc
μAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
200
(V = 90 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 1.32 mA)
V
V
0.9
1.7
—
1.7
2.4
2.4
3.2
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 200 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 3.26 Adc)
V
0.25
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.2
697
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
1391
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) V = 50 Vdc, I = 200 mA, P = 500 W Peak (50 W Avg.),
DD
DQ
out
f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G
18.5
58.0
—
19.7
62.0
-- 1 8
22.0
—
dB
%
ps
D
Drain Efficiency
η
Input Return Loss
IRL
-- 9
dB
Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) V = 50 Vdc,
DD
I
= 200 mA, P = 500 W Peak (50 W Avg.), f = 960--1215 MHz, 128 μsec Pulse Width, 10% Duty Cycle
DQ
out
Power Gain
G
—
—
18.5
57.0
—
—
dB
%
ps
D
Drain Efficiency
η
1. Part internally matched both on input and output.
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
2
V
SUPPLY
+
+
R3
R1
V
BIAS
C5
C12 C13
C14
C15
C9
Z3
C8
Z4
C7
C3
Z19
RF
OUTPUT
Z9
Z10
Z11 Z12 Z13 Z14 Z15 Z16 Z17
Z18
RF
INPUT
C2
Z1
Z2
Z5
Z6
Z7
Z8
Z21
C1
DUT
Z20
R4
R2
C6
C16
C11
C10
C4
Z1
0.457″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
0.605″ x 0.040″ Microstrip
0.080″ x 0.449″ Microstrip
0.374″ x 0.608″ Microstrip
0.118″ x 1.252″ Microstrip
0.778″ x 1.710″ Microstrip
0.095″ x 1.710″ Microstrip
0.482″ x 0.050″ Microstrip
0.138″ x 1.500″ Microstrip
Z11
0.161” x 1.500″ Microstrip
0.613” x 1.281″ Microstrip
0.248” x 0.865″ Microstrip
0.087” x 0.425″ Microstrip
0.309” x 0.090″ Microstrip
0.193” x 0.516″ Microstrip
0.279” x 0.080″ Microstrip
0.731” x 0.080″ Microstrip
0.507” x 0.040″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z9, Z20
Z10
Z19, Z21
PCB
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic
Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
ATC
C1, C2
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC100B330JT500XT
GRM55DR61H106KA88L
2225X7R225KT3AB
C3, C4, C5, C6
C7, C10
33 pF Chip Capacitors
ATC
10 μF, 50 V Chip Capacitors
2.2 μF, 100 V Chip Capacitors
22 μF, 25 V Chip Capacitor
1 μF, 100 V Chip Capacitor
470 μF, 63 V Electrolytic Capacitors
56 Ω, 1/4 W Chip Resistors
0 Ω, 3 A Chip Resistors
Murata
ATC
C8, C11, C13, C16
C9
TPSD226M025R0200
GRM31CR72A105KA01L
MCGPR63V477M13X26--RH
CRCW120656R0FKEA
CRCW12060000Z0EA
AVX
C12
Murata
Multicomp
Vishay
Vishay
C14, C15
R1, R2
R3, R4
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C14
C12
R3
C15
C13
C8
C7
C5
C9
C3
MRF6V12500H Rev. 1
R1
C2
C1
R2
C11 C10
C6
C4
R4
C16
Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
10000
1000
160
C
140
120
100
80
iss
P
= 475 W
out
C
oss
100
10
1
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
P
= 525 W
out
V
GS
P
= 500 W
out
60
40
V
= 50 Vdc, I = 200 mA
DQ
DD
20
0
C
rss
f = 1030 MHz, Pulse Width = 128 μsec
0.1
0
5
10
15
20
25
0
10
V
20
30
40
50
DUTY CYCLE (%)
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
Figure 4. Safe Operating Area
Figure 3. Capacitance versus Drain--Source Voltage
22
80
70
62
61
60
59
58
57
56
55
54
53
52
51
50
49
P3dB = 57.6 dBm (575 W)
21
20
19
18
Ideal
G
ps
P1dB = 57.1 dBm (511 W)
60
50
40
Actual
η
D
17
16
30
20
10
0
V
= 50 Vdc, I = 200 mA, f = 1030 MHz
DQ
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
V
= 50 Vdc, I = 200 mA, f = 1030 MHz
DQ
DD
15
14
Pulse Width = 128 μsec, Duty Cycle = 10%
30
100
1000
30
32
34
36
38
40
42
P
, OUTPUT POWER (WATTS) PEAK
P , INPUT POWER (dBm) PEAK
in
out
Figure 5. Power Gain and Drain Efficiency
versus Output Power
Figure 6. Output Power versus Input Power
22
21
20
19
18
17
22
21
20
19
18
17
I
= 800 mA
DQ
50 V
600 mA
I
= 200 mA, f = 1030 MHz
DQ
400 mA
Pulse Width = 128 μsec
45 V
16
15
14
Duty Cycle = 10%
200 mA
40 V
35 V
V
= 30 V
DD
V
= 50 Vdc, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
13
12
30
100
1000
30
100
1000
P
, OUTPUT POWER (WATTS) PEAK
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 8. Power Gain versus Output Power
Figure 7. Power Gain versus Output Power
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
700
22
80
70
G
ps
T
= --30_C
C
21
20
19
18
17
16
15
14
600
500
T
= --30_C
55_C
C
85_C
60
50
40
30
20
10
0
25_C
25_C
85_C
55_C
400
300
200
η
D
V
= 50 Vdc, I = 200 mA, f = 1030 MHz
DQ
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
100
0
V
= 50 Vdc, I = 200 mA, f = 1030 MHz
DQ
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
0
2
4
6
8
10
12
30
100
, OUTPUT POWER (WATTS) PEAK
1000
P , INPUT POWER (dBm) PEAK
P
in
out
Figure 9. Output Power versus Input Power
Figure 10. Power Gain and Drain Efficiency versus
Output Power
9
10
V
P
= 50 Vdc
= 500 W Peak
DD
out
8
Pulse Width = 128 μsec
Duty Cycle = 10%
10
η
D
= 62%
7
10
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
V
= 50 Vdc, I = 200 mA, P = 500 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1030
1.36 -- j1.27
2.50 -- j0.17
Z
=
Test circuit impedance as measured from
gate to ground.
source
Z
load
=
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
load
source
Figure 12. Series Equivalent Source and Load Impedance
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
6
C11
C9
C17
C5
C15
C13
C7
C18
R1
C3
C1
C8
C2
MRF6V12500
Rev. 1
C4
R2
C14
C16
C10
C6
C12
Figure 13. MRF6V12500H(HS) Test Circuit Component Layout — 960--1215 MHz
Table 6. MRF6V12500H(HS) Test Circuit Component Designations and Values — 960--1215 MHz
Part
Description
Part Number
ATC100B2R2JT500XT
ATC100B0R2BT500XT
ATC100B330JT500XT
G2225X7R225KT3AB
T491X226K035AT
Manufacturer
C1
2.2 pF Chip Capacitor
ATC
ATC
ATC
ATC
C2
0.2 pF Chip Capacitor
C3, C4
33 pF Chip Capacitors
C5, C6, C11, C12
C7
2.2 μF, 100 V Chip Capacitors
22 μF, 35 V Tantalum Capacitor
8.2 pF Chip Capacitor
Kemet
ATC
C8
ATC100B8R2CT500XT
ATC100B390JT500XT
C1825C223K1GAC
C1812F104K1RAC
C9, C10
C13, C14
C15, C16
C17, C18
R1, R2
39 pF Chip Capacitors
ATC
0.022 μF, 100 V Chip Capacitors
0.10 μF, 100 V Chip Capacitors
470 μF, 63 V Electrolytic Capacitors
22 Ω, 1/4 W Chip Resistors
Kemet
Kemet
Multicomp
Vishay
Arlon
MCGPR63V477M13X26--RH
CRCW120622R0FKEA
AD255A
PCB
0.030″, ε = 2.55
r
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS — 960--1215 MHz
20
19
18
17
16
15
66
G
ps
64
62
60
58
η
D
56
0
14
13
12
11
IRL
-- 5
-- 1 0
V
= 50 Vdc, P = 500 W Peak (50 W Avg.), I = 200 mA
out DQ
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
-- 1 5
-- 2 0
1300
10
900
950
1000 1050 1100 1150 1200 1250
f, FREQUENCY (MHz)
Figure 14. Power Gain, Drain Efficiency and IRL
versus Frequency
22
21
20
19
18
17
65
60
55
50
45
40
V
I
= 50 Vdc
= 200 mA
DD
1215 MHz
1150 MHz
DQ
Pulse Width = 128 μsec
Duty Cycle = 10%
η
D
960 MHz
1030 MHz
1150 MHz
960 MHz
G
ps
1030 MHz
450
1215 MHz
550 600
200
250
300
350
400
500
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 15. Power Gain and Drain Efficiency versus
Output Power
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
8
Z = 5 Ω
o
f = 1215 MHz
f = 1215 MHz
Z
source
Z
load
f = 960 MHz
f = 960 MHz
V
= 50 Vdc, I = 200 mA, P = 500 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
960
2.25 -- j1.78
2.51 -- j1.02
2.69 -- j0.73
2.71 -- j0.65
2.48 -- j0.76
1.38 -- j1.53
1.48 -- j1.11
1.51 -- j0.78
1.53 -- j0.49
1.53 -- j0.33
1030
1090
1150
1215
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Z
load
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
load
source
Figure 16. Series Equivalent Source and Load Impedance — 960--1215 MHz
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
10
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
11
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
12
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF6V12500H and MRF6V12500HS parts will be available for 2 years after release of
MRF6V12500H and MRF6V12500HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF6V12500H and MRF6V12500HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Sept. 2009
Apr. 2010
•
•
Initial Release of Data Sheet
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
•
Added RF High Power Model availability to Product Software, p. 9
2
3
Sept. 2010
June 2012
•
•
Maximum Ratings table: corrected V
from --0.5, +100 to --0.5, +110 Vdc, p. 2
DSS
Added 960--1215 MHz Broadband application as follows:
-- Typical Performance, p. 1, 2
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8
-- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9
-- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9
-- Fig. 16, Series Equivalent Source and Load Impedance, p. 10
•
Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
•
•
•
•
Modified figure titles and/or graph axes labels to clarify application use, p. 5, 6, 9
Fig. 6, Output Power versus Input Power: corrected P , Output Power unit of measure to watts, p. 5
out
Fig. 9, Output Power versus Input Power: corrected P , Output Power unit of measure to watts, p. 6
out
Fig. 11, MTTF versus Junction Temperature: MTTF end temperature on graph changed to match maximum
operating junction temperature, p. 6
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
14
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E 2009--2010, 2012 Freescale Semiconductor, Inc.
Document Number: MRF6V12500H
Rev. 3,6/2012
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