MRF8S18260HR6 [FREESCALE]

RF Power Field Effect Transistors; 射频功率场效应晶体管

MRF8S18260HR6


型号：	MRF8S18260HR6
厂家：	FREESCALE SEMICONDUCTOR, INC
描述：	RF Power Field Effect Transistors 射频功率场效应晶体管晶体晶体管功率场效应晶体管射频
文件：	总14页 (文件大小：505K)
下载：	下载PDF数据表文档文件

MRF8S18260HSR6

RF Power Field Effect Transistors

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

42 FREESCALE

MRF8S19140HR3

L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465-06, NI-780, 2 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

0 PHILIPS

MRF8S19140HSR3

Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

0 PHILIPS

MRF8S19140HSR3

L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465A-06, NI-780, 2 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

0 ROCHESTER

MRF8S19260H

RF Power Field Effect Transistors

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

32 FREESCALE

MRF8S19260HSR6

2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 375J-02, NI-1230S-8, 8 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

0 PHILIPS

MRF8S21100HR3

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

27 FREESCALE

MRF8S21100HSR3

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

36 FREESCALE

MRF8S21120HSR3

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

0 PHILIPS

MRF8S21140HR3

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

0 PHILIPS

MRF8S21140HSR3

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

0 PHILIPS

MRF8S21172HR3

MRF8S21172HR3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

42 FREESCALE

MRF8S21172HR3

RF Power Field Effect Transistors

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

16 FREESCALE

MRF8S21172HR3_12

RF Power Field Effect Transistors

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

3 FREESCALE

MRF8S21172HSR3

RF Power Field Effect Transistors

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-

5 FREESCALE

©2020 ICPDF网联系我们和版权申明